SI1065X [VISHAY]
P-Channel 12-V (D-S) MOSFET; P通道12 -V （D -S ）的MOSFET
| 型号： | SI1065X |
| 厂家： | 
VISHAY |
| 描述： | P-Channel 12-V (D-S) MOSFET |
| 文件： | 总6页 (文件大小：109K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New Product
Si1065X
Vishay Siliconix
P-Channel 12-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
•
•
Halogen-free Option Available
TrenchFET® Power MOSFET
100 % Rg Tested
VDS (V)
RDS(on) (Ω)
ID (A)
1.18
1.07
0.49
Qg (Typ.)
0.130 at VGS = - 4.5 V
0.158 at VGS = - 2.5V
0.205 at VGS = - 1.8V
RoHS
COMPLIANT
- 12
6.7
APPLICATIONS
•
Load Switch for Portable Devices
SC-89 (6-LEADS)
S
D
D
G
1
2
3
6
5
D
D
S
Marking Code
XX
W
Lot Traceability
and Date Code
G
4
Part # Code
Top View
D
Ordering Information: Si1065X-T1-E3 (Lead (Pb)-free)
Si1065X-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
- 12
V
VGS
8
- 1.18b, c
- 0.94b, c
T
A = 25 °C
A = 70 °C
Continuous Drain Current (TJ = 150 °C)
ID
T
A
IDM
IS
- 8
Pulsed Drain Current
- 0.2b, c
0.236b, c
0.151b, c
- 55 to 150
T
A = 25 °C
Continuous Source-Drain Diode Current
TA = 25 °C
Maximum Power Dissipationa
PD
W
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
440
Maximum
Unit
t ≤ 5 s
Steady State
530
650
Maximum Junction-to-Ambienta, b
RthJA
°C/W
540
Notes:
a. Maximum under Steady State conditions is 650 °C/W.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
Document Number: 74320
S-80641-Rev. B, 24-Mar-08
www.vishay.com
1
New Product
Si1065X
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
VGS = 0 V, ID = - 250 µA
ID = - 250 µA
Drain-Source Breakdown Voltage
- 12
V
V
DS Temperature Coefficient
- 8.47
2.33
mV/°C
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS = VGS, ID = - 250 µA
- 0.45
- 0.95
100
- 1
V
IGSS
VDS = 0 V, VGS
=
8 V
nA
nA
µA
A
VDS = - 12 V, VGS = 0 V
IDSS
Zero Gate Voltage Drain Current
On-State Drain Currenta
V
DS = - 12 V, VGS = 0 V, TJ = 85 °C
- 10
ID(on)
V
DS = ≥ 5 V, VGS = - 4.5 V
- 8
VGS = - 4.5 V, ID = - 1.18 A
0.108
0.131
0.158
5.18
0.130
0.158
0.204
Drain-Source On-State Resistancea
RDS(on)
gfs
V
V
GS = - 2.5 V, ID = - 1.07 A
GS = - 1.8 V, ID = - 0.49 A
Ω
VDS = - 6 V, ID = - 1.18 A
Forward Transconductance
S
Dynamicb
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
480
190
145
7.2
6.7
0.84
2.7
10
VDS = - 6 V, VGS = 0 V, f = 1 MHz
DS = - 6 V, VGS = - 5 V, ID = - 1.18 A
pF
V
10.8
10.1
Qg
Total Gate Charge
nC
Ω
Qgs
Qgd
Rg
V
DS = - 6 V, VGS = - 4.5 V, ID = - 1.18
f = 1 MHz
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
15
td(on)
tr
td(off)
tf
13
19.5
40.5
67.5
40.5
V
DD = - 6 V, RL = 6.32 Ω
27
ns
ID ≅ - 0.95 A, VGEN = - 4.5 V, Rg = 1 Ω
Turn-Off DelayTime
Fall Time
45
27
Drain-Source Body Diode Characteristics
Pulse Diode Forward Currenta
Body Diode Voltage
ISM
VSD
trr
8
A
V
IS = - 0.63 A
0.8
29.2
10.22
13.7
15.5
1.2
44
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
nC
Qrr
ta
15.3
IF = - 0.7 A, di/dt = 100 A/µs
ns
tb
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 74320
S-80641-Rev. B, 24-Mar-08
New Product
Si1065X
Vishay Siliconix
TYPICAL CHARACTERISTICS T = 25 °C, unless otherwise noted
A
2.0
1.5
1.0
0.5
0.0
8
6
4
2
0
V
GS
= 5 V thru 2.5 V
V
GS
= 2 V
T
= 25 °C
C
T
C
= 125 °C
V
GS
= 1.5 V
T
C
= - 55 °C
V
GS
= 1.0 V
0.0
0.5
1.0
V - Gate-to-Source Voltage (V)
GS
1.5
2.0
0.0
0.6
1.2
1.8
2.4
3.0
V
- Drain-to-Source Voltage (V)
DS
Transfer Characteristics Curves vs. Temp.
