SFH615AA-X007T [VISHAY]
暂无描述;型号: | SFH615AA-X007T |
厂家: | VISHAY |
描述: | 暂无描述 晶体 光电 晶体管 光电晶体管 输出元件 |
文件: | 总7页 (文件大小:116K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SFH615AA/AGB/AGR/ABM/ABL/AY/AB
Vishay Semiconductors
Optocoupler, Phototransistor Output, High Reliability, 5300 VRMS
FEATURES
• Low CTR degradation
• Good CTR linearity depending on forward
current
• Isolation test voltage, 5300 VRMS
C
E
• High collector emitter voltage, VCEO = 70 V
• Low saturation voltage
A
C
4
3
1
2
• Fast switching times
i179060
• Temperature stable
DESCRIPTION
• Low coupling capacitance
• End stackable, 0.100" (2.54 mm) spacing
The SFH615XXX features a large assortment of current
transfer ratio, low coupling capacitance and high isolation
voltage. These couplers have a GaAs infrared emitting diode
emitter, which is optically coupled to a silicon planar
phototransistor detector, and is incorporated in a plastic
DIP-4 package.
• High common mode interference immunity (unconnected
base)
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and
WEEE 2002/96/EC
The coupling devices are designed for signal transmission
between two electrically separated circuits.
AGENCY APPROVALS
• UL1577, file no. E52744 system code H or J, double
protection
The couplers are end-stackable with 2.54 mm lead spacing.
Creepage and clearance distances of > 8 mm are achieved
with option 6. This version complies with 60950 (DIN VDE
0805) for reinforced insulation up to operation voltage of 400
VRMS or DC.
• DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5 pending
available with option 1
• BSI IEC 60950; IEC 60065
ORDER INFORMATION
PART
REMARKS
SFH615AA
CTR 50 to 600 %, DIP-4
SFH615AB
CTR 80 to 260 %, DIP-4
SFH615ABL
CTR 200 to 600 %, DIP-4
SFH615ABM
CTR 200 to 400 %, DIP-4
SFH615AGB
CTR 100 to 600 %, DIP-4
SFH615AGR
CTR 100 to 300 %, DIP-4
SFH615AY
CTR 50 to 150 %, DIP-4
SFH615AA-X006
SFH615AA-X007
SFH615ABM-X006
SFH615ABM-X007
SFH615AGB-X006
SFH615AGB-X009
SFH615AGR-X006
SFH615AGR-X007
SFH615AY-X006
SFH615AY-X008
SFH615AY-X009
CTR 50 to 600 %, DIP-4 400 mil (option 6)
CTR 50 to 600 %, SMD-4 (option 7)
CTR 200 to 400 %, DIP-4 400 mil (option 6)
CTR 200 to 400 %, SMD-4 (option 7)
CTR 100 to 600 %, DIP-4 400 mil (option 6)
CTR 100 to 600 %, SMD-4 (option 9)
CTR 100 to 300 %, DIP-4 400 mil (option 6)
CTR 100 to 300 %, SMD-4 (option 7)
CTR 50 to 150 %, DIP-4 400 mil (option 6)
CTR 50 to 150 %,SMD-4 (option 8)
CTR 50 to 150 %,SMD-4 (option 9)
Note
For additional information on the available options refer to option information.
