SI1022R [VISHAY]
N-Channel 60-V (D-S) MOSFET; N通道60 -V （D -S ）的MOSFET
| 型号： | SI1022R |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 60-V (D-S) MOSFET |
| 文件： | 总4页 (文件大小：41K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si1022R
Vishay Siliconix
New Product
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
V(BR)DSS(min) (V)
rDS(on) (W)
VGS(th) (V)
ID (mA)
60
1.25 @ V = 10 V
1 to 2.5
330
GS
FEATURES
BENEFITS
APPLICATIONS
D Low On-Resistance: 1.25 W
D Low Threshold: 2.5 V
D Low Offset Voltage
D Low-Voltage Operation
D High-Speed Circuits
D Low Error Voltage
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D Battery Operated Systems
D Low Input Capacitance: 30 pF
D Fast Switching Speed: 25 ns
D Solid-State Relays
D Low Input and Output Leakage D Small Board Area
D Miniature Package
SC-75A
(SOT-416)
G
S
1
2
Marking Code: E
3
D
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V
V
60
"20
330
DS
GS
V
T
= 25_C
= 85_C
A
a
Continuous Drain Current
I
D
T
A
240
mA
a
Pulsed Drain Current
I
650
DM
T
= 25_C
= 85_C
250
A
a
Power Dissipation
P
mW
D
T
A
130
a
Thermal Resistance, Maximum Junction-to-Ambient
R
thJA
500
_C/W
_C
Operating Junction and Storage Temperature Range
T , T
J
–55 to 150
stg
Notes
c. Surface Mounted on FR4 Board, Power Applied for tv10 sec.
Document Number: 71331
S-03049—Rev. A, 05-Feb-01
www.vishay.com
1
Si1022R
New Product
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Limits
Typ
Parameter
Symbol
Test Conditions
Min
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
V
V
= 0 V, I = 10 mA
60
1
(BR)DSS
GS
D
V
V
V
= V , I = 0.25 mA
2.5
GS(th)
DS
GS D
V
= 0 V, V = "10 V
"150
"500
DS
GS
T
J
= 85_C
Gate-Body Leakage
I
GSS
V
= 0 V, V = "5 V
"20
nA
DS
GS
V
= 50 V, V = 0 V
10
DS
GS
T
= 85_C
100
1
Zero Gate Voltage Drain Current
I
DSS
J
V
= 60 V, V = 0 V
mA
DS
GS
V
= 10 V, V = 4.5 V
500
800
DS
GS
a
On-State Drain Current
I
mA
D(on)
V
= 7.5 V, V = 10 V
GS
DS
V
= 4.5 V, I = 200 mA
3.0
5.0
GS
D
T
J
= 125_C
a
Drain-Source On-Resistance
r
W
DS(on)
V
V
= 10 V, I = 500 mA
1.25
2.25
GS
D
T
J
= 125_C
a
Forward Transconductance
g
fs
= 10 V, I = 200 mA
100
mS
V
DS
D
a
Diode Forward Voltage
V
V
= 0 V, I = 200 mA
1.30
SD
GS
S
Dynamicb
Input Capacitance
C
30
6
pF
nC
iss
V
= 25 V, V = 0 V
GS
f = 1 MHz
DS
Output Capacitance
C
oss
Reverse Transfer Capacitance
C
rss
2.5
V
=10 V, I = 250 mA
D
DS
Gate Charge
Q
g
0.6
V
= 4.5 V
GS
Switchingb, c
Turn-On Time
Turn-Off Time
t
25
35
V
= 30 V, R = 150 W
(on)
DD
L
ns
I
= 200 mA, V
= 10 V
D
GEN
t
(off)
R = 10 W
G
Notes
a. Pulse test: PW v300 ms duty cycle v2%.
TNJO60
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
Document Number: 71331
S-03049—Rev. A, 05-Feb-01
www.vishay.com
2
Si1022R
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
1.0
1200
900
600
300
0
6 V
T
J
= –55_C
V
= 10 thru 7 V
GS
5 V
0.8
0.6
0.4
0.2
0.0
25_C
125_C
4 V
3 V
0
1
2
3
4
5
0
1
2
3
4
5
6
V
– Drain-to-Source Voltage (V)
V
– Gate-to-Source Voltage (V)
GS
DS
On-Resistance vs. Drain Current
Capacitance
50
40
30
20
10
0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
V
= 0 V
GS
f = 1 MHz
V
= 4.5 V
C
GS
iss
V
= 10 V
GS
C
oss
C
rss
0
5
10
15
20
25
0
200
400
600
800
1000
I
D
– Drain Current (mA)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
7
6
5
4
3
2
1
0
2.0
1.6
1.2
0.8
0.4
0.0
V
= 10 V
= 250 mA
DS
V
= 10 V @ 500 mA
GS
I
D
V
= 4.5 V
GS
@ 200 mA
0.0
0.1
0.2
0.3
0.4
0.5
0.6
–50 –25
0
J
25
50
75
100 125 150
Q
g
– Total Gate Charge (nC)
T
– Junction Temperature (_C)
Document Number: 71331
S-03049—Rev. A, 05-Feb-01
www.vishay.com
3
Si1022R
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-Source Voltage
5
4
3
2
1
0
1000
V
= 0 V
GS
100
T
J
= 125_C
I
D
= 500 mA
10
1
T
J
= 25_C
I
D
= 200 mA
T
J
= –55_C
0
2
4
6
8
10
0.00
0.3
0.6
0.9
1.2
1.5
V
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
SD
Threshold Voltage Variance Over Temperature
Single Pulse Power, Junction-to-Ambient
0.4
3
2.5
0.2
I
D
= 250 mA
2
–0.0
–0.2
–0.4
–0.6
–0.8
1.5
1
0.5
0
T
A
= 25_C
–50 –25
0
25
50
75
100 125 150
0.01
0.1
1
10
100
600
T
J
– Junction Temperature (_C)
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 500_C/W
thJA
(t)
Z
3. T – T = P
DM thJA
JM
A
Single Pulse
4. Surface Mounted
0.01
–4
–3
–2
–1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 71331
S-03049—Rev. A, 05-Feb-01
www.vishay.com
4
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