SI1040X-T1-GE3 [VISHAY]
Load Switch with Level-Shift; 与电平转换负载开关
| 型号： | SI1040X-T1-GE3 |
| 厂家： | 
VISHAY |
| 描述： | Load Switch with Level-Shift |
| 文件： | 总6页 (文件大小：126K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si1040X
Vishay Siliconix
Load Switch with Level-Shift
FEATURES
PRODUCT SUMMARY
•
•
•
•
•
•
•
Halogen-free Option Available
TrenchFET® Power MOSFET
1.8 to 8 V Input
VDS2 (V)
RDS(on) (Ω)
ID (A)
0.43
0.36
0.3
0.625 at VIN = 4.5 V
0.890 at VIN = 2.5 V
1.25 at VIN = 1.8 V
RoHS
1.8 to 8
COMPLIANT
1.5 to 8 V Logic Level Control
Smallest LITTLE FOOT® Package: 1.6 mm x 1.6 mm
2000 V ESD Protection On Input Switch, VON/OFF
Adjustable Slew-Rate
Si1040X
4
5
2, 3
6
D2
S2
Q2
DESCRIPTION
The Si1040X includes a P- and N-Channel MOSFET in a
single SC89-6 package. The low on-resistance P-Channel
TrenchFET is tailored for use as a load switch. The
N-Channel, with an external resistor, can be used as a
level-shift to drive the P-Channel load-switch. The
N-Channel MOSFET has internal ESD protection and can be
driven by logic signals as low as 1.5 V. The Si1040X
operates on supply lines from 1.8 V to 8 V, and can drive
loads up to 0.43 A.
R1, C1
Q1
ON/OFF
1
R2
SC89-6
Top View
R2
D2
D2
R1, C1
ON/OFF
S2
1
2
3
6
5
Marking Code
P
WL
Lot Traceability
and Date Code
4
Part Number Code
Ordering Information:Si1040X-T1-E3 (Lead (Pb)-free)
Si1040X-T1-GE3 (Lead (Pb)-free and Halogen-free)
TYPICAL APPLICATION CIRCUIT
Switching Variation R2 at V = 2.5 V, R1 = 20 kΩ
Si1040X
IN
20
16
12
8
2, 3
6
t
f
4
6
V
OUT
V
IN
Q2
R1
C1
I
= 0.36 A
L
V
= 3 V
ON/OFF
C = 10 µF
i
C
o
= 1 µF
5
t
r
ON/OFF
LOAD
C
o
t
d(off)
Q1
4
t
d(on)
C
i
0
1
0
2
4
6
8
10
R2
R2 (kΩ)
Note: For R2 switching variations with other V /R1
IN
GND
R2
combinations See Typical Characteristics
Document Number: 71809
S-80641-Rev. C, 24-Mar-08
www.vishay.com
1
Si1040X
Vishay Siliconix
The Si1040X is ideally suited for high-side load switching in
portable applications. The integrated N-Channel level-shift
device saves space by reducing external components. The
slew rate is set externally so that rise-times can be tailored to
different load types.
COMPONENTS
Typical 10 kΩ to 1 mΩa
Typical 0 to 100 kΩa
R1
R2
C1
Pull-Up Resistor
Optional Slew-Rate Control
Optional Slew-Rate Control
Typical 1000 pF
Notes:
a. Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-
on.
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
8
Unit
VIN
Input Voltage
ON/OFF Voltage
V
VON/OFF
8
Continuousa, b
Pulsedb, c
0.43
IL
Load Current
1.0
A
Continuous Intrinsic Diode Conductiona
Maximum Power Dissipationa
IS
PD
- 0.15
0.174
- 55 to 150
2
W
°C
kV
TJ, Tstg
ESD
Operating Junction and Storage Temperature Range
ESD Rating, MIL-STD-883D Human Body Model (100 pF, 1500 Ω)
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
720
Unit
Maximum Junction-to-Ambient (Continuous Current)a
RthJA
600
450
°C/W
RthJC
Maximum Junction-to-Foot (Q2)
540
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
OFF Characteristics
Reverse Leakage Current
IFL
VIN = 8 V, VON/OFF = 0 V
IS = - 0.15 A
1
µA
VSD
Diode Forward Voltage
ON Characteristics
Input Voltage Range
0.85
1.2
V
VIN
V
1.8
8
VON/OFF = 1.5 V, VIN = 4.5 V, ID = 0.43 A
VON/OFF = 1.5 V, VIN = 2.5 V, ID = 0.36 A
0.500
0.710
1.0
0.625
0.890
1.25
RDS(on)
On-Resistance (P-Channel) at 1 A
On-State (P-Channel) Drain Current
Ω
V
ON/OFF = 1.5 V, VIN = 1.8 V, ID = 0.3 A
VIN-OUT ≤ 0.2 V, VIN = 5 V, VON/OFF = 1.5 V
VIN-OUT ≤ 0.3 V, VIN = 3 V, VON/OFF = 1.5 V
1
ID(on)
A
0.8
Notes:
a. Surface Mounted on FR4 board.