Document Number: 83672
Rev. 1.6, 10-Jan-08
For technical questions, contact: optocoupler.answers@vishay.com
www.vishay.com
1
SFH615AA/AGB/AGR/ABM/ABL/AY/AB
Optocoupler, Phototransistor Output,
Vishay Semiconductors
High Reliability, 5300 VRMS
ABSOLUTE MAXIMUM RATINGS (1)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
DC forward current
Surge forward current
Power dissipation
OUTPUT
VR
IF
6.0
60
V
mA
A
tP ≤ 10 ms
IFSM
Pdiss
2.5
100
mW
Collector emitter voltage
Emitter collector voltage
VCE
VEC
IC
70
7.0
50
V
V
mA
mA
mW
Collector current
tP ≤ 10 ms
IC
100
150
Total power dissipation
Pdiss
COUPLER
Isolation test voltage between emitter
and detector, refer to climate
DIN 40046, part 2, Nov. 74
VISO
5300
VRMS
Creepage distance
Clearance distance
≥ 7
≥ 7
mm
mm
Isolation thickness between emitter
and detector Comparative tracking
index per DIN IEC 112/VDE 0303, part 1
CTI
≥ 175
V
IO = 500 V, Tamb = 25 °C
RIO
RIO
≥ 1012
≥ 1011
Ω
Ω
Isolation resistance
V
IO = 500 V, Tamb = 100 °C
Storage temperature range
Ambient temperature range
Tstg
Tamb
- 55 to + 150
- 55 to + 100
°C
°C
max. 10 s, dip soldering distance
Soldering temperature (2)
Tsld
260
°C
to seating plane ≥ 1.5 mm
Notes
(1)
(2)
Tamb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
ELECTRICAL CHARACTERISTICS
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
Reverse current
Capacitance
IF = 60 mA
VF
IR
1.25
0.01
13
1.65
10
V
µA
V
R = 6.0 V
V
R = 0 V, f = 1.0 MHz
CO
Rthja
pF
Thermal resistance
OUTPUT
750
K/W
Collector emitter capacitance
Thermal resistance
V
CE = 5.0 V, f = 1.0 MHz
CCE
5.2
pF
Rthja
500
K/W
www.vishay.com
2
For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83672
Rev. 1.6, 10-Jan-08
SFH615AA/AGB/AGR/ABM/ABL/AY/AB
Optocoupler, Phototransistor Output,
Vishay Semiconductors
High Reliability, 5300 VRMS
ELECTRICAL CHARACTERISTICS
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
COUPLER
Collector emitter saturation
voltage
IF = 10 mA, IC = 2.5 mA
VCEsat
0.25
0.4
V
Coupling capacitance
CC
0.4
10
10
10
10
10
10
10
pF
nA
nA
nA
nA
nA
nA
nA
SFH615AA
SFH615AGB
SFH615AGR
SFH615ABM
SFH615ABL
SFH615AY
SFH615AB
ICEO
ICEO
ICEO
ICEO
ICEO
ICEO
ICEO
100
100
100
100
100
100
100
Collector emitter leakage
current
VCEO = 10 V
Note
amb = 25 °C, unless otherwise specified.
T
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
CURRENT TRANSFER RATIO
PARAMETER
TEST CONDITION
PART
SYMBOL
CTR
MIN.
50
TYP.
MAX.
600
600
300
400
600
150
260
UNIT
%
SFH615AA
SFH615AGB
SFH615AGR
CTR
100
100
200
200
50
%
CTR
%
IC/IF
IF = 5.0 mA, VCE = 5.0 V SFH615ABM
SFH615ABL
CTR
%
CTR
%
SFH615AY
CTR
%
SFH615AB
CTR
80
%
SWITCHING CHARACTERISTICS
PARAMETER
Turn-on time
Turn-off time
TEST CONDITION
SYMBOL
MIN.
TYP.
2.0
MAX.
