SI1473DH-T1-GE3 [VISHAY]
P-CHANNEL 30-V (D-S) MOSFET - Tape and Reel;
| 型号： | SI1473DH-T1-GE3 |
| 厂家： | 
VISHAY |
| 描述： | P-CHANNEL 30-V (D-S) MOSFET - Tape and Reel 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总12页 (文件大小：245K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si1473DH
Vishay Siliconix
P-Channel 30 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
VDS (V)
RDS(on) (Ω)
Qg (Typ.)
I
D (A)c
Definition
0.100 at VGS = - 10 V
0.145 at VGS = - 4.5 V
- 2.7
- 2.7
•
TrenchFET® Power MOSFET
- 30
4.1 nC
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
SOT-363
SC-70 (6-LEADS)
•
Load Switch for Portable Devices
D
D
G
1
2
3
6
D
D
S
Marking Code
S
BJ XX
5
4
Lot Traceability
and Date Code
G
Part #
Code
Top View
Ordering Information: Si1473DH-T1-E3 (Lead (Pb)-free)
D
Si1473DH-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
- 30
20
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
V
VGS
-2.7c
- 2.7c
- 2.8a, b
- 2.3a, b
- 8
TC = 25 °C
C = 70 °C
T
Continuous Drain Current (TJ = 150 °C)a, b
ID
TA = 25 °C
TA = 70 °C
A
IDM
IS
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source-Drain Diode Currenta, b
TC = 25 °C
TA = 25 °C
TC = 25 °C
- 2.3
- 1.25a, b
2.78
T
C = 70 °C
A = 25 °C
1.78
Maximum Power Dissipationa, b
PD
W
1.5a, b
T
1a, b
- 55 to 150
260
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)c, d
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta, d
RthJA
t ≤ 5 s
60
34
80
45
°C/W
RthJF
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. Package limited.
d. Maximum under Steady State conditions is 125 °C/W.
Document Number: 74438
S10-0646-Rev. E, 22-Mar-10
www.vishay.com
1
Si1473DH
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
VGS = 0 V, ID = - 250 µA
ID = - 250 µA
Drain-Source Breakdown Voltage
- 30
V
V
DS Temperature Coefficient
- 32
4
mV/°C
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS = VGS, ID = - 250 µA
- 1
- 3
- 3
- 100
- 1
V
IGSS
VDS = 0 V, VGS
=
20 V
nA
VDS = - 30 V, VGS = 0 V
DS = - 30 V, VGS = 0 V, TJ = 55 °C
VDS ≤ 5 V, VGS = - 10 V
IDSS
ID(on)
RDS(on)
gfs
Zero Gate Voltage Drain Current
On-State Drain Currenta
µA
A
V
- 10
VGS = - 10 V, ID = - 2.0 A
0.084
0.120
6
0.100
0.145
Drain-Source On-State Resistancea
Ω
S
VGS = - 4.5 V, ID = - 1.6 A
Forward Transconductancea
VDS = - 10 V, ID = - 2.0 A
Dynamicb
Ciss
Coss
Crss
Qg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
365
68
51
4.1
1.2
1.7
9.2
24
60
25
15
4
VDS = - 15 V, VGS = 0 V, f = 1 MHz
pF
6.2
Qgs
Qgd
Rg
VDS = - 15 V, VGS = - 4.5 V, ID = - 2.5 A
f = 1 MHz
nC
Ω
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
40
100
40
25
8
V
DD = - 15 V, RL = 7.5 Ω
ID ≅ - 2 A, VGEN = - 4.5 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
ns
Turn-On Delay Time
Rise Time
10
15
6
20
25
12
V
DD = - 15 V, RL = 7.5 Ω
ID ≅ - 2 A, VGEN = - 10 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
IS
ISM
VSD
trr
TC = 25 °C
- 1.6
- 6.5
- 1.2
35
A
IS = - 2 A, VGS = 0 V
Body Diode Voltage
- 0.85
23
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
ns
nC
Qrr
ta
15
23
IF = - 2.0 A, dI/dt = 100 A/µs, TJ = 25 °C
9
ns
tb
Reverse Recovery Rise Time
14
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 74438
S10-0646-Rev. E, 22-Mar-10
Si1473DH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
2.0
1.6
1.2
0.8
0.4
0.0
V
GS
= 10 V thru 5 V
4 V
8
6
4
2
0
T
= 125 °C
J
25 °C
3 V
- 55 °C
0.0
0.6
1.2
1.8
2.4
3.0
1
2
3
4
5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
600
480
360
240
120
0
0.20
0.16
0.12
0.08
0.04
0.00
C
iss
V
GS
= 4.5 V
V
= 10 V
GS
C
oss
C
rss
0.0
1.6
3.2
4.8
6.4
8.0
0
6
12
18
24
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
8
1.6
1.4
1.2
1.0
0.8
0.6
I
D
= 2.5 A
I
D
= 2 A
V
GS
= 10 V
V
DS
= 10 V
V
= 15 V
DS
V
GS
= 4.5 V
6
V
DS
= 20 V
4
2
0
0
2
4
6
8
10
- 50 - 25
0
25
50
75
100 125 150
Q
- Total Gate Charge (nC)
T - Junction Temperature (°C)
J
g
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 74438
