IRF634PBF [VISHAY]

Power MOSFET; 功率MOSFET

IRF634PBF


型号：	IRF634PBF
厂家：	VISHAY TELEFUNKEN
描述：	Power MOSFET 功率MOSFET 晶体晶体管功率场效应晶体管开关脉冲局域网
文件：	总8页 (文件大小：1542K)
下载：	下载PDF数据表文档文件

IRF634S

Power MOSFET(Vdss=250V, Rds(on)=0.45ohm, Id=8.1A)

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20 IRF

IRF634S

Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, SMD-220, 3 PIN

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0 VISHAY

IRF634SPBF

Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, SMD-220, D2PAK-3

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0 VISHAY

IRF634SPBF

Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, SMD-220, D2PAK-3

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0 IRF

IRF634SR

Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3

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0 FAIRCHILD

IRF634STRL

Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, SMD-220, 3 PIN

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0 VISHAY

IRF634STRLPBF

Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3

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0 IRF

IRF634STRLPBF

Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3

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0 VISHAY

IRF634STRR

暂无描述

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0 IRF

IRF634STRRPBF

Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3

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0 VISHAY

IRF634STRRPBF

Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3

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0 IRF

IRF635

TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 6.5A I(D) | TO-220AB

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66 ETC

IRF635

Power Field-Effect Transistor, 6.8A I(D), 250V, 0.68ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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0 IRF

IRF635-004PBF

Power Field-Effect Transistor, 6.8A I(D), 250V, 0.68ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IRF

IRF635-005PBF

Power Field-Effect Transistor, 6.8A I(D), 250V, 0.68ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IRF

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