MCT6H [VISHAY]
Dual Channel Optocoupler with Phototransistor; 双通道光电耦合器与光电晶体管
| 型号： | MCT6H |
| 厂家： | 
VISHAY |
| 描述： | Dual Channel Optocoupler with Phototransistor |
| 文件： | 总7页 (文件大小：98K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MCT6H/ MCT62H
Vishay Telefunken
Dual Channel Optocoupler with Phototransistor
Output
Description
The MCT6H and MCT62H consist of a photo-
transistor optically coupled to a gallium arsenide
infrared-emitting diode in a 6-lead plastic dual inline
package.
The elements are mounted on one leadframe using
a coplanar technique, providing a fixed distance
between input and output for highest safety
requirements.
14838
Applications
Galvanically separated circuits, non-interacting
switches
Features
8
1
7
5
4
6
3
Current Transfer Ratio (CTR) of typical 100%
Isolation test voltage V = 5 kV
IO
Low temperature coefficient of CTR
Low coupling capacitance of typical 0.3 pF
Wide ambient temperature range
2
Underwriters Laboratory (UL) 1577 recognized,
file number E-76222
CSA (C–UL) 1577 recognized, file number
E-76222 – Double Protection
Coupling System U
C
Order Instruction
Ordering Code
CTR Ranking
Remarks
MCT6H
> 50%
MCT62H
> 100%
Rev. A1, 11–Jan–99
201
MCT6H/ MCT62H
Vishay Telefunken
Absolute Maximum Ratings
Input (Emitter)
Parameter
Reverse voltage
Forward current
Forward surge current
Power dissipation
Test Conditions
Symbol
Value
6
60
1.5
100
125
Unit
V
mA
A
mW
C
V
R
I
F
t ≤ 10 s
I
p
FSM
T
amb
≤ 25 C
P
V
Junction temperature
T
j
Output (Detector)
Parameter
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
Power dissipation
Test Conditions
Symbol
Value
70
7
Unit
V
V
mA
mA
mW
C
V
V
CEO
ECO
I
C
50
t /T = 0.5, t ≤ 10 ms
I
100
150
125
p
p
CM
T
amb
≤ 25 C
P
V
T
j
Junction temperature
Coupler
Parameter
Test Conditions
Symbol
V
IO
Value
5
250
Unit
kV
mW
C
C
C
1)
AC isolation test voltage (RMS) t = 1 min
Total power dissipation
Ambient temperature range
Storage temperature range
Soldering temperature
T
amb
≤ 25 C
P
tot
T
–40 to +100
–55 to +125
260
amb
T
stg
2 mm from case, t ≤ 10 s
T
sd
1)
Related to standard climate 23/50 DIN 50014
202
Rev. A1, 11–Jan–99
MCT6H/ MCT62H
Vishay Telefunken
Electrical Characteristics (Tamb = 25°C)
Input (Emitter)
Parameter
Forward voltage
Test Conditions
I = 50 mA
Symbol
Min.
Typ.
1.25
Max.
1.6
Unit
V
V
F
F
Output (Detector)
Parameter
Collector emitter voltage I = 1 mA
Emitter collector voltage
Collector dark current
Test Conditions
Symbol
Min.
70
7
Typ.
Max.
100
Unit
V
V
V
V
C
CEO
ECO
CEO
I = 100 A
E
V
CE
= 20 V, I = 0, E = 0
I
nA
F
Coupler
Parameter
DC isolation test voltage t = 2 s
Isolation resistance
Test Conditions
Symbol
Min.
5
Typ.
Max.
0.3
Unit
kV
1)
V
R
IO
IO
1)
12
V
= 1000 V,
40% relative humidity
10
IO
Collector emitter
saturation voltage
I = 10 mA, I = 1 mA
V
CEsat
V
F
C
Cut-off frequency
I = 10 mA, V = 5 V,
f
C
100
0.3
kHz
pF
F
CE
R = 100
L
Coupling capacitance
f = 1 MHz
C
k
1)
Related to standard climate 23/50 DIN 50014
Current Transfer Ratio (CTR)
Parameter
I /I
Test Conditions
= 5 V, I = 5 mA
Type
MCT6H
MCT6H
Symbol
CTR
CTR
Min.
0.5
0.6
1
Typ.
1
1.2
2
Max.
