KUREN-46PGW

Plug-in Signal Conditioners K-UNIT
暂无信息
0 MSYSTEM

SC1065FCT

Silicon Carbide Schottky Diode
暂无信息
0 JINGHENG

STM32F723VEI7TR

Arm Cortex-M7 32b MCUFPU, 462DMIPS, up to 512KB Flash
暂无信息
0 STMICROELECTR

CTDR5F-390K

Drum Core Inductors - Radial Leaded
暂无信息
1 Central Techn

WJT-1AB-R/Q

Dual Output Plug-in Signal Conditioners W-UNIT
暂无信息
0 MSYSTEM

WJT-11A-D

Dual Output Plug-in Signal Conditioners W-UNIT
暂无信息
0 MSYSTEM

CTDR5F-4R7M

Drum Core Inductors - Radial Leaded
暂无信息
1 Central Techn

WJT-11A-S/Q

Dual Output Plug-in Signal Conditioners W-UNIT
暂无信息
1 MSYSTEM

KUREN-45M1/Q

Plug-in Signal Conditioners K-UNIT
暂无信息
1 MSYSTEM

KCRS-BCH/Q

Plug-in Signal Conditioners K-UNIT
暂无信息
0 MSYSTEM

HMA82GS6AFR8N

DDR4 SDRAM SO-DIMM Based on 8Gb A-die
动态存储器 双倍数据速率
0 HYNIX

GRM0333C1E3R8WA01#

民用设备,工业设备,移动设备,植入式以外的医疗器械设备 [GHTF A/B/C],汽车[信息娱乐 / 舒适设备]
医疗 医疗器械
0 MURATA

KMD3AMB8BBDA1

Sealed Rocker Switch
暂无信息
0 CHERRY

NT6VM128T64CQ-T1

Commercial Mobile DDR 1Gb SDRAM
动态存储器 双倍数据速率
1 NANYA

FP6134-28S5P

600mA Low Dropout Linear Regulator with Shutdown
暂无信息
1 FITIPOWER

KCRS-GDF

Plug-in Signal Conditioners K-UNIT
暂无信息
0 MSYSTEM

KSF-3B-R/CE

Plug-in Signal Conditioners K-UNIT
暂无信息
0 MSYSTEM

WJR-1C1H/Q

Dual Output Plug-in Signal Conditioners W-UNIT
暂无信息
0 MSYSTEM

CT-12-V/CE

Plug-in Signal Conditioners M-UNIT
暂无信息
0 MSYSTEM

T25LQ32CVSIGT

3V 128M-BIT SERIAL NOR FLASH WITH DUAL AND QUAD SPI&QPI
暂无信息
0 HMSEMI

SMD3216-400N

Ceramic Gas Discharge Tube
暂无信息
0 LEIDITECH

KUREN-43P1

Plug-in Signal Conditioners K-UNIT
暂无信息
0 MSYSTEM

WJT-1A2-R/Q

Dual Output Plug-in Signal Conditioners W-UNIT
暂无信息
0 MSYSTEM

2N6520TA

High Voltage PNP Bipolar Junction Transistor
PC 晶体管
0 ONSEMI

NT6VM16M16AA-T1

Commercial Mobile DDR 1Gb SDRAM
动态存储器 双倍数据速率
1 NANYA

SD5D20-101M

SLIM INDUCTOR-RoHS
暂无信息
0 FENGJUI

KCRS-BAH

Plug-in Signal Conditioners K-UNIT
暂无信息
0 MSYSTEM

T25LQ64COIPR

3V 128M-BIT SERIAL NOR FLASH WITH DUAL AND QUAD SPI&QPI
暂无信息
1 HMSEMI

BD53E23G-M

罗姆的延迟时间自由设置型CMOS复位IC系列,是内置了采用CMOS工艺的高精度、低消耗电流的延迟电路的CMOS RESET IC系列。可通过外接电容器设定延迟时间。为保证客户可根据应用进行选择,备有Nch漏极开路输出(BD52Exxx-M)系列和CMOS输出(BD53Exxx-M)系列产品。备有检测电压为2.3V~6.0V的0.1V阶跃的产品阵容。
电容器
0 ROHM

NVMFS4C308NT1G

Power MOSFET 30V, 55A, 4.8 mΩ, Single N-Channel, SO8-FL, Logic Level.
暂无信息
1 ONSEMI
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