NE5510K0+/-1% [VISHAY]

Fixed Resistor, Metal Film, 0.25W, 10000ohm, 250V, 1% +/-Tol, -25,25ppm/Cel;
NE5510K0+/-1%
元器件型号: NE5510K0+/-1%
生产厂家: VISHAY TELEFUNKEN    VISHAY TELEFUNKEN
描述和应用:

Fixed Resistor, Metal Film, 0.25W, 10000ohm, 250V, 1% +/-Tol, -25,25ppm/Cel

电阻器
PDF文件: 总2页 (文件大小:247K)
下载文档:  下载PDF数据表文档文件
型号参数:NE5510K0+/-1%参数

NE5511279A

7.5 V UHF BAND RF POWER SILICON LD-MOS FET

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48 CEL

NE5511279A

NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET

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77 NEC

NE5511279A

NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET

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43 NEC

NE5511279A-A

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN

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0 NEC

NE5511279A-T1

NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET

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24 NEC

NE5511279A-T1

NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET

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28 NEC

NE5511279A-T1

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN

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0 CEL

NE5511279A-T1A

NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET

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28 NEC

NE5511279A-T1A

NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET

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12 NEC

NE5511279A-T1A

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN

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0 CEL

NE5511279A-T1-A

7.5 V UHF BAND RF POWER SILICON LD-MOS FET

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32 CEL

NE5511279A-T1A-A

7.5 V UHF BAND RF POWER SILICON LD-MOS FET

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24 CEL

NE5511K0+/-.1%

Fixed Resistor, Metal Film, 0.25W, 11000ohm, 250V, 0.1% +/-Tol, -25,25ppm/Cel

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0 VISHAY

NE5511K0+/-1%

Fixed Resistor, Metal Film, 0.25W, 11000ohm, 250V, 1% +/-Tol, -25,25ppm/Cel

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0 VISHAY

NE5512

Dual high-performance operational amplifier

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135 PHILIPS