b. VIN = 8 V, VON/OFF = 8 V, TA = 25 °C.
c. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 71809
S-80641-Rev. C, 24-Mar-08
Si1040X
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1.0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
V
= 1.5 to 8 V
ON/OFF
V
= 1.5 to 8 V
ON/OFF
0.8
0.6
0.4
0.2
0.0
T
= 125 °C
J
T
= 125 °C
J
T
= 25 °C
J
T
= 25 °C
J
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
I
- (A)
I
L
- (A)
L
VDROP vs. IL at VIN = 4.5 V
VDROP vs. IL at VIN = 2.5 V
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
V
= 1.5 to 8 V
ON/OFF
V
= 1.5 to 8 V
ON/OFF
T
= 125 °C
J
T
= 125 °C
J
T
= 25 °C
J
T
= 25 °C
J
0.0
0.2
0.4
0.6
0.8
- (A)
1.0
1.2
1.4
1.6
0
1
2
3
4
5
I
L
V
(V)
IN
VDROP vs. IL at VIN = 1.8 V
VDROP vs. IL at VIN = 0.5 V
0.20
0.15
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
I
V
= 0.3 A
I
V
= 0.3 A
L
L
= 1.8 to 8 V
= 1.5 to 8 V
ON/OFF
ON/OFF
0.10
V
IN
= 1.8 V
0.05
T = 125 °C
J
V
IN
= 4.5 V
0.00
T
= 25 °C
J
- 0.05
- 0.10
- 0.15
- 50 - 25
0
25
50
75
100 125 150
0
1
2
3
4
5
T - Junction Temperature (°C)
J
V
IN
(V)
VDROP Variance vs. Junction Temperature
On-Resistance vs. Input Voltage
Document Number: 71809
S-80641-Rev. C, 24-Mar-08
www.vishay.com
3
Si1040X
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1.6
20
16
12
8
I
V
= 0.3 A
L
V
IN
= 1.8 V
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
= 1.5 to 8 V
ON/OFF
t
f
I
L
= 0.36 A
V
IN
= 4.5 V
V
= 3 V
ON/OFF
C = 10 µF
i
C
o
= 1 µF
t
t
r
d(off)
4
t
d(on)
0
- 50 - 25
0
25
50
75
100 125 150
0
2
4
6
8
10
T - Junction Temperature (°C)
R2 (kΩ)
Switching Variation
R2 at VIN = 4.5 V, R1 = 20 kΩ
J
Normalized On-Resistance
vs. Junction Temperature
20
20
16
12
8
t
f
t
f
16
12
8
t
r
I
L
= 0.36 A
I
V
= 0.36 A
L
V
= 3 V
ON/OFF
= 3 V
ON/OFF
C = 10 µF
i
C = 10 µF
C
i
C
o
= 1 µF
= 1 µF
o
t
r
t
d(off)
t
d(off)
4
4
t
d(on)
t
d(on)
0
0
0
2
4
6
8
10
0
2
4
6
8
10
R2 (kΩ)
Switching Variation
R2 at VIN = 2.5 V, R1 = 20 kΩ
R2 (kΩ)
Switching Variation
R2 at VIN = 1.8 V, R1 = 20 kΩ
80
60
40
20
0
80
60
40
20
0
I
V
= 0.36 A
L
t
d(off)
= 3 V
ON/OFF
C = 10 µF
C
i
t
f
= 1 µF
t
f
o
t
d(off)
I
V
= 0.36 A
L
= 3 V
ON/OFF
C = 10 µF
C
i
= 1 µF
o
t
r
t
d(on)
t
r
t
d(on)
0
20
40
60
80
100
0
20
40
60
R2 (kΩ)
Switching Variation
R2 at VIN = 2.5 V, R1 = 300 kΩ
80
100
R2 (kΩ)
Switching Variation
R2 at VIN = 4.5 V, R1 = 300 kΩ
www.vishay.com
4
Document Number: 71809
S-80641-Rev. C, 24-Mar-08
Si1040X
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
80
t
f
60
40
20
0
t
d(off)
I
V
= 0.36 A
L
= 3 V
ON/OFF
C = 10 µF
C
i
t
r
= 1 µF
o
t
d(on)
0
20
40
60
80
100
R2 (kΩ)
Switching Variation
R2 at VIN = 1.8 V, R1 = 300 kΩ
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R
= 720 °C/W
thJA
(t)
3. T - T = P
JM
Z
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Dureation (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?71809.
Document Number: 71809
S-80641-Rev. C, 24-Mar-08
www.vishay.com
5
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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