SI3493DV [VISHAY]
P-Channel 20-V (D-S) MOSFET; P通道20 -V （D -S ）的MOSFET
| 型号： | SI3493DV |
| 厂家： | 
VISHAY |
| 描述： | P-Channel 20-V (D-S) MOSFET |
| 文件： | 总5页 (文件大小：61K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si3493DV
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFET: 1.8-V Rated
VDS (V)
rDS(on) (W)
ID (A)
Qg (Typ)
D Ultra-Low On-Resistance
APPLICATIONS
0.027 @ V = −4.5 V
−7
GS
D Load Switch
D PA Switch
−20
0.035 @ V = −2.5
V
V
−6.2
−5.2
21
GS
0.048 @ V = −1.8
GS
D Battery Switch
TSOP-6
Top View
(4) S
1
2
3
6
(3) G
3 mm
5
4
(1, 2, 5, 6) D
2.85 mm
P-Channel MOSFET
Ordering Information: Si3493DV-T1
Si3493DV-T1—E3 (Lead (Pb)-Free)
Marking Code:
93xxx
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
5 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
−20
DS
V
V
GS
"8
T
= 25_C
= 85_C
−5.3
−3.9
−7
A
a
Continuous Drain Current (T = 150_C)
I
D
J
T
A
−3.6
A
Pulsed Drain Current
I
DM
−20
a
Continuous Diode Current (Diode Conduction)
I
−1.7
2.0
−0.9
1.1
S
T
= 25_C
= 85_C
A
a
Maximum Power Dissipation
P
W
D
T
A
1.0
0.6
Operating Junction and Storage Temperature Range
T , T
−55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 5 sec
Steady State
Steady State
45
90
25
62.5
110
30
a
Maximum Junction-to-Ambient
R
R
thJA
_C/W
Maximum Junction-to-Foot (Drain)
thJF
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71936
S-41796—Rev. C, 04-Oct-04
www.vishay.com
1
Si3493DV
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = −250 mA
−0.40
−1
V
GS(th)
DS
GS
D
I
V
= 0 V, V = "8 V
"100
nA
GSS
DS
GS
V
= −20 V, V = 0 V
−1
−5
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= −20 V, V = 0 V, T = 85_C
GS
J
a
On-State Drain Current
I
V
DS
= −5 V, V = −4.5 V
−20
A
D(on)
GS
0.022
0.027
V
V
= −4.5 V, I = −7 A
GS
D
a
Drain-Source On-State Resistance
r
W
= −2.5 V, I = −6.2 A
0.029
0.039
0.035
0.048
DS(on)
GS
D
V
= −1.8 V, I = −3 A
GS
D
a
Forward Transconductance
g
25
S
V
V
= −5 V, I = −7 A
fs
DS
D
a
Diode Forward Voltage
V
SD
I
S
= −1.7 A, V = 0 V
−0.7
−1.2
GS
Dynamicb
Total Gate Charge
Q
32
21
g
nC
ns
V
= −10 V, V = −4.5 V, I = −7 A
GS D
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q
Q
2.6
6
DS
gs
gd
t
20
40
125
85
64
30
60
d(on)
t
r
V
= −10 V, R = 10 W
L
GEN g
DD
I
^ −1 A, V
= −4.5 V, R = 6 W
Turn-Off Delay Time
Fall Time
t
190
130
90
D
d(off)
t
f
Source-Drain Reverse Recovery Time
t
rr
I = −1.7 A, di/dt = 100 A/ms
F
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
20
16
12
8
20
16
12
8
V
GS
= 5 thru 2 V
1.5 V
T
= 125_C
C
4
4
25_C
−55_C
1 V
0
0
0
1
2
3
4
5
0.0
0.4
0.8
1.2
1.6
2.0
V
DS
− Drain-to-Source Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Document Number: 71936
S-41796—Rev. C, 04-Oct-04
www.vishay.com
2
Si3493DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
3000
2500
2000
1500
1000
500
0.10
0.08
0.06
C
iss
V
GS
= 1.8 V
0.04
0.02
0.00
V
V
= 2.5 V
= 4.5 V
GS
C
oss
GS
C
rss
0
0
4
8
12
16
20
0
4
8
12
16
20
I
D
− Drain Current (A)
V
DS
− Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
5
4
3
2
1
0
1.6
1.4
1.2
1.0
0.8
0.6
V
D
= 10 V
V
= 4.5 V
DS
GS
I
= 7 A
I = 7 A
D
0
4
8
12
16
20
24
−50 −25
0
25
50
75
100 125 150
Q
− Total Gate Charge (nC)
T
− Junction Temperature (_C)
g
J
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.10
0.08
0.06
0.04
0.02
0.00
20
10
I
D
= 7 A
T
= 150_C
J
T
= 25_C
J
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
V
SD
− Source-to-Drain Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Document Number: 71936
S-41796—Rev. C, 04-Oct-04
www.vishay.com
3
Si3493DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.4
40
32
0.3
I
D
= 250 mA
0.2
0.1
24
16
T
A
= 25_C
0.0
8
0
−0.1
−0.2
−2
−1
−50 −25
0
25
50
75
100 125 150
10
10
1
10
100
600
T
− Temperature (_C)
Time (sec)
J
Safe Operating Area
100
* r
DS(on)
Limited
I
Limited
DM
10
1
P(t) = 0.001
P(t) = 0.01
I
D(on)
Limited
P(t) = 0.1
P(t) = 1
P(t) = 10
0.1
T
= 25_C
C
Single Pulse
dc
BV
DSS
Limited
0.01
0.1
1
10
100
V
− Drain-to-Source Voltage (V)
DS
*V u minimum V at which r is specified
DS(on)
GS
GS
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 360_C/W
thJA
(t)
3. T − T = P Z
DM thJA
JM
A
Single Pulse
4. Surface Mounted
0.01
−4
−3
−2
−1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 71936
S-41796—Rev. C, 04-Oct-04
www.vishay.com
4
Si3493DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
−4
−3
−2
−1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology
and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?71936.
Document Number: 71936
S-41796—Rev. C, 04-Oct-04
www.vishay.com
5
相关型号：
SI3552DV-E3
TRANSISTOR 2500 mA, 30 V, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TSOP-6, FET General Purpose Small Signal
VISHAY
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