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IRF9640SPBF [VISHAY]

Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN;

IRF9640SPBF


元器件型号：	IRF9640SPBF
生产厂家：	VISHAY TELEFUNKEN
描述和应用：	Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN PC 开关晶体管
PDF文件：	总10页 (文件大小：200K)
下载文档：	下载PDF数据表文档文件
型号参数：IRF9640SPBF参数

IRF9640STRL

Power MOSFET

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38 VISHAY

IRF9640STRR

Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

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1 VISHAY

IRF9641

P-CHANNEL POWER MOSFETS

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6 SAMSUNG

IRF9641

P-CHANNEL POWER MOSFETS

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57 SAMSUNG

IRF9641

TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 11A I(D) | TO-220AB

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57 ETC

IRF9641

Power Field-Effect Transistor, 11A I(D), 150V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 SAMSUNG

IRF9642

TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 9A I(D) | TO-220AB

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99 ETC

IRF9642

P-CHANNEL POWER MOSFETS

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40 SAMSUNG

IRF9642

P-CHANNEL POWER MOSFETS

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22 SAMSUNG

IRF9642

Power Field-Effect Transistor, 9A I(D), 200V, 0.7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 SAMSUNG

IRF9643

P-CHANNEL POWER MOSFETS

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27 SAMSUNG

IRF9643

P-CHANNEL POWER MOSFETS

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26 SAMSUNG

IRF9643

TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 9A I(D) | TO-220AB

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67 ETC

IRF9910

Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box

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154 IRF

IRF9910PBF

HEXFET㈢Power MOSFET

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59 IRF

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