SI2309CDS-T1-GE3 [VISHAY]
P-Channel 60-V (D-S) MOSFET; P通道60 -V （D -S ）的MOSFET
| 型号： | SI2309CDS-T1-GE3 |
| 厂家： | 
VISHAY |
| 描述： | P-Channel 60-V (D-S) MOSFET |
| 文件： | 总6页 (文件大小：108K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New Product
Si2309CDS
Vishay Siliconix
P-Channel 60-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free Option Available
TrenchFET® Power MOSFET
VDS (V)
RDS(on) (Ω)
Qg (Typ.)
I
D (A)d
•
0.345 at VGS = - 10 V
0.450 at VGS = - 4.5 V
- 1.6
- 1.4
- 60
2.7 nC
APPLICATIONS
Load Switch
•
TO-236
(SOT-23)
G
S
1
3
2
D
S
G
Top View
Si2309CDS (N9)*
* Marking Code
D
Ordering Information: Si2309CDS-T1-E3 (Lead (Pb)-free)
Si2309CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
- 60
20
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
V
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
- 1.6
- 1.3
Continuous Drain Current (TJ = 150 °C)a, b
ID
- 1.2a, b
- 1.0a, b
- 8
A
IDM
IAS
Pulsed Drain Current (10 µs Pulse Width)
Single Pulse Avalanche Current
- 5
L = 0.1 mH
TC = 25 °C
TA = 25 °C
TC = 25 °C
- 1.4
IS
Continuous Source-Drain Diode Current
- 0.9a, b
1.7
T
C = 70 °C
A = 25 °C
1.1
PD
W
Maximum Power Dissipation
1.0a, b
T
0.67a, b
- 55 to 150
260
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)c
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, c
Symbol
Typical
92
Maximum
120
Unit
RthJA
t ≤ 5 s
°C/W
RthJF
Maximum Junction-to-Foot (Drain)
Steady State
58
73
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. Maximum under Steady State conditions is 166 °C/W.
d. When TC = 25 °C.
Document Number: 68980
S-82584-Rev. A, 27-Oct-08
www.vishay.com
1
New Product
Si2309CDS
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
VGS = 0 V, ID = - 250 µA
ID = - 250 µA
Drain-Source Breakdown Voltage
- 60
V
V
DS Temperature Coefficient
- 65
4.5
mV/°C
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS = VGS, ID = - 250 µA
- 1
- 6
- 3
- 100
- 1
V
IGSS
VDS = 0 V, VGS
=
20 V
nA
VDS = - 60 V, VGS = 0 V
DS = - 60 V, VGS = 0 V, TJ = 55 °C
VDS ≤ 5 V, VGS = - 10 V
IDSS
ID(on)
RDS(on)
gfs
Zero Gate Voltage Drain Current
On-State Drain Currenta
µA
A
V
- 10
VGS = - 10 V, ID = - 1.25 A
0.285
0.360
2.8
0.345
0.450
Drain-Source On-State Resistancea
Ω
S
VGS = - 4.5 V, ID = - 1.0 A
Forward Transconductancea
VDS = - 10 V, ID = - 1.0 A
Dynamicb
Ciss
Coss
Crss
Qg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
210
28
20
2.7
0.8
1.2
7
VDS = - 30 V, VGS = 0 V, f = 1 MHz
pF
4.1
Qgs
Qgd
Rg
VDS = - 30 V, VGS = - 4.5 V, ID = - 1.25 A
f = 1 MHz
nC
Ω
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
40
35
15
10
5
60
55
25
20
10
20
25
20
V
DD = - 30 V, RL = 30 Ω
ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
ns
Turn-On Delay Time
Rise Time
10
15
10
V
DD = - 30 V, RL = 30 Ω
ID ≅ - 1 A, VGEN = - 10 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
IS
ISM
VSD
trr
TC = 25 °C
- 1.4
- 8
A
IS = - 0.75 A, VGS = 0 V
Body Diode Voltage
- 0.8
30
- 1.2
60
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
ns
nC
Qrr
ta
33
60
IF = - 1.25 A, dI/dt = 100 A/µs, TJ = 25 °C
18
ns
tb
Reverse Recovery Rise Time
12
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 68980
S-82584-Rev. A, 27-Oct-08
New Product
Si2309CDS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2.0
1.5
1.0
0.5
0.0
8
V
= 10 thru 5 V
GS
6
4
2
0
V
= 4 V
GS
T
= 25 °C
C
V
GS
= 3 V
T
= 125 °C
2
C
T
C
= - 55 °C
4
0
1
3
5
0
1
2
3
4
5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.8
0.6
0.4
0.2
0.0
350
280
210
140
70
C
iss
V
GS
= 4.5 V
V
GS
= 10 V
C
oss
C
rss
0
0
2
4
6
8
0
15
30
45
60
I
- Drain Current (A)
D
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
2.0
1.7
1.4
1.1
0.8
0.5
I
= 1.25 A
I
= 1.25 A
D
D
V
DS
= 30 V
8
6
4
2
0
V
GS
= 10 V
V
DS
= 15 V
V
GS
= 4.5 V
V
DS
= 45 V
0
1
2
3
4
5
- 50 - 25
0
25
50
75
100 125 150
T
J
- Junction Temperature (°C)
Q
g
- Total Gate Charge (nC)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 68980
S-82584-Rev. A, 27-Oct-08
www.vishay.com
3
New Product
Si2309CDS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
2.0
1.6
1.2
0.8
0.4
0.0
I
= 1.25 A
D
10
T
J
= 150 °C
T
= 25 °C
J
1
0.1
T
T
= 125 °C
T
J
= - 50 °C
J
0.01
0.001
= 25 °C
J
0.0
0.3
0.6
0.9
1.2
1.5
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
V
SD
- Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.6
0.4
8
6
4
2
0
I
= 250 µA
D
T
A
= 25 °C
I
= 1 mA
D
0.2
0.0
- 0.2
- 0.4
- 50 - 25
0
25
50
75
100 125 150
0.01
0.1
1
10
100
1000
T
J
- Temperature (°C)
Time (s)
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
10
10 µs
Limited by R
DS(on)*
1
100 µs
1 ms
10 ms
0.1
100 ms
T
= 25 °C
A
1 s, 10 s
100 s, DC
Single Pulse
0.01
100
0.1
1
10
V
DS
- Drain-to-Source Voltage (V)
* V > minimum V at which R is specified
DS(on)
GS
GS
Safe Operating Area, Junction-to-Ambient
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Document Number: 68980
S-82584-Rev. A, 27-Oct-08
New Product
Si2309CDS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
0.05
P
DM
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 166 °C/W
thJA
(t)
3. T - T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
100
1000
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
P
DM
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 73 °C/W
thJA
(t)
3. T - T = P
Z
JM
A
DM thJA
4. Surface Mounted
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
10
1
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?68980.
Document Number: 68980
S-82584-Rev. A, 27-Oct-08
www.vishay.com
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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1
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