S505TXRW [VISHAY]

MOSMIC® for TV-Tuner Prestage with 5 V Supply Voltage; MOSMIC㈢的电视调谐器预安排与5 V电源电压
S505TXRW
型号: S505TXRW
厂家: VISHAY    VISHAY
描述:

MOSMIC® for TV-Tuner Prestage with 5 V Supply Voltage
MOSMIC㈢的电视调谐器预安排与5 V电源电压

射频和微波 射频放大器 微波放大器 电视
文件: 总6页 (文件大小:183K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
S505TX/S505TXR/S505TXRW  
Vishay Semiconductors  
®
MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage  
2
1
Comments  
MOSMIC - MOS Monolithic Integrated Circuit  
SOT-143  
3
4
Features  
2
1
• Easy Gate 1 switch-off with PNP switching  
transistors inside PLL  
• High AGC-range with less steep slope  
• Integrated gate protection diodes  
• Low noise figure  
e3  
SOT-143R  
SOT-343R  
4
3
2
1
• High gain, high forward transadmittance  
(30 mS typ.)  
• Improved cross modulation at gain reduction  
• SMD package  
4
3
19216  
• Lead (Pb)-free component  
Electrostatic sensitive device.  
Observe precautions for handling.  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
Applications  
Mechanical Data  
Low noise gain controlled input stages in UHF-and Typ: S505TX  
VHF- tuner with 5 V supply voltage.  
Case: SOT-143 Plastic case  
Weight: approx. 8.0 mg  
Pinning: 1 = Source, 2 = Drain,  
3 = Gate 2, 4 = Gate 1  
Typical Application  
Typ: S505TXR  
Case: SOT-143R Plastic case  
Weight: approx. 8.0 mg  
Pinning:1 = Source, 2 = Drain,  
3 = Gate 2, 4 = Gate 1  
RFC  
C block  
C block  
V
(V  
)
DD DS  
AGC  
D
G2  
G1  
RF out  
RF in  
Typ: S505TXRW  
C block  
S
Case: SOT-343R Plastic case  
Weight: approx. 6.0 mg  
Pinning: 1 = Source, 2 = Drain,  
3 = Gate 2, 4 = Gate 1  
RG1  
V
GG  
(V  
RG1  
)
13650  
Parts Table  
Part  
Marking  
Package  
S505TX  
X05  
SOT-143  
S505TXR  
S505TXRW  
X7R  
SOT-143R  
SOT-343R  
WX7  
Document Number 85080  
Rev. 1.2, 29-Apr-05  
www.vishay.com  
1
S505TX/S505TXR/S505TXRW  
Vishay Semiconductors  
Absolute Maximum Ratings  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Symbol  
VDS  
Value  
8
Unit  
V
Drain - source voltage  
Drain current  
ID  
30  
10  
mA  
mA  
Gate 1/Gate 2 - source peak  
current  
IG1/G2SM  
Gate 1 - source voltage  
+ VG1S  
- VG1S  
VG2SM  
Ptot  
6
V
V
1.5  
Gate 2 - source voltage  
Total power dissipation  
Channel temperature  
6
200  
V
Tamb 60 °C  
mW  
°C  
°C  
TCh  
150  
Storage temperature range  
Tstg  
- 55 to + 150  
Maximum Thermal Resistance  
Parameter  
Test condition  
Symbol  
RthChA  
Value  
450  
Unit  
K/W  
1)  
Channel ambient  
1) on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 μm Cu  
Electrical DC Characteristics  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Symbol  
Min  
12  
Typ.  
Max  
Unit  
V
Drain - source breakdown  
voltage  
ID = 10 μA, VG1S = VG2S = 0  
V(BR)DSS  
V(BR)G1SS  
V(BR)G2SS  
Gate 1 - source breakdown  
voltage  
IG1S = 10 mA, VG2S = VDS = 0  
IG2S = 10 mA, VG1S = VDS = 0  
7
7
10  
10  
V
V
Gate 2 - source breakdown  
voltage  
Gate 1 - source leakage current + VG1S = 5 V, VG2S = VDS = 0  
+ IG1SS  
IG2SS  
IDSO  
20  
20  
20  
nA  
nA  
Gate 2 - source leakage current  
V
G2S = 5 V, VG1S = VDS = 0  
DS = VRG1 = 5 V, VG2S = 4 V,  
RG1 = 56 kΩ  
Gate 1 - source cut-off voltage VDS = 5 V, VG2S = 4, ID = 20 μA VG1S(OFF)  
Gate 2 - source cut-off voltage DS = VRG1 = 5 V, RG1 = 56 kΩ, VG2S(OFF)  
ID = 20 μA  
Remark on improving intermodulation behavior:  
Drain - source operating current  
V
8
14  
mA  
0.5  
0.8  
1.3  
1.4  
V
V
V
1.0  
By setting RG1 smaller than 56 kΩ, typical value of IDSO will raise and improved intermodulation behavior will be performed.  
Electrical AC Characteristics  
Tamb = 25 °C, unless otherwise specified  
V
DS = VRG1 = 5 V, VG2S = 4 V, RG1 = 56 kΩ, ID = IDSO, f = 1 MHz  
Parameter Test condition  
Symbol  
|y21s  
Min  
27  
Typ.  
30  
Max  
35  
Unit  
mS  
Forward transadmittance  
Gate 1 input capacitance  
