SI1032X-T1-GE3 [VISHAY]
N-Channel 1.5-V (G-S) MOSFET; N沟道1.5 -V （G -S ）的MOSFET
| 型号： | SI1032X-T1-GE3 |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 1.5-V (G-S) MOSFET |
| 文件： | 总5页 (文件大小：121K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si1032R/X
Vishay Siliconix
N-Channel 1.5-V (G-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
•
•
•
•
•
•
Halogen-free Option Available
Low-Side Switching
VDS (V)
RDS(on) (Ω)
ID (mA)
200
5 at VGS = 4.5 V
7 at VGS = 2.5 V
9 at VGS = 1.8 V
10 at VGS = 1.5 V
Low On-Resistance: 5 Ω
Low Threshold: 0.9 V (typ.)
Fast Switching Speed: 35 ns
TrenchFET® Power MOSFETs: 1.5-V Rated
2000 V ESD Protection
RoHS
COMPLIANT
175
20
150
50
BENEFITS
•
•
•
•
•
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Circuits
SC-75A or SC-89
Low Battery Voltage Operation
G
S
1
APPLICATIONS
•
3
D
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories
Battery Operated Systems
Power Supply Converter Circuits
Load/Power Switching Cell Phones, Pagers
2
•
•
•
Marking Code: G
Top View
Ordering Information:
Si1032R-T1-E3 (SC-75A, Lead (Pb)-free)
Si1032R-T1-GE3 (SC-75A, Lead (Pb)-free and Halogen-free)
Si1032X-T1-E3 (SC-89, Lead (Pb)-free)
Si1032X-T1-GE3 (SC-89, Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Si1032R
Si1032X
SteadyState
Parameter
Symbol
VDS
Unit
5 s
SteadyState
20
5 s
Drain-Source Voltage
Gate-Source Voltage
V
VGS
ꢀ
TA = 25 °C
TA = 85 °C
200
110
140
100
210
150
200
140
Continuous Drain Current (TJ = 150 °C)a
Pulsed Drain Currenta
ID
mA
IDM
IS
500
ꢀ00
Continuous Source Current (Diode Conduction)a
250
280
145
200
250
130
300
340
170
240
300
150
TA = 25 °C
Maximum Power Dissipationa for SC-75
PD
mW
TA = 85 °C
TJ, Tstg
ESD
Operating Junction and Storage Temperature Range
Gate-Source ESD Rating (HBM, Method 3015)
- 55 to 150
2000
°C
V
Notes:
a. Surface Mounted on FR4 board.
Document Number: 71172
S-81543-Rev. E, 07-Jul-08
www.vishay.com
1
Si1032R/X
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VGS(th)
IGSS
VDS = VGS, ID = 250 µA
Gate Threshold Voltage
0.40
0.7
0.5
1.0
1.2
1.0
3.0
1
V
VDS = 0 V, VGS
DS = 0 V, VGS
=
=
2.8 V
4.5 V
Gate-Body Leakage
V
µA
mA
Ω
VDS = 20 V, VGS = 0 V
DS = 20 V, VGS = 0 V, TJ = 55 °C
VDS = 5 V, VGS = 4.5 V
IDSS
Zero Gate Voltage Drain Current
On-State Drain Currenta
V
10
ID(on)
250
VGS = 4.5 V, ID = 200 mA
5
7
V
V
GS = 2.5 V, ID = 175 mA
GS = 1.8 V, ID = 150 mA
Drain-Source On-State Resistancea
RDS(on)
9
V
GS = 1.5 V, ID = 40 mA
10
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
0.5
S
V
gfs
VDS = 10 V, ID = 200 mA
IS = 150 mA, VGS = 0 V
VSD
1.2
Qg
Qgs
Qgd
td(on)
tr
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
750
75
V
DS = 10 V, VGS = 4.5 V, ID = 250 mA
pC
ns
225
50
25
50
25
V
DD = 10 V, RL = 47 Ω
ID ≅ 200 mA, VGEN = 4.5 V, RG = 10 Ω
td(off)
tf
Turn-Off Delay Time
Fall Time
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS T = 25 °C, unless otherwise noted
A
0.5
0.4
0.3
0.2
0.1
0.0
ꢀ00
500
400
300
200
100
0
T
= - 55 °C
J
V
GS
= 5 thru 1.8 V
25 °C
125 °C
1 V
0
1
2
3
4
5
ꢀ
0.0
0.5
1.0
1.5
2.0
2.5
V
GS
- Gate-to-Source Voltage (V)
V
DS
- Drain-to-Source Voltage (V)
Transfer Characteristics
Output Characteristics
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Document Number: 71172
S-81543-Rev. E, 07-Jul-08
Si1032R/X
Vishay Siliconix
TYPICAL CHARACTERISTICS T = 25 °C, unless otherwise noted
A
50
40
30
20
10
0
100
80
ꢀ0
40
20
0
V
= 0 V
GS
f = 1 MHz
C
iss
V
GS
= 1.8 V
C
oss
V
= 2.5 V
GS
V
= 4.5 V
C
rss
GS
0
50
100
150
200
250
0
4
8
12
1ꢀ
20
V
DS
I
D
- Drain Current (mA)
- Drain-to-Source Voltage (V)
Capacitance
On-Resistance vs. Drain Current
5
4
3
2
1
0
1.ꢀ0
1.40
1.20
1.00
0.80
0.ꢀ0
V
D
= 10 V
DS
= 150 mA
I
V
D
= 4.5 V
GS
= 200 mA
I
V
D
= 1.8 V
GS
= 175 mA
I
0.0
0.2
0.4
0.ꢀ
0.8
- 50
- 25
0
25
50
75
100
125
Q
- Total Gate Charge (nC)
g
T - Junction Temperature (°C)
J
Gate Charge
On-Resistance vs. Junction Temperature
50
1000
T
= 125 °C
J
40
30
20
10
0
I
D
= 200 mA
100
10
T
= 25 °C
J
T
= 50 °C
J
I
D
= 175 mA
1
0.0
0.2
0.4
0.ꢀ
0.8
1.0
1.2
1.4
0
1
2
3
4
5
ꢀ
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Surge-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 71172
S-81543-Rev. E, 07-Jul-08
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3
Si1032R/X
Vishay Siliconix
TYPICAL CHARACTERISTICS T = 25 °C, unless otherwise noted
A
0.3
0.2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
I
D
= 0.25 mA
0.1
0.0
- 0.1
- 0.2
- 0.3
V
GS
= 2.8 V
- 50
- 25
0
25
50
75
100
125
- 50
- 25
0
25
T - Temperature (°C)
J
50
75
100
125
T
- Temperature (°C)
J
Threshold Voltage Variance vs. Temperature
IGSS vs. Temperature
7
ꢀ
5
4
3
2
1
0
- 50
- 25
0
25
50
75
100
125
T
- Temperature (°C)
J
BVGSS vs. Temperature
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 500 °C/W
thJA
(t)
3. T - T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
- 4
- 3
- 2
- 1
10
10
10
10
1
10
100
ꢀ00
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient (SC-75A, Si1032R Only)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?71172.
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Document Number: 71172
S-81543-Rev. E, 07-Jul-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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1
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