SI2393DS-T1-GE3 [VISHAY]
Small Signal Field-Effect Transistor,;
| 型号： | SI2393DS-T1-GE3 |
| 厂家： | 
VISHAY |
| 描述： | Small Signal Field-Effect Transistor, |
| 文件： | 总7页 (文件大小：144K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si2393DS
Vishay Siliconix
www.vishay.com
P-Channel 30 V (D-S) MOSFET
FEATURES
• TrenchFET® Gen IV p-channel power MOSFET
SOT-23 (TO-236)
• 100 % Rg and UIS tested
D
3
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
2
S
APPLICATIONS
• Load switch
S
1
G
• Circuit protection
Top View
• Motor drive control
Marking code: G6
G
PRODUCT SUMMARY
VDS (V)
RDS(on) max. () at VGS = 10 V
-30
0.0227
0.0330
8.2
D
P-Channel MOSFET
R
DS(on) max. () at VGS = 4.5 V
Qg typ. (nC)
D (A) a, e
I
-7.5
Configuration
Single
ORDERING INFORMATION
Package
SOT-23
Lead (Pb)-free and halogen-free
Si2393DS-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
-30
UNIT
Drain-source voltage
Gate-source voltage
VDS
V
VGS
-20 / +16
-7.5 e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
-6.9
Continuous drain current (TJ = 150 °C)
ID
-6.1 b, c
-4.8 b, c
-50
A
Pulsed drain current (t = 100 μs)
IDM
IS
TC = 25 °C
-2.1
-1.1 b, c
Continuous source-drain diode current
TA = 25 °C
T
C = 25 °C
C = 70 °C
2.5
T
1.6
Maximum power dissipation
PD
W
TA = 25 °C
TA = 70 °C
1.3 b, c
0.8 b, c
-55 to +150
Operating junction and storage temperature range
TJ, Tstg
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum junction-to-ambient b
SYMBOL
RthJA
TYPICAL
MAXIMUM
UNIT
t 5 s
75
40
100
50
°C/W
Maximum junction-to-case (drain)
Notes
Steady state
RthJF
a. Based on TC = 25 °C
b. Surface mounted on 1" x 1" FR4 board
c. t = 5 s
d. Maximum under steady state conditions is 166 °C/W
e. Package limited
S19-0382-Rev. A, 29-Apr-2019
Document Number: 70132
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si2393DS
Vishay Siliconix
www.vishay.com
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
VDS
VDS/TJ
VGS(th)/TJ
VGS(th)
VGS = 0 V, ID = -250 μA
ID = -250 μA
-30
-
-
V
VDS temperature coefficient
-
-
-24.7
-
-
mV/°C
VGS(th) temperature coefficient
Gate-source threshold voltage
Gate-source leakage
ID = -250 μA
5.7
VDS = VGS, ID = 250 μA
VDS = 0 V, VGS = -20 V / +16 V
VDS = -30 V, VGS = 0 V
VDS = -30 V, VGS = 0 V, TJ = 70 °C
VDS -10 V, VGS = -10 V
VGS = -10 V, ID = -5 A
-1
-
-
-2.2
100
-1
V
IGSS
-
nA
-
-
Zero gate voltage drain current
On-state drain current a
IDSS
ID(on)
RDS(on)
gfs
μA
A
-
-
-
-15
-
-10
-
0.0189
0.0264
10
0.0227
0.0330
-
Drain-source on-state resistance a
S
V
GS = -4.5 V, ID = -3 A
-
Forward transconductance a
Dynamic b
VDS = -15 V, ID = -5 A
-
Input capacitance
Ciss
Coss
Crss
-
-
980
440
55
-
-
Output capacitance
Reverse transfer capacitance
VDS = -15 V, VGS = 0 V, f = 1 MHz
VDS = -15 V, VGS = -10 V, ID = -6.1 A
VDS = -15 V, VGS = -4.5 V, ID =-6.1 A
f = 1 MHz
pF
-
-
-
16.8
8.2
3.6
2.8
18.3
14
25.2
12.3
-
Total gate charge
Qg
-
nC
Gate-source charge
Gate-drain charge
Qgs
Qgd
Rg
-
-
-
Gate resistance
3.6
-
36.6
28
16
96
64
45
170
68
80
Turn-on delay time
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Rise time
-
8
VDD = -15 V, RL = 2.5 , ID -4.8 A,
V
GEN = -10 V, Rg = 1
Turn-off delay time
-
48
Fall time
-
32
ns
Turn-on delay time
-
30
Rise time
-
85
VDD = -15 V, RL = 2.5 , ID -4.8 A,
VGEN = -4.5 V, Rg = 1
Turn-off delay time
-
34
Fall time
-
40
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