S10-0646-Rev. E, 22-Mar-10
www.vishay.com
3
Si1473DH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.5
0.4
0.3
0.2
0.1
0.0
10
I
D
= 2 A
TJ = 150 °C
1
TJ = 25 °C
TJ = 125 °C
0.1
TJ = 25 °C
0.01
0
1
2
3
4
5
6
7
8
9
10
0.0
0.3
0.6
0.9
1.2
1.5
V
GS
- Gate-to-Source Voltage (V)
V
SD
- Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.6
30
24
18
12
6
0.4
0.2
I
D
= 250 µA
I
D
= 5 mA
0.0
- 0.2
- 0.4
0
- 50 - 25
0
25
50
75
100 125 150
0.1
0.001
0.01
1
10
T
- Temperature (°C)
Time (s)
J
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
10
Limited by R
*
DS(on)
1
1 ms
10 ms
100 ms
0.1
1 s
10 s
DC
T
= 25 °C
C
Single Pulse
0.01
0.01
10
- Drain-to-Source Voltage (V)
100
0.1
1
V
DS
* V
GS
minimum V at which R is specified
DS(on)
GS
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 74438
S10-0646-Rev. E, 22-Mar-10
Si1473DH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
4.5
3.5
2.8
2.1
1.4
0.7
0.0
3.6
Package Limited
2.7
1.8
0.9
0.0
0
25
50
75
100
125
150
0
25
50
T - Case Temperature (°C)
C
75
100
125
150
T
- Case Temperature (°C)
C
Power Derating, Junction-to-Foot
Current Derating*
1.20
0.96
0.72
0.48
0.24
0.00
0
25
50
75
100
125
150
T
- Ambient Temperature (°C)
A
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 74438
S10-0646-Rev. E, 22-Mar-10
www.vishay.com
5
Si1473DH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
P
DM
t
1
0.05
0.02
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 125 °C/W
thJA
(t)
3. T - T = P
JM
Z
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
1000
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?74438.
www.vishay.com
6
Document Number: 74438
S10-0646-Rev. E, 22-Mar-10
Package Information
Vishay Siliconix
SCĆ70: 6ĆLEADS
MILLIMETERS
INCHES
Dim Min
Nom Max Min Nom Max
6
1
5
2
4
3
0.90
–
–
1.10
0.10
1.00
0.30
0.25
2.20
2.40
1.35
0.035
–
–
–
0.043
0.004
0.039
0.012
0.010
0.087
0.094
0.053
A
E
E
1
–
A1
0.80
–
0.031
0.006
0.004
0.071
0.071
0.045
–
A2
0.15
–
–
b
-B-
0.10
–
–
c
e
b
1.80
2.00
2.10
1.25
0.65BSC
1.30
0.20
7_Nom
0.079
0.083
0.049
0.026BSC
0.051
0.008
7_Nom
D
e
1
1.80
E
-A-
D
1.15
E1
c
e
1.20
1.40
0.30
0.047
0.004
0.055
0.012
A
e1
A
2
1
0.10
L
L
A
ECN: S-03946—Rev. B, 09-Jul-01
DWG: 5550
Document Number: 71154
06-Jul-01
www.vishay.com
1
AN815
Vishay Siliconix
Single-Channel LITTLE FOOTR SC-70 6-Pin MOSFET
Copper Leadframe Version
Recommended Pad Pattern and Thermal Performance
INTRODUCTION
EVALUATION BOARDS ꢀ SINGLE SC70-6
The new single 6-pin SC-70 package with a copper leadframe
enables improved on-resistance values and enhanced
thermal performance as compared to the existing 3-pin and
6-pin packages with Alloy 42 leadframes. These devices are
intended for small to medium load applications where a
miniaturized package is required. Devices in this package
come in a range of on-resistance values, in n-channel and
p-channel versions. This technical note discusses pin-outs,
package outlines, pad patterns, evaluation board layout, and
thermal performance for the single-channel version.
The evaluation board (EVB) measures 0.6 inches by
0.5 inches. The copper pad traces are the same as in Figure 2.
The board allows examination from the outer pins to 6-pin DIP
connections, permitting test sockets to be used in evaluation
testing. See Figure 3.
52 (mil)
BASIC PAD PATTERNS
6
5
2
4
3
See Application Note 826, Recommended Minimum Pad
Patterns With Outline Drawing Access for Vishay Siliconix
MOSFETs, (http://www.vishay.com/doc?72286) for the basic
pad layout and dimensions. These pad patterns are sufficient
for the low to medium power applications for which this
package is intended. Increasing the drain pad pattern yields a
reduction in thermal resistance and is a preferred footprint.
The availability of four drain leads rather than the traditional
single drain lead allows a better thermal path from the package
to the PCB and external environment.
