SI1865DDL-T1-GE3 [VISHAY]
SPST,;
| 型号： | SI1865DDL-T1-GE3 |
| 厂家： | 
VISHAY |
| 描述： | SPST, |
| 文件： | 总10页 (文件大小：232K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si1865DDL
Vishay Siliconix
Load Switch with Level-Shift
FEATURES
PRODUCT SUMMARY
•
•
•
•
•
•
•
Low RDS(on) TrenchFET®
1.8 V to 12 V Input
VIN (VDS2) (V)
RDS(on) () Max.
ID (A)
1.1
0.200 at VIN = 4.5 V
0.300 at VIN = 2.5 V
0.508 at VIN = 1.8 V
1.5 V to 8 V Logic Level Control
1.8 to 12
0.9
Low Profile, Small Footprint SC70-6 Package
2000 V ESD Protection On Input Switch, VON/OFF
Adjustable Slew-Rate
0.7
DESCRIPTION
Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
The Si1865DDL includes a p- and n-channel MOSFET in
a single SC70-6 package. The low on-resistance p-channel
TrenchFET is tailored for use as a load switch. The
n-channel, with an external resistor, can be used as a level-
shift to drive the p-channel load-switch. The n-channel
MOSFET has internal ESD protection and can be driven by
logic signals as low as 1.5 V. The Si1865DDL operates
on supply lines from 1.8 V to 12 V, and can drive loads up to
1.1 A.
APPLICATIONS
•
•
•
Load Switch with Level-Shift
Slew-rate Control
Portable/Consumer Devices
APPLICATION CIRCUITS
Si1865DDL
14
IL = 1 A
V
ON/OFF = 3 V
Ci = 10 µF
o = 1 µF
2, 3
C
tr
4
10.5
7
V
OUT
V
IN
Q2
tf
R1
C1
6
5
6
td(off)
3.5
0
ON/OFF
LOAD
C
o
Q1
td(on)
C
i
0
2
4
6
8
10
1
R2 (kΩ)
R2
Switching Variation R2 at VIN = 2.5 V, R1 = 20 k
GND
R2
The Si1865DDL is ideally suited for high-side load switching
in portable applications. The integrated n-channel level-shift
device saves space by reducing external components. The
slew rate is set externally so that rise-times can be tailored to
different load types.
COMPONENTS
Typical 10 k to 1 Ma
R1
Pull-Up Resistor
Typical 0 to 100 ka
R2
Optional Slew-Rate Control
Optional Slew-Rate Control
C1
Typical 1000 pF
Note:
a. Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on.
Document Number: 62888
S13-2618-Rev. B, 23-Dec-13
For technical questions, contact: pmostechsupport@vishay.com
This document is subject to change without notice.
www.vishay.com
1
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si1865DDL
Vishay Siliconix
FUNCTIONAL BLOCK DIAGRAM
Si1865DDL
SC70-6
4
5
2, 3
6
D2
S2
Q2
Marking Code
R2
D2
D2
1
2
3
6
5
R1, C1
ON/OFF
S2
VD XXX
R1, C1
Lot Traceability
and Date Code
Part # Code
Q1
4
ON/OFF
Ordering Information: Si1865DDL-T1-GE3 (Lead (Pb)-free and Halogen-free)
1
R2
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)
A
Parameter
Symbol
Limit
12
Unit
VIN(VDS2
)
Input Voltage
On/Off Voltage
V
VON/OFF
8
Continuousa, b
Pulsedb, c
1.1
IL
Load Current
5
- 0.3
0.357
A
Continuous Intrinsic Diode Conductiona
Maximum Power Dissipationa
IS
PD
W
°C
kV
TJ, Tstg
ESD
Operating Junction and Storage Temperature Range
- 55 to 150
2
ESD Rating, MIL-STD-883D Human Body Model (100 pF, 1500 )
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
290
Maximum
350
Unit
Maximum Junction-to-Ambient (continuous current)a
RthJA
°C/W
RthJF
Maximum Junction-to-Foot (Q2)
250
300
SPECIFICATIONS (T = 25 °C, unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
Reverse Leakage Current
IFL
VIN = 12 V, VON/OFF = 0 V
IS = - 0.8 A
1
µA
V
VSD
Diode Forward Voltage
On Characteristics
Input Voltage Range
- 0.84
- 1.2
VIN
1.8
12
V
VON/OFF = 1.5 V, VIN = 4.5 V, ID = 1.1 A
ON/OFF = 1.5 V, VIN = 2.5 V, ID = 0.9 A
ON/OFF = 1.5 V, VIN = 1.8 V, ID = 0.2 A
0.165
0.250
0.376
0.200
0.300
0.508
RDS(on)
V
On-Resistance (P-Channel)
V
VIN-OUT 0.2 V, VIN = 5 V, VON/OFF = 1.5 V
VIN-OUT 0.3 V, VIN = 3 V, VON/OFF = 1.5 V
1
1
ID(on)
On-State (P-Channel) Drain-Current
A
Notes:
a. Surface mounted on FR4 board.
