M100A-E3 [VISHAY]
DIODE 1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AL, LEAD FREE, PLASTIC, DO-41, 2 PIN, Signal Diode;![M100A-E3](http://pdffile.icpdf.com/pdf2/p00239/img/icpdf/M100B-E3_1442035_icpdf.jpg)
型号: | M100A-E3 |
厂家: | ![]() |
描述: | DIODE 1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AL, LEAD FREE, PLASTIC, DO-41, 2 PIN, Signal Diode 二极管 |
文件: | 总3页 (文件大小:290K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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M100A thru M100M
Vishay General Semiconductor
General Purpose Plastic Rectifier
Major Ratings and Characteristics
IF(AV)
VRRM
IFSM
IR
1.0 A
50 V to 1000 V
50 A
1.0 µA
VF
1.0 V, 1.1 V
150 °C
DO-204AL (DO-41)
Tj max.
Features
Mechanical Data
• Low forward voltage drop
Case: DO-204AL, molded epoxy body
• Low leakage current
Epoxy meets UL-94V-0 Flammability rating
• High forward surge capability
• Solder Dip 260 °C, 40 seconds
Terminals: Matte tin plated (E3 Suffix) leads, solder-
able per J-STD-002B and JESD22-B102D
Polarity: Color band denotes cathode end
Typical Applications
For use in general purpose rectification of power sup-
plies, inverters, converters and freewheeling diodes
application.
(Note: These devices are not Q101 qualified. There-
fore, the devices specified in this datasheet have not
been designed for use in automotive or Hi-Rel appli-
cations.)
Maximum Ratings
(TA = 25 °C unless otherwise noted)
Parameter
Symbol M100A M100B M100D M100G M100J M100K M100M Unit
Maximum repetitive peak reverse voltage
VRRM
VRMS
VDC
50
35
50
100
70
200
140
200
400
280
400
1.0
600
420
600
800
560
800
1000
700
V
V
V
A
Maximum RMS voltage
Maximum DC blocking voltage
100
1000
Maximum average forward rectified current
0.375" (9.5 mm) lead length at TA = 100 °C
IF(AV)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
IFSM
50
A
Maximum full load reverse current full cycle
average 0.375" (9.5 mm) lead length
at TA = 55 °C
IR(AV)
100
µA
Operating junction and storage temperature
range
TJ,TSTG
- 50 to + 150
°C
Document Number 88659
30-Aug-05
www.vishay.com
1
M100A thru M100M
Vishay General Semiconductor
Electrical Characteristics
(TA = 25 °C unless otherwise noted)
Parameter
Maximum
Test condition
at 1.0 A
Symbol M100A M100B M100D M100G M100J M100K M100M Unit
VF
1.0
1.1
V
instantaneous forward
voltage
Maximum DC reverse
current at rated DC
blocking voltage
T
A = 25 °C
IR
1.0
50
µA
TA = 100 °C
Typical reverse
recovery time
at IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
2.0
15
µs
pF
Typical junction
capacitance
at 4.0 V, 1 MHz
CJ
Thermal Characteristics
(TA = 25 °C unless otherwise noted)
Parameter
Symbol M100A M100B M100D M100G M100J M100K M100M Unit
Typical thermal resistance(1)
RθJA
RθJL
50
25
°C/W
Note: (1) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5 mm) lead length, P.C.B. mounted
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise noted)
1.2
1.0
50
40
30
20
10
0
TA = 75 °C
8.3 ms Single Half Sine-Wave
60 Hz
Resistive or
Inductive Load
0.8
0.6
0.4
0.2
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pads
0.375" (9.5 mm) Lead Length
0
0
25
50
75
100
125
150
1
10
100
Number of Cycles at 60 Hz
Ambient Temperature, °C
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-repetitive Peak Forward Surge Current
www.vishay.com
Document Number 88659
30-Aug-05
2
M100A thru M100M
Vishay General Semiconductor
100
10
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50mVp-p
TJ = 25 °C
1
10
Pulse Width = 300 µs
1% Duty Cycle
0.1
0.01
1
0.1
1
10
100
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Reverse Voltage (V)
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Junction Capacitance
100
10
1000
100
TJ = 150 °C
10
1
1
0.1
TJ = 25 °C
0.1
0.01
0.01
0.1
1
10
100
40
60
80
0
20
100
t - Pulse Duration (sec.)
Percentage of Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics
Figure 6. Typical Transient Thermal Impedance
Package outline dimensions in inches (millimeters)
DO-204AL (DO-41)
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
0.205 (5.2)
0.160 (4.1)
1.0 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
DIA.
Document Number 88659
30-Aug-05
www.vishay.com
3
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