IRFBG20STRR [VISHAY]

Power Field-Effect Transistor, 1.4A I(D), 1000V, 11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,;
IRFBG20STRR
型号: IRFBG20STRR
厂家: VISHAY TELEFUNKEN    VISHAY TELEFUNKEN
描述:

Power Field-Effect Transistor, 1.4A I(D), 1000V, 11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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文件: 总6页 (文件大小:169K)
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IRFBG20STRRPBF

Power Field-Effect Transistor, 1.4A I(D), 1000V, 11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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0 VISHAY

IRFBG22

TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 1.2A I(D) | TO-220AB

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29 ETC

IRFBG22-011

Power Field-Effect Transistor, 1.2A I(D), 1000V, 13.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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0 INFINEON

IRFBG30

Power MOSFET(Vdss=1000V, Rds(on)=5.0ohm, Id=3.1A)

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715 IRF

IRFBG30

Power MOSFET

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279 VISHAY

IRFBG30

Power MOSFET

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69 KERSEMI

IRFBG30

Power Field-Effect Transistor, 3.1A I(D), 1000V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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14 IRF

IRFBG30-001PBF

Power Field-Effect Transistor, 2.3A I(D), 1000V, 5.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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0 INFINEON

IRFBG30PBF

Power MOSFET

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187 VISHAY

IRFBG32

TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 2.1A I(D) | TO-220AB

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86 ETC

IRFBG32

Power Field-Effect Transistor, 2.1A I(D), 1000V, 6.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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0 IRF

IRFBG32-004PBF

Power Field-Effect Transistor, 2.1A I(D), 1000V, 6.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 INFINEON

IRFBG32-005PBF

Power Field-Effect Transistor, 2.1A I(D), 1000V, 6.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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1 INFINEON

IRFBL10N60A

TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 11A I(D) | TO-263VAR

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64 ETC

IRFBL10N60A

HEXFET Power MOSFET

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20 IRF