IRKL430-20 [VISHAY]
Silicon Controlled Rectifier, 430000mA I(T), 2000V V(RRM);
| 型号： | IRKL430-20 |
| 厂家： | 
VISHAY |
| 描述： | Silicon Controlled Rectifier, 430000mA I(T), 2000V V(RRM) 局域网 栅 栅极 |
| 文件： | 总9页 (文件大小：120K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I27400 rev. A 09/97
IRK.430.. SERIES
SUPER MAGN-A-pakTM Power Modules
THYRISTOR / DIODE and
THYRISTOR / THYRISTOR
Features
430 A
High current capability
3000 VRMS isolating voltage with non-toxic substrate
High surge capability
High voltage ratings up to 2000V
Industrial standard package
UL recognition pending
Typical Applications
Motor starters
DC motor controls - AC motor controls
Uninterruptable power supplies
Wind mill
Major Ratings and Characteristics
Parameters
IT(AV) or IF(AV)
IRK.430..
430
Units
A
@ TC
82
°C
IT(RMS)
675
82
A
@ TC
°C
KA
KA
ITSMor IFSM @50Hz
15.7
16.4
1232
1125
@60Hz
2
2
I t
@50Hz
@60Hz
KA s
2
KA s
2
2
I √t
12320
KA √s
VDRM/VRRM range
1600 to 2000
V
TSTG
TJ
range
range
-40to150
-40to130
°C
°C
Document Number: 93748
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1
IRK.430.. Series
Bulletin I27400 rev. A 09/97
ELECTRICALSPECIFICATIONS
Voltage Ratings
Voltage
Code
VRRM/VDRM, maximum repetitive
VRSM , maximum non-
IRRM/IDRM max.
@ TJ = TJ max.
mA
Type number
IRK.430..
peak reverse voltage
repetitive peak rev. voltage
V
V
16
18
20
1600
1800
2000
1700
1900
2100
100
On-state Conduction
Parameter
IRK.430..
Units Conditions
IT(AV)
Maximum average on-state current
430
82
A
180° conduction, half sine wave
IF(AV)
@ Case temperature
°C
IT(RMS) Maximum RMS on-state current
675
A
180° conduction, half sine wave @ TC = 82°C
ITSM
IFSM
Maximum peak, one-cycle,
non-repetitive surge current
15.7
16.4
13.2
13.8
1232
1125
871
KA
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
Sinusoidal half wave,
I2t
Maximum I2t for fusing
KA2s t = 10ms No voltage Initial TJ = TJ max.
t = 8.3ms reapplied
t = 10ms 100% VRRM
795
t = 8.3ms reapplied
I2√t
Maximum I2√t for fusing
12320
KA2√s t = 0.1 to 10ms, no voltage reapplied
VT(TO)1 Low level value of threshold voltage
VT(TO)2 High level value of threshold voltage
0.96
V
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
(I > π x IT(AV)), TJ = TJ max.
1.06
0.51
r
Low level value of on-state slope resistance
High level value of on-state slope resistance
mΩ (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
(I > π x IT(AV)), TJ = TJ max.
t1
r
t2
0.45
1.65
VTM
VFM
Maximum on-state or forward
voltage drop
V
Ipk = 1500A, TJ = 25°C, tp = 10ms sine pulse
IH
IL
Maximum holding current
Typical latching current
500
mA TJ = 25°C, anode supply 12V resistive load
1000
Switching
Parameter
IRK.430..
1000
Units Conditions
di/dt
Maximum rate of rise of turned-on
current
A/µs TJ = TJ max., ITM = 400A, VDRM applied
t
Typical delay time
2.0
µs
µs
Gate current 1A, di /dt = 1A/µs
g
d
V
= 0.67% VDRM , TJ = 25°C
d
t
Typical turn-off time
200
ITM = 750A, TJ = TJ max, di/dt = -60A/µs,
q
VR = 50V, dv/dt = 20V/µs, Gate 0 V 100Ω
Document Number: 93748
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2
IRK.430.. Series
Bulletin I27400 rev. A 09/97
Blocking
Parameter
IRK.430..
1000
Units Conditions
V/µs TJ = 130°C., linear to VD = 80% VDRM
dv/dt
Maximum critical rate of rise of off-state
voltage
VINS
IRRM
IDRM
RMS isolation voltage
3000
100
V
t = 1 s
Maximum peak reverse and off-state
leakage current
mA TJ = TJ max., rated VDRM/VRRM applied
Triggering
Parameter
Maximum peak gate power
IRK.430..