b. VIN = 12 V, VON/OFF = 8 V, TA = 25 °C.
c. Pulse test: pulse width 300 µs, duty cycle 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
For technical questions, contact: pmostechsupport@vishay.com
This document is subject to change without notice.
Document Number: 62888
S13-2618-Rev. B, 23-Dec-13
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si1865DDL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
5
1.8
VGS = 5 V thru 3 V
VON/OFF = 1.5 V to 8 V
TJ = 125oC
4
3
2
1
0
VGS =2.5V
1.4
0.9
0.5
0.0
VGS =2V
VGS =1.8V
TJ = 25oC
VGS = 1.5 V
0
1.5
3
4.5
6
0
0
0
0.5
1
1.5
2
3
8
IL (A)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
VDROP vs. IL at VIN = 4.5 V
1.5
1.2
0.9
0.6
0.3
0.0
0.5
0.4
0.3
0.2
0.1
0.0
VON/OFF = 1.5 V to 8 V
VON/OFF = 1.5 V to 8 V
TJ = 125oC
TJ = 125oC
TJ = 25oC
TJ = 25oC
1.8
0.6
1.2
2.4
0
0.2
0.4
0.6
0.8
1
IL (A)
IL (A)
VDROP vs. IL at VIN = 2.5 V
VDROP vs. IL at VIN = 1.8 V
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.3
0.2
0.1
0
IL = 1 A
VON/OFF = 1.5 V to 8 V
IL = 1 A
VGS = 4.5 V
V
ON/OFF = 1.5 V to 8 V
VGS = 2.5 V
TJ = 125 °C
TJ = 25 °C
VGS = 1.8 V
2
4
6
- 50 - 25
0
25
50
75
100 125 150
VIN - (V)
TJ - Junction Temperature (°C)
VDROP vs. VIN at IL = 1 A
Normalized On-Resistance vs. Junction Temperature
Document Number: 62888
S13-2618-Rev. B, 23-Dec-13
For technical questions, contact: pmostechsupport@vishay.com
This document is subject to change without notice.
