IRF-33.9UH+-5%EBE2 [VISHAY]

General Purpose Inductor, 3.9uH, 5%, Ferrite-Core,;
IRF-33.9UH+-5%EBE2
元器件型号: IRF-33.9UH+-5%EBE2
生产厂家: VISHAY TELEFUNKEN    VISHAY TELEFUNKEN
描述和应用:

General Purpose Inductor, 3.9uH, 5%, Ferrite-Core,

电感器
PDF文件: 总4页 (文件大小:68K)
下载文档:  下载PDF数据表文档文件
型号参数:IRF-33.9UH+-5%EBE2参数

IRF-33.9UH+-5%ESE2

General Purpose Inductor, 3.9uH, 5%, Ferrite-Core,

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0 VISHAY

IRF330

N-CHANNEL POWER MOSFETS

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161 SAMSUNG

IRF330

5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET

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49 INTERSIL

IRF330

TRANSISTORS N-CHANNEL(Vdss=400V, Rds(on)=1.00ohm, Id=5.5A)

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69 IRF

IRF330

N-Channel Power MOSFETs, 5.5A, 350 V/400V

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59 FAIRCHILD

IRF330

N-CHANNEL POWER MOSFET

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72 SEME-LAB

IRF330

Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204

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4 VISHAY

IRF330-333

N-Channel Power MOSFETs, 5.5A, 350 V/400V

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51 FAIRCHILD

IRF3305

AUTOMOTIVE MOSFET

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144 IRF

IRF3305PBF

HEXFET㈢ Power MOSFET

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62 IRF

IRF330R

TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 5.5A I(D) | TO-204AA

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62 ETC

IRF331

N-Channel Power MOSFETs, 5.5A, 350 V/400V

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55 FAIRCHILD

IRF331

N-CHANNEL POWER MOSFETS

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46 SAMSUNG

IRF331

Power Field-Effect Transistor, 5.5A I(D), 350V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204

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2 VISHAY

IRF3315

Power MOSFET(Vdss=150V, Rds(on)=0.07ohm, Id=27A)

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260 IRF