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IRLZ24PBF [VISHAY]

Power MOSFET; 功率MOSFET
IRLZ24PBF
型号: IRLZ24PBF
厂家: VISHAY    VISHAY
描述:

Power MOSFET
功率MOSFET

晶体 晶体管 开关 脉冲 局域网
文件: 总8页 (文件大小:1617K)
中文:  中文翻译
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相关型号:

IRLZ24S

HEXFET POWER MOSFET

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INFINEON

IRLZ24S

Power MOSFET

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VISHAY

IRLZ24SPBF

TRANSISTOR 17 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, SMD-220, 3 PIN, FET General Purpose Power

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VISHAY

IRLZ24SPBF

Power Field-Effect Transistor, 17A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, SMD-220, 3 PIN

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IRLZ24STRL

HEXFET POWER MOSFET

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IRLZ24STRR

Power Field-Effect Transistor, 17A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

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IRLZ24_11

Power MOSFET

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VISHAY

IRLZ30

Power Field-Effect Transistor, 25A I(D), 50V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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SAMSUNG

IRLZ34

HEXFET POWER MOSFET

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IRLZ34

N-channel enhancement mode Logic level TrenchMOS transistor

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NXP

IRLZ34

Power MOSFET

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IRLZ34-002

Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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IRLZ34-004PBF

Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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IRLZ34-005PBF

Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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INFINEON

IRLZ34-006PBF

Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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IRLZ34-010PBF

Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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IRLZ34-011

Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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IRLZ34-012

Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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INFINEON

IRLZ34-013

Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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INFINEON

IRLZ34-013PBF

Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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INFINEON