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元器件品牌
IRFS11N50A
[VISHAY]
Power MOSFET; 功率MOSFET
元器件型号：
IRFS11N50A
生产厂家：
VISHAY TELEFUNKEN
描述和应用：
Power MOSFET
功率MOSFET
晶体 晶体管 开关 脉冲 局域网
PDF文件：
总8页 (文件大小：990K)
下载文档：
下载PDF数据表文档文件
型号参数：IRFS11N50A参数
查看货源
IRFS11N50APBF
Power MOSFET
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VISHAY
IRFS11N50APBF
HEXFET㈢ Power MOSFET
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IRF
IRFS11N50APBF
Power Field-Effect Transistor, 11A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3
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0
VISHAY
IRFS11N50ATRL
Power MOSFET
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VISHAY
IRFS11N50ATRL
TRANSISTOR | MOSFET | N-CHANNEL | 11A I(D) | TO-263AB
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ETC
IRFS11N50ATRLP
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
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VISHAY
IRFS11N50ATRLPBF
Power MOSFET
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18
VISHAY
IRFS11N50ATRR
TRANSISTOR | MOSFET | N-CHANNEL | 11A I(D) | TO-263AB
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ETC
IRFS11N50ATRRP
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
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0
VISHAY
IRFS11N50ATRRPBF
Power MOSFET
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21
VISHAY
IRFS130
Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN
Warning
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0
SAMSUNG
IRFS131
Power Field-Effect Transistor, 9.7A I(D), 80V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN
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0
SAMSUNG
IRFS132
Power Field-Effect Transistor, 8.3A I(D), 100V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN
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0
SAMSUNG
IRFS133
Power Field-Effect Transistor, 8.3A I(D), 80V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN
Warning
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0
SAMSUNG
IRFS140
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 19.4A I(D) | SOT-186VAR
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ETC
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