Units Conditions
PGM
10
2.0
3.0
20
W
W
A
T = T max., t < 5ms
p
J J
PG(AV) Maximum peak average gate power
+ IGM Maximum peak positive gate current
+ VGM Maximum peak positive gate voltage
TJ = TJ max., f = 50Hz, d% = 50
T = T max., t < 5ms
p
J
J
V
- VGM Maximum peak negative gate voltage
5.0
V
IGT
Max. DC gate current required to trigger
DC gate voltage required to trigger
DC gate current not to trigger
200
mA TJ = 25°C Vak 12V
TJ = 25°C Vak 12V
VGT
IGD
3.0
10
V
mA TJ = TJ max.
V
VGD
DC gate voltage not to trigger
0.25
Thermal and Mechanical Specifications
Parameter
IRK.430..
- 40 to 130
-40to150
0.065
Units Conditions
°C
TJ
T
Max. junctionoperatingtemperaturerange
Max. storage temperature range
stg
RthJC Max. thermal resistance, junction to
K/W Per junction, DC operation
K/W
case
RthC-hs Max. thermal resistance, case to
heatsink
0.02
A mounting compound is recommended and the
Nm
T
Mountingtorque ± 10%SMAP to heatsink
busbartoSMAP
6-8
12-15
1500
torque should be rechecked after a period of 3 hours
to allow for the spread of the compound
wt
Approximate weight
g
Case style
SUPER MAGN-A-pak See outline table
Document Number: 93748
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3
IRK.430.. Series
Bulletin I27400 rev. A 09/97
∆RthJC Conduction
(The following table shows the increment of thermal resistance R
when devices operate at different conduction angles than DC)
thJC
Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions
180°
120°
90°
0.009
0.011
0.014
0.021
0.037
0.006
0.011
0.015
0.022
0.038
K/W
TJ = TJ max.
60°
30°
Ordering Information Table
DeviceCode
IRK
T
430
-
20
1
2
3
4
1
2
3
4
-
-
-
-
Module type
Circuit configuration (See Circuit Configurations Table)
Current rating
Voltage code: Code x 100 = VRRM (See Voltage Ratings Table)
Circuit Configurations Table
IRKT
IRKH
IRKL
1
~
1
~
1
~
+
2
+
2
+
2
-
-
3
3
3
-
7(K2)
4(K1) 7(K2)
4(K1)
6(G2)
5(G1)
6(G2)
5(G1)
NOTE: To order the Optional Hardware see Bulletin I27900
Document Number: 93748
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4
IRK.430.. Series
Bulletin I27400 rev. A 09/97
Outline Table
All dimensions in millimeters (inches)
130
130
120
110
100
90
IRK.430.. Se rie s
IRK.430.. Se rie s
R
(DC) = 0.065 K/W
R
(DC ) = 0.065 K/W
th JC
thJC
120
110
100
Co nd uc tio n Ang le
Conduc tio n Pe rio d
90
80
70
60°
30°
30°
90°
60°
90°
120°
80
120°
180°
180°
DC
70
0
100
200
300
400
500
0
100 200 300 400 500 600 700
Ave ra g e O n-sta te C urre nt (A)
Ave ra g e O n-sta te C urre nt (A)
Fig. 2 - Current Ratings Characteristics
Fig. 1 - Current Ratings Characteristics
Document Number: 93748
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5
IRK.430.. Series
Bulletin I27400 rev. A 09/97
1000
900
800
700
600
500
400
300
200
100
0
700
DC
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
600
500
400
300
200
100
0
RMS Lim it
RMS Limit
C onduc tio n Ang le
Co nd uctio n Perio d
IRK.430.. Se rie s
Pe r Junc tion
IRK.430.. Se rie s
Pe r Junc tion
T = 130°C
T
= 130°C
J
J
0
100
200
300
400
500
0
100 200 300 400 500 600 700
Ave ra g e O n-sta te C urre nt (A)
Ave ra g e O n-sta te Curre n t (A)
Fig. 3 - On-state Power Loss Characteristics
Fig. 4 - On-state Power Loss Characteristics
15000
14000
13000
12000
11000
10000
9000
16000
15000
14000
13000
12000
11000
10000
9000
At Any Ra te d Lo a d C ond itio n And With
Ma ximu m No n Re p etitive Surg e C u rre nt
Ve rsus Pulse Tra in Dura tion. Control
Of C o nd uc tio n Ma y No t Be Ma inta ine d .