Pulse diode forward current
Body diode voltage
TC = 25 °C
IS
ISM
VSD
trr
-
-
-
-
-
-
-
-
-
-2.1
-50
-1.2
42
16
-
A
IS = -4.8 A, VGS = 0 V
-0.8
21
8
V
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
Reverse recovery rise time
ns
nC
Qrr
ta
IF = -4.8 A, di/dt = 100 A/μs,
TJ = 25 °C
8.5
12.5
ns
tb
-
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S19-0382-Rev. A, 29-Apr-2019
Document Number: 70132
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si2393DS
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
50
40
30
20
10
0
10000
1000
100
70
56
42
28
14
0
10000
VGS = 10 V thru 5 V
VGS = 4 V
TC = -55 °C
1000
TC = 125 °C
100
10
TC = 25 °C
VGS = 3 V
10
0
1
2
3
4
5
0
1.5
3
4.5
6
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
Axis Title
Axis Title
0.060
0.045
0.030
0.015
0
10000
1000
100
10 000
1000
100
10000
1000
100
Ciss
Coss
VGS = 4.5 V
VGS = 10 V
Crss
10
10
10
0
5
10
15
20
25
30
0
10
20
30
40
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
Axis Title
Axis Title
10
8
10000
1000
100
1.5
1.3
1.1
0.9
0.7
10000
1000
100
ID = 6.1 A
VGS = 10 V, 5 A
6
VGS = 4.5 V, 3 A
4
VDS = 8 V, 15 V, 24 V
2
10
0
10
-50 -25
0
25
50
75 100 125 150
0
3
6
9
12
15
18
TJ - Junction Temperature (°C)
Qg - Total Gate Charge (nC)
Gate Charge
On-Resistance vs. Junction Temperature
S19-0382-Rev. A, 29-Apr-2019
Document Number: 70132
3
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si2393DS
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
2.1
1.9
1.7
1.5
1.3
1.1
0.9
10000
100
10
10000
1000
100
ID = 250 μA
TJ = 150 °C
1000
100
TJ = 25 °C
1
0.1
0.01
10
10
0
0.2
0.4
0.6
0.8
1.0
1.2
-50 -25
0
25
50
75 100 125 150
VSD - Source-to-Drain Voltage (V)
TJ - Junction Temperature (°C)
Source-Drain Diode Forward Voltage
Threshold Voltage
Axis Title
10
0.06
0.05
0.04
0.03
0.02
0.01
0
10000
1000
100
ID = 5 A
8
6
4
2
0
TJ = 125 °C
TJ = 25 °C
T
= 25 °C
A
10
0
2
4
6
8
10
0.01
0.1
1
Time (s)
10
100
1000
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
Axis Title
100
10000
IDM limited
10
1
100 μs
1000
1 ms
10 ms
a
Limited by RDS(on)
0.1
100 ms
10 s, 1 s
100
DC
0.01
TA = 25 °C,
single pulse
BVDSS limited
1
0.001
10
0.01
0.1
10
100
VDS - Drain-to-Source Voltage (V)
Safe Operating Area, Junction-to-Ambient
Note
a. VGS > minimum VGS at which RDS(on) is specified
S19-0382-Rev. A, 29-Apr-2019
Document Number: 70132
4
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si2393DS
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
10
10000
1000
100
8
6
4
2
0
10
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Current Derating a
3
2.5
2
1.0
0.8
0.6
0.4
0.2
0
1.5
1
0.5
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
TC - Case Temperature (°C)
TA - Ambient Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
S19-0382-Rev. A, 29-Apr-2019
Document Number: 70132
5
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si2393DS
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
P
DM
0.05
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R
= 166 °C/W
thJA
(t)
= P
Z
DM thJA
3. T - T
A
JM
4. Surface Mounted
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
100
1000
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70132.
S19-0382-Rev. A, 29-Apr-2019
Document Number: 70132
6
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2019
Document Number: 91000
1
相关型号：
©2020 ICPDF网 联系我们和版权申明