UNIT
µs
IF = 5.0 mA
IF = 5.0 mA
ton
toff
25
µs
TYPICAL CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
%
3
10
I
1kΩ
F
I
= 10 mA, V
= 5.0 V
CC
F
I
I
C
F
5
V
= 5 V
CC
4
3
2
2
10
1
47 Ω
5
isfh615aa_01
1
10
- 25
0
25
50 °C 75
T
A
isfh615aa_02
Fig. 1 - Switching Operation (With Saturation)
Fig. 2 - Current Transfer Ratio (Typical) vs. Temperature
Document Number: 83672
Rev. 1.6, 10-Jan-08
For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com
3
SFH615AA/AGB/AGR/ABM/ABL/AY/AB
Optocoupler, Phototransistor Output,
Vishay Semiconductors
High Reliability, 5300 VRMS
4
mA
5
20
10
t
p
t
f = 1.0 MHz
pF
15
I
p
F
I
D =
F
D = 0
0.005
0.01
0.02
T
T
C
Pulse cycle
3
10
10
0.05
0.1
D = parameter
5
10
5
0.2
0.5
DC
2
5
C
CE
0
1
10
-2
-1
0
1
2
-5
-4
-3
-2
-1
0
1
10
10
10
10
V
10
10
10
10
10
10
10 s 10
V
e
t
p
isfh615aa_03
isfh615aa_06
Fig. 3 - Transistor Capacitance (Typ.) vs. Collector Emitter Voltage
Fig. 6 - Permissible Pulse Handling Capability Forward Current vs.
Pulse Width
120
1.2
mA
V
V
I
F
F
25 °C
50 °C
75 °C
90
60
30
0
1.1
1.0
0.9
-1
0
1
2
10
5
10
5
10
5 mA 10
0
25
50
75 °C 100
I
T
F
A
isfh615aa_07
isfh615aa_04
Fig. 4 - Permissible Diode Forward Current vs.
Ambient Temperature
Fig. 7 - Diode Forward Voltage (Typ.) vs. Forward Current
200
30
mA
mW
P
tot
I
I
= 14 mA
c
F
150
Transistor
I
I
I
= 12 mA
= 10 mA
= 8 mA
F
F
F
20
10
100
50
0
Diode
I
I
= 6 mA
= 4 mA
F
F
I
= 1 mA
I
= 2 mA
F
F
0
25
50
75 °C 100
0
T
0
5
10
V
15
A
isfh615aa_08
V
CE
isfh615aa_05
Fig. 8 - Permissible Power Dissipation vs. Temperature
Fig. 5 - Output Characteristics (Typ.) Collector Current vs.
Collector Emitter Voltage
www.vishay.com
4
For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83672
Rev. 1.6, 10-Jan-08
SFH615AA/AGB/AGR/ABM/ABL/AY/AB
Optocoupler, Phototransistor Output,
Vishay Semiconductors
High Reliability, 5300 VRMS
PACKAGE DIMENSIONS in inches (millimeters)
2
1
Pin one ID
0.255 (6.48)
0.268 (6.81)
ISO method A
3
4
0.179 (4.55)
0.190 (4.83)
0.300 (7.62) typ.
0.031 (0.79) typ.
0.050 (1.27) typ.
0.030 (0.76)
0.045 (1.14)
0.130 (3.30)
0.150 (3.81)
0.230 (5.84)
0.250 (6.35)
10°
4°
typ.
0.110 (2.79)
0.130 (3.30)
0.020 (0.508)
0.035 (0.89)
3° to 9°
0.008 (0.20)
0.018 (0.46)
0.050 (1.27)
0.100 (2.54)
0.012 (0.30)
0.022 (0.56)
i178027
Option 9
0.375 (9.53)
0.395 (10.03)
0.300 (7.62) ref.
0.040 (0.102)
0.098 (0.249)
0.012 (0.30) typ.
15° max.
0.020 (0.51)
0.040 (1.02)
0.315 (8.00)
18486
min.
Document Number: 83672
Rev. 1.6, 10-Jan-08
For technical questions, contact: optocoupler.answers@vishay.com
www.vishay.com
5
SFH615AA/AGB/AGR/ABM/ABL/AY/AB
Optocoupler, Phototransistor Output,
Vishay Semiconductors
High Reliability, 5300 VRMS
OZONE DEPLETING SUBSTANCES POLICY STATEMENT
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with
respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone
depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use
within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in
the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively.
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency
(EPA) in the USA.
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do
not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application by the
customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall
indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any
claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
www.vishay.com
6
For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83672
Rev. 1.6, 10-Jan-08
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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VISHAY
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