SI3861BDV [VISHAY]
Load Switch with Level-Shift; 与电平转换负载开关
| 型号： | SI3861BDV |
| 厂家： | 
VISHAY |
| 描述： | Load Switch with Level-Shift |
| 文件： | 总6页 (文件大小：118K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si3861BDV
Vishay Siliconix
New Product
Load Switch with Level-Shift
FEATURES
PRODUCT SUMMARY
D 4.5-V Rated
VDS2 (V)
rDS(on) (W)
ID (A)
D ESD Protected: 3000 V
D 105-mW Low rDS(on) TrenchFETr
0.075 @ V = 10 V
"2.3
"1.9
"1.7
IN
RoHS
COMPLIANT
D 4.5 to 20-V Input
0.120 @ V = 5.0 V
IN
4.5 to 20
D 1.5 to 8 -V Logic Level Control
D Low Profile, Small Footprint TSOP-6 Package
0.145 @ V = 4.5 V
IN
D 3000-V ESD Protection On Input Switch,
VON/OFF
D Adjustable Slew-Rate
DESCRIPTION
The Si3861BDV includes a p- and n-channel MOSFET in a
single TSORP-6 package. The low on-resistance p-channel
TrenchFET is tailored for use as a load switch. The
n-channel, with an external resistor, can be used as a
level-shift to drive the p-channel load-switch. The n-channel
MOSFET has internal ESD protection and can be driven by
logic signals as low as 1.5-V. The Si3861DV operates on
supply lines from 4.5 to 20-V, and can drive loads up to 2.3 A.
APPLICATION CIRCUITS
Switching Variation
R2 @ V = 5 V, R1 = 20 kW
Si3861BDV
IN
10
t
f
2, 3
4
V
8
6
4
2
0
OUT
V
IN
Q2
Q1
t
d(off)
R1
C1
6
5
6
t
r
ON/OFF
t
LOAD
d(on)
C
o
I
= 1 A
ON/OFF
L
V
= 3 V
C = 10 mF
C
i
= 1 mF
o
C
i
1
0
2
4
6
8
10
12
R2
R2 (kW)
GND
Note: For R2 switching variations with other V /R1
IN
R2
combinations See Typical Characteristics
The Si3861BDV is ideally suited for high-side load switching
in portable applications. The integrated n-channel level-shift
device saves space by reducing external components. The
slew rate is set externally so that rise-times can be tailored to
different load types.
COMPONENTS
R1
R2
C1
Pull-Up Resistor
Typical 10 kW to 1 mW*
Typical 0 to 100 kW*
Typical 1000 pF
Optional Slew-Rate Control
Optional Slew-Rate Control
*Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on.
Document Number: 73343
S-51015—Rev. A, 23-May-05
www.vishay.com
1
Si3861BDV
Vishay Siliconix
New Product
FUNCTIONAL BLOCK DIAGRAM
Si3861BDV
TSOP-6
Top View
4
2, 3
6
D2
S2
Q2
R2
D2
D2
R1, C1
ON/OFF
S2
1
2
3
6
5
R1, C1
Q1
5
ON/OFF
4
Ordering Information: Si3861BDV-T1—E3 (Lead (Pb)-Free)
1
R2
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
Limit
Unit
Input Voltage
V
20
IN
V
ON/OFF Voltage
V
8
"2.3
"4
ON/OFF
a, b
Continuous
Load Current
I
L
b, c
Pulsed
A
a
Continuous Intrinsic Diode Conduction
I
S
−1
a
Maximum Power Dissipation
P
0.83
−55 to 150
3
W
_C
kV
D
Operating Junction and Storage Temperature Range
T , T
J
stg
ESD Rating, MIL-STD-883D Human Body Model (100 pF, 1500 W)
ESD
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
a
Maximum Junction-to-Ambient (continuous current)
R
120
60
150
80
thJA
thJF
C/W
Maximum Junction-to-Foot (Q2)
R
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF Characteristics
Reverse Leakage Current
Diode Forward Voltage
I
V
IN
= 30 V, V = 0 V
ON/OFF
1
mA
FL
V
I
S
= −1 A
−0.8
−1
V
SD
ON Characteristics
Input Voltage Range
V
IN
4.5
20
V
V
= 10 V
0.060
0.096
0.115
0.075
0.120
0.145
IN
V
= 1.5 V
ON/OFF
V
IN
= 5.0 V
= 4.5 V
On-Resistance (p-channel) @ 1 A
On-State (p-channel) Drain-Current
r
W
DS(on)
I
= 1 A
D
V
IN
V
v 0.2 V, V = 10 V, V
ON/OFF
v 0.3 V, V = 5 V, V
IN ON/OFF
= 1.5 V
= 1.5 V
1
1
IN-OUT
IN
I
A
D(on)
V
IN-OUT
Notes
a. Surface Mounted on FR4 Board.
