RGP30D-E3/23 [VISHAY]

Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2;
RGP30D-E3/23
型号: RGP30D-E3/23
厂家: VISHAY    VISHAY
描述:

Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2

功效 二极管
文件: 总4页 (文件大小:85K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
RGP30A thru RGP30M  
Vishay General Semiconductor  
Glass Passivated Junction Fast Switching Rectifier  
FEATURES  
• Superectifier structure for High Reliability  
condition  
• Cavity-free glass-passivated junction  
• Fast switching for high efficiency  
• Low leakage current, typical I less than 0.2 µA  
R
• High forward surge capability  
• Meets environmental standard MIL-S-19500  
• Solder Dip 260 °C, 40 seconds  
DO-201AD  
* Glass-plastic encapsulation  
technique is covered by  
Patent No. 3,996,602, and  
brazed-lead assembly by  
Patent No. 3,930,306  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
For use in fast switching rectification of power supply,  
inverters, converters and freewheeling diodes for  
consumer, automotive and telecommunication.  
MAJOR RATINGS AND CHARACTERISTICS  
IF(AV)  
VRRM  
IFSM  
VF  
3.0 A  
50 V to 1000 V  
125 A  
MECHANICAL DATA  
Case: DO-201AD, molded epoxy over glass body  
Epoxy meets UL 94V-0 flammability rating  
1.3 V  
IR  
5.0 µA  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
Tj max.  
175 °C  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL RGP30A RGP30B RGP30D RGP30G RGP30J RGP30K RGP30M UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
Maximum DC blocking voltage  
100  
1000  
Maximum average forward rectified current  
0.375" (9.5 mm) lead length at TA = 55 °C  
IF(AV)  
3.0  
A
A
Peak forward surge current 8.3 ms single  
half sine-wave superimposed on rated load  
IFSM  
125  
Maximum full load reverse current, full  
cycle average 0.375" (9.5 mm) lead length  
at TA = 55 °C  
IR(AV)  
100  
µA  
°C  
Operating junction and storage  
temperature range  
TJ,TSTG  
- 65 to + 175  
Document Number 88704  
31-Mar-06  
www.vishay.com  
1
RGP30A thru RGP30M  
Vishay General Semiconductor  
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
TEST CONDITIONS SYMBOL RGP30A RGP30B RGP30D RGP30G RGP30J RGP30K RGP30M UNIT  
Maximum  
instantaneous  
forward voltage  
at 3.0 A  
VF  
1.3  
V
Maximum DC  
reverse current at TA = 25 °C  
5.0  
100  
IR  
µA  
rated DC blocking  
voltage  
T
A = 125 °C  
Maximumreverse IF = 0.5 A, IR = 1.0 A,  
trr  
150  
250  
500  
ns  
recovery time  
Irr = 0.25 A  
Typical junction  
capacitance  
at 4.0 V, 1 MHz  
CJ  
60  
pF  
THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL RGP30A RGP30B RGP30D RGP30G RGP30J RGP30K RGP30M UNIT  
Typical thermal resistance (1)  
RθJA 20 °C/W  
Note:  
(1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted  
ORDERING INFORMATION  
PREFERRED P/N  
RGP30J-E3/54  
RGP30J-E3/73  
UNIT WEIGHT (g)  
PREFERRED PACKAGE CODE BASE QUANTITY  
DELIVERY MODE  
1.28  
1.28  
54  
73  
1400  
1000  
13" Diameter Paper Tape & Reel  
Ammo Pack Packaging  
RATINGS AND CHARACTERISTICS CURVES  
(T = 25 °C unless otherwise noted)  
A
200  
100  
4.0  
Resistive or Inductive Load  
TJ = TJ max.  
8.3 ms Single Half Sine-Wave  
3.0  
2.0  
1.0  
0
0.375" (9.5 mm) Lead Length  
10  
0
25  
50  
75  
100  
125  
150  
175  
1
10  
100  
Ambient Temperature (°C)  
Number of Cycles at 60 Hz  
Figure 1. Forward Current Derating Curve  
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current  
www.vishay.com  
2
Document Number 88704  
31-Mar-06  
RGP30A thru RGP30M  
Vishay General Semiconductor  
10  
100  
TJ = 25 °C  
f = 1.0 MHz  
Vsig = 50 mVp-p  
1
TJ = 25 °C  
Pulse Width = 300 µs  
1 % Duty Cycle  
0.1  
0.01  
10  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1
10  
100  
Instantaneous Forward Voltage (V)  
Reverse Voltage (V)  
Figure 3. Typical Instantaneous Forward Characteristics  
Figure 5. Typical Junction Capacitance  
20  
TJ = 125 °C  
10  
TJ = 100 °C  
TJ = 75 °C  
1
0.1  
TJ = 25 °C  
0.01  
0
20  
40  
60  
80  
100  
Percent of Rated Peak Reverse Voltage (%)  
Figure 4. Typical Reverse Characteristics  
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)  
DO-201AD  
1.0 (25.4)  
MIN.  
0.210 (5.3)  
0.190 (4.8)  
DIA.  
0.375 (9.5)  
0.285 (7.2  
1.0 (25.4)  
MIN.  
0.052 (1.32)  
0.048 (1.22)  
DIA.  
Document Number 88704  
31-Mar-06  
www.vishay.com  
3
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

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