SI1400DL-T3 [VISHAY]
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET;
| 型号： | SI1400DL-T3 |
| 厂家： | 
VISHAY |
| 描述： | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
| 文件： | 总5页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si1400DL
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
0.150 @ V = 4.5 V
1.7
1.3
GS
20
0.235 @ V = 2.5
GS
V
SOT-363
SC-70 (6-LEADS)
D
D
G
1
6
D
D
S
Marking Code
ND XX
5
4
2
3
Lot Traceability
and Date Code
Part # Code
Top View
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
5 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
20
DS
GS
V
V
"12
T
= 25_C
= 85_C
1.6
1.0
1.7
1.2
A
a
Continuous Drain Current (T = 150_C)
I
J
D
T
A
A
Pulsed Drain Current
I
5
DM
a
Continuous Source Current (Diode Conduction)
I
0.8
0.625
0.40
0.8
S
T
= 25_C
= 85_C
0.568
0.295
A
a
Maximum Power Dissipation
P
W
D
T
A
Operating Junction and Storage Temperature Range
T , T
–55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 5 sec
Steady State
Steady State
165
180
105
200
220
130
a
Maximum Junction-to-Ambient
R
thJA
R
thJF
_C/W
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71179
S-05630—Rev. B, 11-Feb-02
www.vishay.com
1
Si1400DL
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = 250 mA
0.6
V
GS(th)
DS
GS
D
V
DS
= 0 V, V = "12 V
GS
I
"100
nA
GSS
V
= 16 V, V = 0 V
1
5
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= 16 V, V = 0 V, T = 85_C
GS
J
a
On-State Drain Current
I
2
A
V
DS
w 5 V, V = 4.5 V
GS
D(on)
0.123
0.150
0.235
V
= 4.5 V, I = 1.7 A
D
GS
a
Drain-Source On-State Resistance
r
W
DS(on)
V
= 2.5 V, I = 1.3 A
0.195
5
GS
D
a
Forward Transconductance
g
fs
V
= 10 V, I = 1.7 A
S
V
DS
D
a
Diode Forward Voltage
V
SD
I
= 0.8 A, V = 0 V
0.78
1.1
4.0
S
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q
2.1
0.3
0.4
10
30
14
8
g
Q
Q
V
= 10 V, V = 4.5 V, I = 1.7 A
nC
ns
gs
gd
DS
GS
D
t
17
50
25
15
50
d(on)
t
r
V
= 10 V, R = 20 W
L
= 4.5 V, R = 6 W
GEN G
DD
I
^ 1 A, V
D
Turn-Off Delay Time
Fall Time
t
d(off)
t
f
Source-Drain Reverse Recovery Time
t
rr
I
= 0.8 A, di/dt = 100 A/ms
30
F
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
5
5
4
3
2
1
0
2.5 V
V
GS
= 4.5 thru 3 V
4
3
2
1
0
2 V
T
= 125_C
C
25_C
1.5 V
3.0
–55_C
0.0
0.5
1.0
DS
1.5
2.0
2.5
3.5
4.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Document Number: 71179
www.vishay.com
S-05630—Rev. B, 11-Feb-02
2
Si1400DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.5
300
240
180
120
60
0.4
0.3
C
iss
V
GS
= 2.5 V
0.2
0.1
0.0
V
GS
= 4.5 V
C
oss
C
rss
0
0
1
2
3
4
5
0
4
8
12
16
20
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
4.5
3.6
2.7
1.8
0.9
0.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
= 10 V
= 1.7 A
V
= 4.5 V
DS
GS
I
D
I = 1.7 A
D
0.0
0.5
1.0
1.5
2.0
2.5
–50 –25
0
25
50
75
100 125 150
Q
– Total Gate Charge (nC)
T – Junction Temperature (_C)
J
g
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.40
0.32
0.24
0.16
0.08
0.00
10
I
D
= 1.7 A
T
= 150_C
J
1
T
= 25_C
J
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Document Number: 71179
www.vishay.com
S-05630—Rev. B, 11-Feb-02
3
Si1400DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.4
10
8
0.2
I
D
= 250 mA
6
–0.0
–0.2
–0.4
–0.6
4
2
0
–50 –25
0
25
50
75
100 125 150
0.01
1
10
30
0.1
T
– Temperature (_C)
Time (sec)
J
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
=400_C/W
thJA
(t)
3. T – T = P Z
DM thJA
Single Pulse
JM
A
4. Surface Mounted
0.01
–4
–3
–2
–1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
–4
–3
–2
–1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 71179
www.vishay.com
S-05630—Rev. B, 11-Feb-02
4
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
相关型号：
SI1403CDL-T1-GE3
TRANSISTOR 2100 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SC-70, 6 PIN, FET General Purpose Small Signal
VISHAY
SI1403DL-T1
Small Signal Field-Effect Transistor, 1.4A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN
VISHAY
©2020 ICPDF网 联系我们和版权申明