SI1970DH_08 [VISHAY]
Dual N-Channel 30-V (D-S) MOSFET; 双N通道30 -V （D -S ）的MOSFET
| 型号： | SI1970DH_08 |
| 厂家： | 
VISHAY |
| 描述： | Dual N-Channel 30-V (D-S) MOSFET |
| 文件： | 总7页 (文件大小：121K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si1970DH
Vishay Siliconix
New Product
Dual N-Channel 30-V (D-S) MOSFET
FEATURES
•
PRODUCT SUMMARY
TrenchFET® Power MOSFET
I
D (A)a
VDS (V)
rDS(on) (Ω)
Qg (Typ)
1.3a
1.3a
0.225 at VGS = 4.5 V
0.345 at VGS = 2.5 V
APPLICATIONS
30
1.15 nC
RoHS
COMPLIANT
•
Load switch for portable applications
SOT-363
SC-70 (6-LEADS)
D
1
D
2
S
1
G
1
D
2
1
2
3
6
D
1
Marking Code
G
1
G
2
5
4
G
2
CD XX
Lot Traceability
and Date Code
S
2
S
1
S
2
Part # Code
N-Channel MOSFET
N-Channel MOSFET
Top View
Ordering Information: Si1970DH-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
30
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
V
VGS
12
1.3a
TC = 25 °C
1.3a
1.3a
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Drain Current (TJ = 150 °C)
ID
1.1
A
IDM
IS
Pulsed Drain Current
4
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
1.0
Continuous Source-Drain Diode Current
0.61c
1.25
0.8
0.74b, c
0.47b, c
- 55 to 150
260
PD
Maximum Power Dissipation
W
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Symbol
RthJA
Typical
130
Maximum
170
Unit
t ≤ 5 sec
°C/W
RthJF
Steady State
80
100
Maximum Junction-to-Foot (Drain)
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 Board.
c. t = 5 sec.
d. Maximum under Steady State conditions is 220 °C/W.
Document Number: 74343
S-62441-Rev. A, 27-Nov-06
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1
Si1970DH
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
VGS = 0 V, ID = 250 µA
ID = 250 µA
Drain-Source Breakdown Voltage
30
V
V
DS Temperature Coefficient
25
mV/°C
VGS(th) Temperature Coefficient
- 3.2
VDS = VGS, ID = 250 µA
Gate-Source Threshold Voltage
Gate-Source Leakage
0.6
4
1.6
100
1
V
IGSS
VDS = 0 V, VGS
=
12 V
ns
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55 °C
VDS ≤ 5 V, VGS = 4.5 V
IDSS
ID(on)
rDS(on)
gfs
Zero Gate Voltage Drain Current
On-State Drain Currenta
µA
A
10
VGS = 4.5 V, ID = 1.2 A
0.185
0.285
2.5
0.225
0.345
Drain-Source On-State Resistancea
Forward Transconductancea
Ω
S
V
GS = 2.5 V, ID = 0.29 A
VDS = 15 V, ID = 1.2 A
Dynamicb
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
95
17
9
VDS = 15 V, VGS = 0 V, f = 1 MHz
VDS = 15 V, VGS = 10 V, ID = 1.4 A
VDS = 10 V, VGS = 4.5 V, ID = 1.4 A
f = 1 MHz
pF
2.5
1.15
0.4
0.3
4
3.8
1.7
Qg
Total Gate Charge
nC
Qgs
Qgd
Rg
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Ω
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tr
Turn-On Delay Time
9
15
30
25
25
10
15
15
12
Rise Time
20
15
15
5
V
DD = 15 V, RL = 13.6 Ω
ID ≅ 1.1 A, VGEN = 4.5 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
ns
Turn-on Delay Time
Rise Time
10
10
6
VDD = 15 V, RL = 13.6 Ω
ID ≅ 1.1 A, VGEN = 10 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
IS
ISM
VSD
trr
TC = 25 °C
1
4
A
IS = 1.1 A, VGS = 0 V
0.85
20
1.2
40
20
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Qrr
ta
10
IF = 1.1 A, di/dt = 100 A/µs, TJ = 25 °C
16.5
3.5
ns
tb
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 74343
S-62441-Rev. A, 27-Nov-06
Si1970DH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
4
2.0
1.6
1.2
0.8
0.4
0.0
V
GS
= 5 V thru 3.5 V
V
GS
= 3 V
3
2
1
0
V
GS
= 2.5 V
T
C
= 25 °C
V
GS
= 2 V
T
C
= 125 °C
V
GS
= 1.5 V
T
C
= - 55 °C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.6
0.5
0.4
0.3
0.2
0.1
150
120
90
60
30
0
C
iss
V
GS
= 2.5 V
C
oss
V
GS
= 4.5 V
C
rss
0
1
2
3
4
0
5
10
15
20
25
30
I
D
- Drain Current (A)
V
DS
- Drain-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
10
8
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I
D
= 1.4 A
V
GS
= 4.5 V, I = 1.4 A
D
V
= 15 V
DS
6
V
= 24 V
DS
4
V
GS
= 2.5 V, I = 0.3 A
D
2
0
0.0
0.5
1.0
1.5
2.0
2.5
- 50 - 25
0
25
50
75
100 125 150
Q
g
- Total Gate Charge (nC)
T - Junction Temperature (°C)
J
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 74343
S-62441-Rev. A, 27-Nov-06
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Si1970DH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.8
0.6
0.4
0.2
0.0
10
I
= 1.4 A
D
T
= 150 °C
J
T
= 125 °C
A
T
= 25 °C
J
1.0
T
A
= 25 °C
4
0.1
0.0
0
1
2
3
5
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
- Gate-to-Source Voltage (V)
V
SD
-
Source-to-Drain Voltage (V)
Forward Diode Voltage
On-Resistance vs. Gate-Source Voltage
1.5
1.3
1.1
0.9
0.7
0.5
5
4
I
D
= 250 µA
3
2
1
0
- 50 - 25
0
25
50
75
100 125 150
0.01
0.1
1
10
100
600
T
J
- Temperature (°C)
Time (sec)
Threshold Voltage
Single Pulse Power
10
r
*Limited by
DS(on)
100 µs
1
1 ms
10 ms
0.1
100 ms
1 s
T
= 25 °C
A
10 s
DC
Single Pulse
BVDSS Limited
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
*V
GS
minimum V at which r
is specified
GS
DS(on)
Safe Operating Area, Junction-to-Ambient
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Document Number: 74343
S-62441-Rev. A, 27-Nov-06
Si1970DH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2.0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.6
Package Limited
1.2
0.8
0.4
0.0
0
25
50
75
100
125
150
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
- Case Temperature (°C)
C
Current Derating*
Power Derating
*The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissi-
pation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 170 °C/W
0.02
thJA
(t)
3. T - T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
600
Document Number: 74343
S-62441-Rev. A, 27-Nov-06
www.vishay.com
5
Si1970DH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?74343.
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Document Number: 74343
S-62441-Rev. A, 27-Nov-06
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Document Number: 91000
Revision: 18-Jul-08
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