Ra te d V
Ap p lie d Following Surge .
RRM
In itia l T = 130°C
J
In itia l T = 130°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
No Volta g e Re a p p lie d
Ra te d V
Re a p p lie d
RRM
8000
8000
IRK.430.. Se rie s
Pe r Junc tion
IRK.430.. Se rie s
Pe r Junc tion
7000
7000
6000
6000
0.01
0.1
1
1
10
100
Num be r O f Equa l Am plitud e Ha lf Cyc le C urrent Pulse s (N)
Pulse Tra in Dura tio n (s)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
800
0
0
t
180°
120°
90°
60°
.
h
.
1
0
2
S
A
9
700
K
/
K
/
W
0
.
W
.
1
6
600
K
/
W
0
30°
2
C ond uctio n Angle
K
/
500
400
300
200
W
0
.
3
K
/
W
IRK.430.. Se rie s
Pe r Mo dule
= 130°C
100
0
T
J
0
100 200 300 400 500 600 700
20
40
60
80
100
120
Ma ximum Allo wa b le Am bie nt Te mp e ra ture (°C)
To ta l RMS O utp ut Curre nt (A)
Fig. 7 - On-state Power Loss Characteristics
Document Number: 93748
www.vishay.com
6
IRK.430.. Series
Bulletin I27400 rev. A 09/97
3000
2500
2000
1500
1000
500
180°
(Sin e )
180°
1
.
5
K
/
W
2
(Re c t)
K
/
W
3
K
/
W
5
K
/
W
1
0
K
/
W
W
2 x IRK.430.. Se rie s
Single Pha se Brid ge
C onne c te d
1
5
K
/
T
= 130°C
J
0
0
100 200 300 400 500 600 700 800 90
0
20
40
60
80
100
120
To ta l Outp ut C urre n t (A)
Ma ximum Allo wa b le Amb ie nt Te mp e ra ture (°C )
Fig. 8 - On-state Power Loss Characteristics
5000
4500
4000
3500
3000
2500
2000
1500
1000
500
t
h
S
A
120°
(Re c t)
0
.
0
5
K
/
W
3 x IRK.430.. Se rie s
Thre e Pha se Brid ge
Co nne cte d
0
.2
K
/
W
T
= 130°C
J
0
0
200 400 600 800 1000 1200 14
00
20
40
60
80
100
120
To ta lO utp ut C urre n t (A)
Ma ximum Allo wa b le Am b ie nt Te mp e ra ture (°C)
Fig. 9 - On-state Power Loss Characteristics
0.1
10000
1000
100
IRK.430.. Se rie s
Pe r Junc tion
T = 25°C
J
T = 130°C
J
0.01
Ste a dy Sta te Va lue :
= 0.065 K/W
IRK.430.. Se rie s
Pe r Junc tio n
R
thJC
(DC O p e ra tio n)
0.001
0.5
1
1.5
2
2.5
3
3.5
0.001
0.01
0.1
1
10
100
In sta n ta n eo us O n -sta te Vo lta g e (V)
Fig. 10 - On-state Voltage Drop Characteristics
Sq ua re Wa ve Pulse Dura tio n (s)
Fig. 11 - Thermal Impedance ZthJC Characteristics
Document Number: 93748
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7
IRK.430.. Series
Bulletin I27400 rev. A 09/97
100
Re c ta ng ula r g a te p ulse
(1) PGM = 10W, tp = 4m s
(2) PGM = 20W, tp = 2m s
(3) PGM = 40W, tp = 1m s
(4) PGM = 60W, tp = 0.66m s
a ) Re c o m me nd e d lo a d line for
ra te d d i/ d t : 20V, 10o hm s; tr<=1 µs
b ) Re c o m me nd e d lo a d line for
<=30% ra te d d i/ d t : 10V, 10oh ms
tr<=1 µs
10
1
(a )
(b )
(1) (2) (3) (4)
VG D
IGD
IRK.430.. Se rie s
0.1
Fre q ue nc y Lim ite d b y PG(AV)
0.1
0.001
0.01
1
10
100
Insta nta ne o us Ga te C urre nt (A)
Fig. 12 - Gate Characteristics
Document Number: 93748
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8
Legal Disclaimer Notice
Vishay
Notice
The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
International Rectifier®, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN®
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.
Document Number: 99901
Revision: 12-Mar-07
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1
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