Unit
V
CE
V
CE
V
CE
C F
F
= 5 V, I = 10 mA
F
= 5 V, I = 5 mA
MCT62H
CTR
F
Rev. A1, 11–Jan–99
203
MCT6H/ MCT62H
Vishay Telefunken
Switching Characteristics
Parameter
Delay time
Rise time
Test Conditions
Symbol
Typ.
3.0
3.0
4.7
0.3
6.0
5.0
Unit
V = 5 V, I = 2 mA, R = 100 (see figure 1)
t
d
s
s
s
s
s
s
S
C
L
t
r
Fall time
t
f
Storage time
Turn-on time
Turn-off time
t
s
t
t
on
off
96 11698
I
F
I
+ 5 V
I
F
F
0
0
Adjusted through
input amplitude
I
= 2 mA ;
C
t
t
p
R
= 50
G
I
t
C
p
= 0.01
T
100%
90%
t = 50
s
p
Channel I
Channel II
Oscilloscope
R = 1 M
L
C = 20 pF
50
100
L
10%
0
95 10804
t
Figure 1. Test circuit, non-saturated operation
t
r
t
d
t
s
t
f
t
on
t
off
t
pulse dura-
t
t
t
storage time
fall time
turn-off time
p
s
tion
f
t
t
t
delay time
rise time
turn-on time
(= t + t )
d
off
s
f
r
(= t + t )
on
d
r
Figure 2. Switching times
204
Rev. A1, 11–Jan–99
MCT6H/ MCT62H
Vishay Telefunken
Typical Characteristics (Tamb = 25 C, unless otherwise specified)
300
250
200
150
100
50
10000
1000
100
10
Coupled device
V
I =0
F
=20V
CE
Phototransistor
IR-diode
0
1
0
40
80
120
0
10 20 30 40 50 60 70 80 90 100
96 11700
T
amb
– Ambient Temperature (
96 11928
T
amb
– Ambient Temperature ( °C
°
Figure 3. Total Power Dissipation vs.
Ambient Temperature
Figure 6. Collector Dark Current vs.
Ambient Temperature
1000.0
100.00
10.00
1.00
V
CE
=5V
100.0
10.0
1.0
0.10
0.1
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
0.1
1.0
10.0
100.0
96 11862
V – Forward Voltage ( V )
F
96 11929
I – Forward Current ( mA )
F
Figure 4. Forward Current vs. Forward Voltage
Figure 7. Collector Current vs. Forward Current
1.5
100.0
20mA
I =50mA
F
V
=5V
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
CE
I =5mA
F
10mA
10.0
1.0
5mA
2mA
1mA
0.1
–30 –20 –10 0 10 20 30 40 50 60 70 80
0.1
1.0
10.0
100.0
96 11927
T
– Ambient Temperature ( °C
96 11930
V
– Collector Emitter Voltage ( V
amb
CE
Figure 5. Relative Current Transfer Ratio vs.
Ambient Temperature
Figure 8. Collector Current vs. Collector Emitter Voltage
Rev. A1, 11–Jan–99
205
MCT6H/ MCT62H
Vishay Telefunken
1.0
0.9
10
8
Non saturated opera-
tion
CTR=50%
0.8
V =5V
S
R =100
L
0.7
0.6
6
t
on
20%
0.5
0.4
0.3
0.2
0.1
0
4
t
off
2
10%
0
1
10
– Collector Current ( mA )
100
0
1
2
3
4
5
6
7
8
9
10
96 11993
I
C
96 11995
I – Collector Current ( mA )
C
Figure 9. Collector Emitter Saturation Voltage vs.
Collector Current
Figure 11. Turn on / off Time vs. Collector Current
Type
1000
V
CE
=5V
100
10
1
XXXXXXXX
Date
820 U TFK 63
Code
(YM)
0.1
1.0
10.0
100.0
96 11994
I – Forward Current ( mA )
F
15091
Figure 10. Current Transfer Ratio vs. Forward Current
Coupling
System
Company
Logo
Production
Location
Pin 1
Indication
Indicator
Figure 12. Marking example
206
Rev. A1, 11–Jan–99
MCT6H/ MCT62H
Vishay Telefunken
Dimensions in mm
weight:
ca. 0.55 g
creepage distance: 6 mm
air path: 6 mm
after mounting on PC board
14784
Rev. A1, 11–Jan–99
207
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