www.vishay.com
3
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si1865DDL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.4
0.3
0.2
0.1
0
10
IL = 1 A
ON/OFF = 1.5 V to 8 V
V
TJ = 125 °C
TJ = 25 °C
TJ = 150 °C
TJ = 25 °C
1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Input Voltage
Source-Drain Diode Forward Voltage
18
13.5
9
14
10.5
7
IL = 1 A
IL = 1 A
ON/OFF = 3 V
Ci = 10 µF
o = 1 µF
V
ON/OFF = 3 V
Ci = 10 µF
o = 1 µF
V
C
C
tr
tf
tf
td(off)
td(off)
4.5
0
3.5
0
tr
td(on)
td(on)
0
2
4
6
8
10
0
2
4
6
8
10
R2 (kΩ)
R2 (kΩ)
Switching Variation R2 at VIN = 4.5 V, R1 = 20 k
Switching Variation R2 at VIN = 2.5 V, R1 = 20 k
20
15
10
5
150
IL = 1 A
ON/OFF = 3 V
Ci = 10 µF
V
tf
Co = 1 µF
120
90
60
30
0
tr
tf
td(off)
IL = 1 A
ON/OFF = 3 V
Ci = 10 µF
o = 1 µF
V
C
td(off)
tr
td(on)
td(on)
0
0
2
4
6
8
10
0
20
40
60
80
100
R2 (kΩ)
R2 (kΩ)
Switching Variation R2 at VIN = 1.8 V, R1 = 20 k
Switching Variation R2 at VIN = 4.5 V, R1 = 300 k
www.vishay.com
For technical questions, contact: pmostechsupport@vishay.com
Document Number: 62888
S13-2618-Rev. B, 23-Dec-13
4
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si1865DDL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
200
150
100
50
350
280
210
140
70
IL = 1 A
ON/OFF = 3 V
Ci = 10 µF
o = 1 µF
tr
V
C
IL = 1 A
ON/OFF = 3 V
V
tr
Ci = 10 µF
Co = 1 µF
tf
td(off)
tf
td(on)
td(off)
td(on)
0
0
0
20
40
60
80
100
0
20
40
60
80
100
R2 (kΩ)
R2 (kΩ)
Switching Variation R2 at VIN = 2.5 V, R1 = 300 k
Switching Variation R2 at VIN = 1.8 V, R1 = 300 k
10
Limited by RDS(on)
*
100 μs
1
1 ms
10 ms
0.1
100 ms
1 s
DC, 10 s
TA = 25 °C
Single Pulse
BVDSS Limited
10
0.01
0.1
1
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Foot
1
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
P
DM
t
1
0.05
0.02
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 130 °C/W
thJA
(t)
3. T - T = P
JM
Z
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
0.0001
0.001
0.01
0.1
1
10
100
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62888.
Document Number: 62888
S13-2618-Rev. B, 23-Dec-13
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
SCĆ70: 6ĆLEADS
MILLIMETERS
INCHES
Dim Min
Nom Max Min Nom Max
6
1
5
2
4
3
0.90
–
–
1.10
0.10
1.00
0.30
0.25
2.20
2.40
1.35
0.035
–
–
–
0.043
0.004
0.039
0.012
0.010
0.087
0.094
0.053
A
E
E
1
–
A1
0.80
–
0.031
0.006
0.004
0.071
0.071
0.045
–
A2
0.15
–
–
b
-B-
0.10
–
–
c
e
b
1.80
2.00
2.10
1.25
0.65BSC
1.30
0.20
7_Nom
0.079
0.083
0.049
0.026BSC
0.051
0.008
7_Nom
D
e
1
1.80
E
-A-
D
1.15
E1
c
e
1.20
1.40
0.30
0.047
0.004
0.055
0.012
A
e1
A
2
1
0.10
L
L
A
ECN: S-03946—Rev. B, 09-Jul-01
DWG: 5550
Document Number: 71154
06-Jul-01
www.vishay.com
1
AN814
Vishay Siliconix
Dual-Channel LITTLE FOOTR SC-70 6-Pin MOSFET
Recommended Pad Pattern and Thermal Performance
INTRODUCTION
This technical note discusses the pin-outs, package outlines,
applications for which this package is intended. For the 6-pin
device, increasing the pad patterns yields a reduction in
thermal resistance on the order of 20% when using a 1-inch
square with full copper on both sides of the printed circuit board
(PCB).
pad patterns, evaluation board layout, and thermal
performance for dual-channel LITTLE FOOT power
MOSFETs in the SC-70 package. These new Vishay Siliconix
devices are intended for small-signal applications where a
miniaturized package is needed and low levels of current
(around 250 mA) need to be switched, either directly or by
using a level shift configuration. Vishay provides these devices
with a range of on-resistance specifications in 6-pin versions.
The new 6-pin SC-70 package enables improved
on-resistance values and enhanced thermal performance.
EVALUATION BOARDS FOR THE DUAL
SC70-6
The 6-pin SC-70 evaluation board (EVB) measures 0.6 inches
by 0.5 inches. The copper pad traces are the same as
described in the previous section, Basic Pad Patterns. The
board allows interrogation from the outer pins to 6-pin DIP
connections permitting test sockets to be used in evaluation
testing.
