SI3471DV-T1-GE3 [VISHAY]
Small Signal Field-Effect Transistor, 5.1A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, TSOP-6;
| 型号： | SI3471DV-T1-GE3 |
| 厂家： | 
VISHAY |
| 描述： | Small Signal Field-Effect Transistor, 5.1A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, TSOP-6 开关 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：101K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si3471DV
Vishay Siliconix
P-Channel 12-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
Definition
VDS (V)
RDS(on) (Ω)
ID (A)
- 6.8
- 6.0
- 5.2
0.031 at VGS = - 4.5 V
0.040 at VGS = - 2.5 V
0.053 at VGS = - 1.8 V
•
•
TrenchFET® Power MOSFET: 1.8 V Rated
Compliant to RoHS Directive 2002/95/EC
- 12
APPLICATIONS
•
Load Switch
•
PA Switch
(4) S
TSOP-6
Top View
1
2
3
6
5
(3) G
3 mm
4
2.85 mm
(1, 2, 5, 6) D
Ordering Information: Si3471DV-T1-E3 (Lead (Pb)-free)
Si3471DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
5 s
Steady State
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
- 12
8
V
VGS
TA = 25 °C
TA = 85 °C
- 6.8
- 4.9
- 5.1
- 3.7
- 20
Continuous Drain Current (TJ = 150 °C)a
ID
A
IDM
IS
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)a
- 1.7
2.0
- 0.9
1.1
TA = 25 °C
Maximum Power Dissipationa
PD
W
TA = 85 °C
1.0
0.6
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
55
Maximum
62.5
Unit
t ≤ 5 s
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
RthJA
Steady State
Steady State
90
110
°C/W
RthJF
30
36
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 72104
S09-2277-Rev. C, 02-Nov-09
www.vishay.com
1
Si3471DV
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VGS(th)
IGSS
VDS = VGS, ID = - 250 µA
Gate Threshold Voltage
- 0.40
- 1
V
VDS = 0 V, VGS
=
8 V
Gate-Body Leakage
100
- 1
nA
VDS = - 12 V, VGS = 0 V
DS = - 12 V, VGS = 0 V, TJ = 85 °C
VDS = - 5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 6.8 A
IDSS
Zero Gate Voltage Drain Current
µA
A
V
- 5
On-State Drain Currenta
ID(on)
- 20
0.025
0.032
0.041
20
0.031
0.040
0.053
Drain-Source On-State Resistancea
RDS(on)
V
V
GS = - 2.5 V, ID = - 6 A
GS = - 1.8 V, ID = - 3 A
Ω
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
gfs
VDS = - 5 V, ID = - 6.8 A
IS = - 1.7 A, VGS = 0 V
S
V
VSD
- 0.7
- 1.2
33
Qg
Qgs
Qgd
td(on)
tr
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
18
2.3
4.6
21
V
DS = - 6 V, VGS = - 4.5 V, ID = - 6.8 A
nC
ns
33
75
50
V
DD = - 6 V, RL = 6 Ω
ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω
td(off)
tf
Turn-Off Delay Time
Fall Time
125
110
50
190
165
80
trr
IF = - 1.7 A, dI/dt = 100 A/µs
Source-Drain Reverse Recovery Time
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
16
12
8
20
16
12
8
V
GS
= 5 V thru 2 V
1.5 V
T
= 125 °C
C
4
4
25 °C
1 V
- 55 °C
0
0
0
1
2
3
4
5
0.0
0.5
1.0
1.5
2.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
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2
Document Number: 72104
S09-2277-Rev. C, 02-Nov-09
Si3471DV
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.10
0.08
0.06
0.04
0.02
0.00
2500
2000
1500
1000
500
0
C
iss
V
GS
= 1.8 V
V
= 2.5 V
GS
C
oss
C
rss
V
GS
= 4.5 V
0
4
8
12
16
20
0
3
6
9
12
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
1.4
1.3
1.2
1.1
1.0
0.9
0.8
5
4
3
2
1
0
V
I
= 4.5 V
V
I
= 6 V
GS
DS
= 6.8 A
= 6.8 A
D
D
- 50 - 25
0
25
50
75
100 125 150
0
5
10
15
20
T
- Junction Temperature (°C)
Q
- Total Gate Charge (nC)
J
g
Gate Charge
On-Resistance vs. Junction Temperature
20
10
0.10
0.08
0.06
0.04
0.02
0.00
I
D
= 6.8 A
T
= 150 °C
J
I
D
= 3 A
T
= 25 °C
J
1
0
1
2
3
4
5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
GS
- Gate-to-Source Voltage (V)
V
SD
- Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 72104
S09-2277-Rev. C, 02-Nov-09
www.vishay.com
3
Si3471DV
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.4
40
32
0.3
I
D
= 250 µA
0.2
0.1
24
16
T
A
= 25 °C
0.0
8
0
- 0.1
- 0.2
-2
-1
- 50 - 25
0
25
50
75
100 125 150
10
10
1
10
100
600
T
- Temperature (°C)
Time (s)
J
Threshold Voltage
Single Pulse Power
1000
Limitedby R
*
DS(on)
I
Limited
DM
100
10
P(t) = 0.001
P(t) = 0.01
I
D(on)
Limited
P(t) = 0.1
P(t) = 1
P(t) = 10
1
T
= 25 °C
C
DC
Single Pulse
BVDSSLimited
1
0.1
0.1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V > minimum V at which R is specified
DS(on)
GS
GS
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 90 °C/W
thJA
Single Pulse
(t)
3. T
- T = P Z
A DM thJA
JM
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
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4
Document Number: 72104
S09-2277-Rev. C, 02-Nov-09
Si3471DV
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
10
1
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72104.
Document Number: 72104
S09-2277-Rev. C, 02-Nov-09
www.vishay.com
5
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
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