IRLD014PBF [VISHAY]
Power MOSFET; 功率MOSFET
| 型号： | IRLD014PBF |
| 厂家： | 
VISHAY |
| 描述： | Power MOSFET |
| 文件： | 总8页 (文件大小：1729K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRLD014, SiHLD014
Vishay Siliconix
Power MOSFET
FEATURES
• Dynamic dV/dt Rating
PRODUCT SUMMARY
VDS (V)
60
Available
• For Automatic Insertion
R
DS(on) ()
VGS = 5 V
0.20
RoHS*
• End Stackable
Qg (Max.) (nC)
8.4
2.6
COMPLIANT
• Logic-Level Gate Drive
Q
Q
gs (nC)
gd (nC)
6.4
• RDS(on) Specified at VGS = 4 V and 5 V
• 175 °C Operating Temperature
• Fast Switching
Configuration
Single
D
HVMDIP
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertiable
case style which can be stacked in multiple combinations on
standard 0.1" pin centers. The dual drain servers as a
thermal link to the mounting surface for power dissipation
levels up to 1 W.
G
S
G
D
S
N-Channel MOSFET
ORDERING INFORMATION
Package
HVMDIP
IRLD014PbF
SiHLD014-E3
IRLD014
Lead (Pb)-free
SnPb
SiHLD014
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
60
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
V
VGS
10
TA = 25 °C
TA = 100 °C
1.7
Continuous Drain Current
VGS at 5.0 V
ID
1.2
14
A
Pulsed Drain Currenta
IDM
Linear Derating Factor
0.0083
490
W/°C
mJ
Single Pulse Avalanche Energyb
Maximum Power Dissipation
EAS
PD
T
A = 25 °C
1.3
W
Peak Diode Recovery dV/dtc
dV/dt
TJ, Tstg
4.5
V/ns
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
- 55 to + 175
300d
°C
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 197 mH, Rg = 25 , IAS = 1.7 A (see fig. 12).
c. ISD 10 A, dI/dt 90 A/µs, VDD VDS, TJ 175 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91307
S10-2465-Rev. D, 08-Nov-10
www.vishay.com
1
IRLD014, SiHLD014
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
UNIT
Maximum Junction-to-Ambient
RthJA
-
120
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS
VDS/TJ
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
60
-
-
V
V/°C
V
V
DS Temperature Coefficient
-
0.070
-
Gate-Source Threshold Voltage
Gate-Source Leakage
1.0
-
-
-
-
-
-
-
2.0
100
25
VGS
VDS = 60 V, VGS = 0 V
DS = 48 V, VGS = 0 V, TJ = 150 °C
=
10 V
-
nA
-
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
IDSS
µA
V
-
-
250
0.20
0.28
-
VGS = 5.0 V
VGS = 4.0 V
ID = 1.0 Ab
RDS(on)
gfs
ID = 0.85 Ab
-
Forward Transconductance
Dynamic
VDS = 25 V, ID = 1.0 Ab
1.9
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Ciss
Coss
Crss
Qg
-
-
-
-
-
-
-
-
-
-
400
170
42
-
-
VGS = 0 V
DS = 25 V
f = 1.0 MHz, see fig. 5
V
-
pF
nC
-
8.4
2.6
6.4
-
ID = 10 A, VDS = 48 V
see fig. 6 and 13b
Qgs
Qgd
td(on)
tr
V
GS = 5.0 V
-
-
9.3
110
17
26
-
V
DD = 30 V, ID = 10 A
ns
Turn-Off Delay Time
Fall Time
td(off)
tf
Rg = 12 , RD = 2.8 , see fig. 10b
-
-
D
Between lead,
Internal Drain Inductance
LD
LS
-
-
4.0
6.0
-
-
6 mm (0.25") from
package and center of
die contact
nH
G
Internal Source Inductance
S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
D
MOSFET symbol
showing the
integral reverse
p - n junction diode
IS
-
-
-
-
1.7
14
A
G
Pulsed Diode Forward Currenta
ISM
S
Body Diode Voltage
VSD
trr
TJ = 25 °C, IS = 1.7 A, VGS = 0 Vb
-
-
-
-
1.6
130
0.65
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
93
ns
µC
TJ = 25 °C, IF = 10 A, dI/dt = 100 A/µsb
Qrr
ton
0.34
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 µs; duty cycle 2 %.
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Document Number: 91307
S10-2465-Rev. D, 08-Nov-10
IRLD014, SiHLD014
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20 µs PULSE WIDTH
T
= 25 °C
A
Fig. 1 - Typical Output Characteristics, TA = 25 °C
Fig. 3 - Typical Transfer Characteristics
20 µs PULSE WIDTH
T
A
= 175 °C
Fig. 2 - Typical Output Characteristics, TA = 175 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91307
S10-2465-Rev. D, 08-Nov-10
www.vishay.com
3
IRLD014, SiHLD014
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
T
T
= 25 °C
= 175 °C
A
J
SINGLE PULSE
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
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Document Number: 91307
S10-2465-Rev. D, 08-Nov-10
IRLD014, SiHLD014
Vishay Siliconix
RD
VDS
VGS
D.U.T.
Rg
+
V
-
DD
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
T , Ambient Temperature (°C)
A
td(on) tr
td(off) tf
Fig. 9 - Maximum Drain Current vs. Ambient Temperature
Fig. 10b - Switching Time Waveforms
t , Rectangular Pulse Duration (s)
1
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Document Number: 91307
S10-2465-Rev. D, 08-Nov-10
www.vishay.com
5
IRLD014, SiHLD014
Vishay Siliconix
L
VDS
VDS
Vary tp to obtain
required IAS
tp
VDD
D.U.T.
IAS
Rg
+
-
VDD
VDS
10 V
0.01 W
tp
IAS
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
QG
VGS
12 V
0.2 µF
0.3 µF
QGS
QGD
+
-
VDS
D.U.T.
VG
VGS
3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
Fig. 13a - Basic Gate Charge Waveform
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Document Number: 91307
S10-2465-Rev. D, 08-Nov-10
IRLD014, SiHLD014
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
Circuit layout considerations
• Low stray inductance
• Ground plane
D.U.T.
• Low leakage inductance
current transformer
-
+
-
-
+
Rg
• dV/dt controlled by Rg
+
• Driver same type as D.U.T.
• ISD controlled by duty factor “D”
• D.U.T. - device under test
VDD
-
Driver gate drive
P.W.
P.W.
D =
Period
Period
V
GS = 10 Va
D.U.T. lSD waveform
D.U.T. VDS waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
Diode recovery
dV/dt
VDD
Re-applied
voltage
Body diode forward drop
Inductor current
ISD
Ripple ≤ 5 %
Note
a. VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91307.
Document Number: 91307
S10-2465-Rev. D, 08-Nov-10
www.vishay.com
7
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
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Document Number: 91000
Revision: 11-Mar-11
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