PIN-OUT
Figure 1 shows the pin-out description and Pin 1 identification
for the dual-channel SC-70 device in the 6-pin configuration.
The thermal performance of the dual SC-70 has been
measured on the EVB with the results shown below. The
minimum recommended footprint on the evaluation board was
compared with the industry standard 1-inch square FR4 PCB
with copper on both sides of the board.
SOT-363
SC-70 (6-LEADS)
S
1
G
1
D
2
1
2
3
6
5
D
1
THERMAL PERFORMANCE
G
2
Junction-to-Foot Thermal Resistance
(the Package Performance)
4
S
2
Thermal performance for the dual SC-70 6-pin package
measured as junction-to-foot thermal resistance is 300_C/W
typical, 350_C/W maximum. The “foot” is the drain lead of the
device as it connects with the body. Note that these numbers
are somewhat higher than other LITTLE FOOT devices due to
the limited thermal performance of the Alloy 42 lead-frame
compared with a standard copper lead-frame.
Top View
FIGURE 1.
For package dimensions see outline drawing SC-70 (6-Leads)
(http://www.vishay.com/doc?71154)
Junction-to-Ambient Thermal Resistance
(dependent on PCB size)
The typical RθJA for the dual 6-pin SC-70 is 400_C/W steady
state. Maximum ratings are 460_C/W for the dual. All figures
based on the 1-inch square FR4 test board. The following
example shows how the thermal resistance impacts power
dissipation for the dual 6-pin SC-70 package at two different
ambient temperatures.
BASIC PAD PATTERNS
See Application Note 826, Recommended Minimum Pad
Patterns With Outline Drawing Access for Vishay Siliconix
MOSFETs, (http://www.vishay.com/doc?72286) for the 6-pin
SC-70. This basic pad pattern is sufficient for the low-power
Document Number: 71237
12-Dec-03
www.vishay.com
1
AN814
Vishay Siliconix
500
400
300
SC-70 (6-PIN)
Dual EVB
Room Ambient 25 _C
Elevated Ambient 60 _C
T
J(max) * TA
T
J(max) * TA
PD
+
PD
+
RqJA
RqJA
150oC * 60oC
400oCńW
150oC * 25oC
400oCńW
PD
+
PD
+
200
100
P
D + 312 mW
PD + 225 mW
NOTE: Although they are intended for low-power applications,
devices in the 6-pin SC-70 will handle power dissipation in
excess of 0.2 W.
1” Square FR4 PCB
0
-5
-4
-3
-2
-1
10
10
10
10
10
Time (Secs)
1
10
100
1000
Testing
FIGURE 2.
Comparison of Dual SC70-6 on EVB and 1”
Square FR4 PCB.
To aid comparison further, Figure 2 illustrates the dual-channel
SC-70 thermal performance on two different board sizes and
two different pad patterns. The results display the thermal
performance out to steady state. The measured steady state
values of RθJA for the dual 6-pin SC-70 are as follows:
The results show that if the board area can be increased and
maximum copper traces are added, the thermal resistance
reduction is limited to 20%. This fact confirms that the power
dissipation is restricted with the package size and the Alloy 42
leadframe.
LITTLE FOOT SC-70 (6-PIN)
1) Minimum recommended pad pattern (see
Figure 2) on the EVB of 0.5 inches x
0.6 inches.
ASSOCIATED DOCUMENT
518_C/W
413_C/W
Single-Channel LITTLE FOOT SC-70 6-Pin MOSFET Copper
Leadframe Version, REcommended Pad Pattern and Thermal
Performance, AN815, (http://www.vishay.com/doc?71334).
2) Industry standard 1” square PCB with
maximum copper both sides.
Document Number: 71237
12-Dec-03
www.vishay.com
2
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SC-70: 6-Lead
0.067
(1.702)
0.016
0.026
0.010
(0.406)
(0.648)
(0.241)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
www.vishay.com
18
Document Number: 72602
Revision: 21-Jan-08
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
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