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IRFF312 [VISHAY]

Power Field-Effect Transistor, 1.15A I(D), 400V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205;
IRFF312
型号: IRFF312
厂家: VISHAY    VISHAY
描述:

Power Field-Effect Transistor, 1.15A I(D), 400V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205

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相关型号:

IRFF312R

TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,1.15A I(D),TO-205AF

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FAIRCHILD

IRFF313

1.15A, 350V, 5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF

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ROCHESTER

IRFF313

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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VISHAY

IRFF313

Power Field-Effect Transistor, 1.15A I(D), 350V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF

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FAIRCHILD

IRFF313R

TRANSISTOR,MOSFET,N-CHANNEL,350V V(BR)DSS,1.15A I(D),TO-205AF

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FAIRCHILD

IRFF320

2.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET

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INTERSIL

IRFF320

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS

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INFINEON

IRFF320PBF

Power Field-Effect Transistor, 2A I(D), 400V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN

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INFINEON

IRFF320R

TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 2.5A I(D) | TO-205AF

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ETC

IRFF321

TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 2.5A I(D) | TO-205AF

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ETC

IRFF321R

TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 2.5A I(D) | TO-205AF

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ETC

IRFF322

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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VISHAY

IRFF322R

TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 2A I(D) | TO-205AF

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ETC

IRFF323

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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VISHAY

IRFF323R

TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 2A I(D) | TO-205AF

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ETC

IRFF330

3.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET

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INTERSIL

IRFF330

N-Channel MOSFET in a Hermetically sealed TO39

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SEME-LAB

IRFF330

3.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF

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RENESAS

IRFF330R

TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 3.5A I(D) | TO-205AF

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ETC

IRFF331

Power Field-Effect Transistor, 3.5A I(D), 350V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF

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INFINEON