96 (mil)
71 (mil)
26 (mil)
1
13 (mil)
0, 0 (mil)
18 (mil)
26 (mil)
PIN-OUT
16 (mil)
Figure
1 shows the pin-out description and Pin 1
FIGURE 2.
SC-70 (6 leads) Single
identification.The pin-out of this device allows the use of four
pins as drain leads, which helps to reduce on-resistance and
junction-to-ambient thermal resistance.
SOT-363
SC-70 (6-LEADS)
The thermal performance of the single 6-pin SC-70 has been
measured on the EVB, comparing both the copper and
Alloy 42 leadframes. This test was first conducted on the
traditional Alloy 42 leadframe and was then repeated using the
1-inch2 PCB with dual-side copper coating.
D
D
G
1
2
3
6
5
D
D
S
4
Top View
FIGURE 1.
For package dimensions see outline drawing SC-70 (6-Leads)
(http://www.vishay.com/doc?71154)
Document Number: 71334
12-Dec-03
www.vishay.com
1
AN815
Vishay Siliconix
Front of Board SC70-6
Back of Board SC70-6
vishay.com
FIGURE 3.
THERMAL PERFORMANCE
Junction-to-Foot Thermal Resistance
(Package Performance)
COOPER LEADFRAME
Room Ambient 25 _C
Elevated Ambient 60 _C
The junction to foot thermal resistance is a useful method of
comparing different packages thermal performance.
T
J(max) * TA
T
J(max) * TA
PD
+
PD
+
RqJA
RqJA
150oC * 60oC
124oCńW
150oC * 25oC
124oCńW
PD
+
PD
+
A helpful way of presenting the thermal performance of the
6-Pin SC-70 copper leadframe device is to compare it to the
traditional Alloy 42 version.
P
D + 726 mW
P
D + 1.01 W
As can be seen from the calculations above, the compact 6-pin
SC-70 copper leadframe LITTLE FOOT power MOSFET can
handle up to 1 W under the stated conditions.
Thermal performance for the 6-pin SC-70 measured as
junction-to-foot thermal resistance, where the “foot” is the
drain lead of the device at the bottom where it meets the PCB.
The junction-to-foot thermal resistance is typically 40_C/W in
the copper leadframe and 163_C/W in the Alloy 42 leadframe
— a four-fold improvement. This improved performance is
obtained by the enhanced thermal conductivity of copper over
Alloy 42.
Testing
To further aid comparison of copper and Alloy 42 leadframes,
Figure 5 illustrates single-channel 6-pin SC-70 thermal
performance on two different board sizes and two different pad
patterns. The measured steady-state values of RqJA for the
two leadframes are as follows:
LITTLE FOOT 6-PIN SC-70
Power Dissipation
Alloy 42
Copper
The typical RqJA for the single 6-pin SC-70 with copper
leadframe is 103_C/W steady-state, compared with 212_C/W
for the Alloy 42 version. The figures are based on the 1-inch2
FR4 test board. The following example shows how the thermal
resistance impacts power dissipation for the two different
leadframes at varying ambient temperatures.
1) Minimum recommended pad pattern on
the EVB board V (see Figure 3.
329.7_C/W
208.5_C/W
2
2) Industry standard 1-inch PCB with
211.8_C/W
103.5_C/W
maximum copper both sides.
The results indicate that designers can reduce thermal
resistance (RqJA) by 36% simply by using the copper
leadframe device rather than the Alloy 42 version. In this
example, a 121_C/W reduction was achieved without an
increase in board area. If increasing in board size is feasible,
a further 105_C/W reduction could be obtained by utilizing a
1-inch2 square PCB area.
ALLOY 42 LEADFRAME
Room Ambient 25 _C
Elevated Ambient 60 _C
T
J(max) * TA
RqJA
T
J(max) * TA
RqJA
PD
+
PD
+
The copper leadframe versions have the following suffix:
150oC * 25oC
212oCńW
150oC * 25oC
212oCńW
PD
+
PD
+
Single:
Dual:
Si14xxEDH
Si19xxEDH
P
D + 590 mW
P
D + 425 mW
Complementary: Si15xxEDH
Document Number: 71334
12-Dec-03
www.vishay.com
2
AN815
Vishay Siliconix
250
200
150
400
320
240
Alloy
42
Alloy
42
160
80
100
50
Copper
100
Copper
0
0
-5
-4
-3
-2
-1
-5
-4
-3
-2
-1
10
10
10
10
10
1
10
1000
10
10
10
10
10
1
10
100
1000
Time (Secs)
Time (Secs)
2
FIGURE 4.
Leadframe Comparison on EVB
FIGURE 5.
Leadframe Comparison on Alloy 42 1-inch PCB
Document Number: 71334
12-Dec-03
www.vishay.com
3
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SC-70: 6-Lead
0.067
(1.702)
0.016
0.026
0.010
(0.406)
(0.648)
(0.241)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
www.vishay.com
18
Document Number: 72602
Revision: 21-Jan-08
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
相关型号：
©2020 ICPDF网 联系我们和版权申明