Feedback capacitance  
Output capacitance  
|
Cissg1  
Crss  
1.8  
20  
2.2  
30  
pF  
fF  
Coss  
1.0  
pF  
www.vishay.com  
2
Document Number 85080  
Rev. 1.2, 29-Apr-05  
S505TX/S505TXR/S505TXRW  
Vishay Semiconductors  
Parameter  
Test condition  
GS = 2 mS, GL = 0.5 mS,  
f = 200 MHz  
Symbol  
Gps  
Min  
Typ.  
28  
Max  
Unit  
dB  
Power gain  
GS = 3,3 mS, GL = 1 mS,  
f = 800 MHz  
Gps  
ΔGps  
F
17  
45  
22  
50  
1
dB  
dB  
AGC range  
V
DS = 5 V, VG2S = 1 to 4 V,  
f = 800 MHz  
S = 2 mS, GL = 0.5 mS,  
Noise figure  
G
dB  
f = 200 MHz  
GS = 3.3 mS, GL = 1 mS,  
f = 800 MHz  
F
1.3  
dB  
Cross modulation  
Input level for k = 1 % @ 0 dB  
AGC fw = 50 MHz,  
Xmod  
90  
dBμV  
funw = 60 MHz  
Input level for k = 1 % @ 40 dB  
AGC fw = 50 MHz,  
Xmod  
100  
105  
dBμV  
funw = 60 MHz  
Package Dimensions in mm  
3 [0.118]  
2.8 [0.110]  
0.5 [0.020]  
0.5 [0.020]  
0.35 [0.014]  
2.6 [0.102]  
2.35 [0.093]  
0.35 [0.014]  
1.8 [0.071]  
1.6 [0.063]  
0.5 [0.020]  
0.9 [0.035]  
0.75 [0.030]  
0.35 [0.014]  
foot print recommendation:  
1.7 [0.067]  
1.2 [0.047]  
1.2 [0.047]  
2 [0.079]  
1.8 [0.071]  
96 12239  
0.8 [0.031]  
0.8 [0.031]  
1.9 [0.075]  
Document Number 85080  
Rev. 1.2, 29-Apr-05  
www.vishay.com  
3
S505TX/S505TXR/S505TXRW  
Vishay Semiconductors  
Package Dimensions in mm  
3 [0.118]  
2.8 [0.110]  
0.5 [0.020]  
0.5 [0.020]  
0.35 [0.014]  
2.6 [0.102]  
0.35 [0.014]  
2.35 [0.093]  
1.8 [0.071]  
1.6 [0.063]  
0.5 [0.020]  
0.9 [0.035]  
0.75 [0.030]  
0.35 [0.014]  
foot print recommendation:  
1.7 [0.067]  
1.2 [0.047]  
0.8 [0.031]  
2 [0.079]  
1.8 [0.071]  
0.8 [0.031]  
0.8 [0.031]  
96 12240  
1.9 [0.075]  
Package Dimensions in mm  
2.2 [0.087]  
1.8 [0.071]  
0.4 [0.016]  
0.4 [0.016]  
0.15 [0.006] min.  
0.25 [0.010]  
0.25 [0.010]  
2.2 [0.087]  
2 [0.079]  
1.25 [0.049]  
1.05 [0.041]  
foot print recommendation:  
0.7 [0.028]  
0.55 [0.022]  
0.4 [0.016]  
0.25 [0.010]  
1.15 [0.045]  
0.06 [0.024]  
0.9 [0.035]  
1.4 [0.055]  
1.2 [0.047]  
1.3 [0.051]  
96 12238  
www.vishay.com  
4
Document Number 85080  
Rev. 1.2, 29-Apr-05  
S505TX/S505TXR/S505TXRW  
Vishay Semiconductors  
Ozone Depleting Substances Policy Statement  
It is the policy of Vishay Semiconductor GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and operating  
systems with respect to their impact on the health and safety of our employees and the public, as well as  
their impact on the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are  
known as ozone depleting substances (ODSs).  
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs  
and forbid their use within the next ten years. Various national and international initiatives are pressing for an  
earlier ban on these substances.  
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use  
of ODSs listed in the following documents.  
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments  
respectively  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
Protection Agency (EPA) in the USA  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting  
substances and do not contain such substances.  
We reserve the right to make changes to improve technical design  
and may do so without further notice.  
Parameters can vary in different applications. All operating parameters must be validated for each  
customer application by the customer. Should the buyer use Vishay Semiconductors products for any  
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all  
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal  
damage, injury or death associated with such unintended or unauthorized use.  
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
Document Number 85080  
Rev. 1.2, 29-Apr-05  
www.vishay.com  
5
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

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