SI1410EDH [VISHAY]
N-Channel 20-V (D-S) MOSFET; N通道20 -V （D -S ）的MOSFET
| 型号： | SI1410EDH |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 20-V (D-S) MOSFET |
| 文件： | 总5页 (文件大小：43K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si1410EDH
Vishay Siliconix
New Product
N-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFETS: 1.8-V Rated
D ESD Protected: 2000 V
VDS (V)
rDS(on) (W)
ID (A)
D Thermally Enhanced SC-70 Package
APPLICATIONS
0.070 @ V = 4.5 V
3.7
3.4
3.0
GS
20
0.080 @ V = 2.5
GS
V
V
D Load Switching
D PA Switch
0.100 @ V = 1.8
GS
D Level Switch
SOT-363
SC-70 (6-LEADS)
D
D
1
2
3
6
D
D
S
Marking Code
AA XX
1 kW
5
4
D
G
G
Lot Traceability
and Date Code
Part # Code
Top View
S
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
5 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
V
20
DS
V
"12
GS
T
= 25_C
= 85_C
2.9
2.0
3.7
2.6
A
a
Continuous Drain Current (T = 150_C)
I
D
J
T
A
A
Pulsed Drain Current
I
8
DM
a
Continuous Diode Current (Diode Conduction)
I
1.4
0.9
1.0
S
T
= 25_C
= 85_C
1.56
0.81
A
a
Maximum Power Dissipation
P
W
D
T
A
0.52
Operating Junction and Storage Temperature Range
T , T
–55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 5 sec
Steady State
Steady State
60
100
34
80
125
45
a
Maximum Junction-to-Ambient
R
thJA
R
thJF
_C/W
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71409
S-03185—Rev. A, 05-Mar-01
www.vishay.com
1
Si1410EDH
New Product
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V , I = 250 mA
0.45
V
GS
D
V
DS
= 0 V, V = "4.5 V
GS
"1
mA
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V = "12 V
GS
"10
mA
V
= 16 V, V = 0 V
1
5
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= 16 V, V = 0 V, T = 85_C
GS
J
a
On-State Drain Current
I
V
DS
= 5 V, V = 4.5 V
4
A
D(on)
GS
V
= 4.5 V, I = 3.7 A
0.055
0.065
0.070
0.080
GS
GS
GS
D
a
V
V
= 2.5 V, I = 3.4 A
D
Drain-Source On-State Resistance
r
W
DS(on)
0.080
0.100
= 1.8 V, I = 1.7 A
D
a
Forward Transconductance
g
V
= 10 V, I = 3.7 A
10
S
V
fs
DS
D
a
Diode Forward Voltage
V
SD
I
S
= 1.4 A, V = 0 V
0.75
1.1
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q
5.6
0.75
1.10
0.15
0.4
8
g
Q
Q
V
= 10 V, V = 4.5 V, I = 3.7 A
nC
gs
gd
DS
GS
D
t
0.25
0.6
2.8
1.8
d(on)
t
r
V
DD
= 10 V, R = 10 W
L
ms
I
^ 1 A, V
= 4.5 V, R = 6 W
D
GEN G
Turn-Off Delay Time
Fall Time
t
1.9
d(off)
t
f
1.2
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Gate-Current vs. Gate-Source Voltage
Gate Current vs. Gate-Source Voltage
10
10,000
1,000
100
8
6
4
2
0
10
T
= 150_C
J
1
T
= 25_C
J
0.1
0.01
0
3
6
9
12
15
18
0
3
6
9
12
V
GS
– Gate-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Document Number: 71409
www.vishay.com
S-03185—Rev. A, 05-Mar-01
2
Si1410EDH
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
8
8
6
4
2
0
25_C
V
GS
= 5 thru 2 V
6
4
2
0
1.5 V
T
= –55_C
C
125_C
1 V
0
1
2
3
4
5
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
1000
800
600
400
200
0
0.15
0.12
0.09
0.06
0.03
0.00
C
iss
V
= 1.8 V
GS
V
= 2.5 V
= 4.5 V
GS
V
GS
C
oss
C
rss
0.0
1.5
3.0
4.5
6.0
7.5
0
4
8
12
16
20
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
5
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
= 10 V
V
GS
= 4.5 V
DS
I
D
= 3.7
A
I = 3.7 A
D
4
3
2
1
0
0.0
1.5
3.0
4.5
6.0
7.5
–50 –25
0
25
50
75
100 125 150
Q
– Total Gate Charge (nC)
T – Junction Temperature (_C)
J
g
Document Number: 71409
S-03185—Rev. A, 05-Mar-01
www.vishay.com
3
Si1410EDH
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.25
0.20
0.15
0.10
0.05
0.00
10
T
= 150_C
T
= 25_C
I
D
= 3.7 A
J
J
1
0.1
0
1
2
3
4
5
6
0
0.3
0.6
0.9
1.2
1.5
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
0.2
0.1
35
28
I
D
= 250 mA
–0.0
–0.1
–0.2
–0.3
–0.4
21
14
7
0
–50 –25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
Time (sec)
T
– Temperature (_C)
J
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 100_C/W
thJA
(t)
3. T – T = P Z
DM thJA
JM
A
Single Pulse
4. Surface Mounted
0.01
–4
–3
–2
–1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 71409
S-03185—Rev. A, 05-Mar-01
www.vishay.com
4
Si1410EDH
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
–4
–3
–2
–1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 71409
www.vishay.com
S-03185—Rev. A, 05-Mar-01
5
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