Output Characteristics
1000
800
600
400
200
0
0.25
0.20
0.15
0.10
0.05
0.00
V
GS
= 1.8 V
V
GS
= 2.5 V
C
iss
V
GS
= 4.5 V
C
oss
C
rss
0
2
4
6
8
0
3
6
9
12
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
5
4
3
2
1
0
1.4
1.3
1.2
1.1
1.0
0.9
0.8
V
= 4.5 V, I = 1.18 A
D
I
D
= 1.18 A
GS
V
GS
= 2.5 V, I = 1.07 A
D
V
DS
= 6 V
V
DS
= 9.6 V
V
= 1.8 V, I = 0.94 A
D
GS
0
2
4
6
8
- 50 - 25
0
25
50
75
100 125 150
Q
g
- Total Gate Charge (nC)
V
- Gate-to-Source Voltage (V)
GS
Qg - Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 74320
S-80641-Rev. B, 24-Mar-08
www.vishay.com
3
New Product
Si1065X
Vishay Siliconix
TYPICAL CHARACTERISTICS T = 25 °C, unless otherwise noted
A
0.24
10
I
= 1.09 A
D
0.18
1
T
A
= 125 °C
0.12
T
= 150 °C
J
T
A
= 25 °C
T
= 25 °C
J
0.1
0.06
0.00
0.01
0
0.2
0.4
0.6
0.8
1
0
1
2
3
4
5
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
RDS(on) vs. VGS vs. Temperature
0.9
0.8
0.7
0.6
0.5
0.4
0.3
- 12
- 12.5
- 13
I
D
= 250 µA
- 13.5
- 14
- 50 - 25
0
25
50
75
100 125 150
- 50 - 25
0
25
Temperature (°C)
BVDSS vs. Temparture
50
75
125
100
150
T
J
- Temperature (°C)
Threshold Voltage
10
Limited by R
DS(on)*
1 ms
10 ms
1
100 ms
1 s
0.1
0.01
10 s
DC
T
A
= 25 °C
Single Pulse
BVDSS Limited
10 100
0.001
0.1
1
V
DS
- Drain-to-Source Voltage (V)
* V
> minimum V at which R
is specified
DS(on)
GS
GS
Safe Operating Area, Junction-to-Ambient
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Document Number: 74320
S-80641-Rev. B, 24-Mar-08
New Product
Si1065X
Vishay Siliconix
TYPICAL CHARACTERISTICS T = 25 °C, unless otherwise noted
A
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Notes:
0.01
P
DM
t
1
t
2
t
t
1
1. Duty Cycle, D =
0.001
2
2. Per Unit Base = R
= 540 °C/W
thJA
(t)
Single Pulse
3. T - T = P
Z
JM DM thJA
A
4. Surface Mounted
0.0001
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
1000
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?74320
Document Number: 74320
S-80641-Rev. B, 24-Mar-08
www.vishay.com
5
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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