b.
V
= 12, V
= 8 V, T = 25_C.
IN
ON/OFF
A
c. Pulse test: pulse width v300 ms, duty cycle v2%.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
Document Number: 73343
S-51015—Rev. A, 23-May-05
www.vishay.com
2
Si3861BDV
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
V
vs. I @ V = 10 V
V
vs. I @ V = 5 V
DROP
L
IN
DROP
L
IN
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
V
= 1.5 to 8 V
V
= 1.5 to 8 V
ON/OFF
ON/OFF
T
= 125_C
J
T
= 125_C
J
T
= 25_C
J
T
= 25_C
J
0
1
2
3
4
5
6
0
0
0
1
2
3
4
5
6
I
− (A)
I − (A)
L
L
V
vs. I @ V = 4.5 V
V
vs. V @ I = 1 A
DROP
L
IN
DROP
IN
L
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.2
1.0
0.8
0.6
0.4
0.2
0.0
I
= 1 A
ON/OFF
L
V
= 1.5 to 8 V
ON/OFF
V
= 1.5 to 8 V
T
J
= 125_C
T
= 25_C
J
T
= 125_C
J
T
= 25_C
J
2
4
6
8
10
12
0
1
2
3
4
5
6
I
L
− (A)
V
(V)
IN
V
Variance vs. Junction Temperature
On-Resistance vs. Input Voltage
DROP
0.08
0.06
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
I
= 1 A
ON/OFF
I
= 1 A
ON/OFF
L
V
L
= 1.5 to 8 V
V
= 1.5 to 8 V
0.04
V
= 5 V
IN
0.02
V
= 10 V
IN
T
= 125_C
J
0.00
−0.02
−0.04
T
= 25_C
J
−50 −25
0
T
25
50
75
100 125 150
2
4
6
8
10
12
− Junction Temperature (_C)
V
(V)
J
IN
Document Number: 73343
S-51015—Rev. A, 23-May-05
www.vishay.com
3
Si3861BDV
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized On-Resistance
Switching Variation
R2 @ V = 10 V, R1 = 20 kW
vs. Junction Temperature
IN
18
16
14
12
10
8
1.8
I
= 1 A
ON/OFF
L
V
= 3 V
t
f
1.6
V
IN
= 10 V
C = 10 mF
C
i
= 1 mF
o
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
t
d(off)
V
= 5 V
IN
t
d(on)
6
t
r
I
= 1 A
ON/OFF
4
L
V
= 1.5 to 8 V
2
0
0
0
0
2
4
6
8
10
12
−100
−50
0
50
100
150
200
T
− Junction Temperature (_C)
Switching Variation
R2 @ V = 5 V, R1 = 20 kW
R2 (kW)
J
Switching Variation
R2 @ V = 4.5 V, R1 = 20 kW
IN
IN
10
8
14
12
10
8
t
f
I
= 1 A
ON/OFF
L
V
= 3 V
C = 10 mF
i
o
C
= 1 mF
t
d(off)
t
r
6
t
f
t
r
6
t
d(off)
4
t
t
d(on)
d(on)
4
I
= 1 A
ON/OFF
L
2
V
= 3 V
2
C = 10 mF
C
i
o
= 1 mF
0
0
0
2
4
6
8
10
12
2
4
6
8
10
12
R2 (kW)
R2 (kW)
Switching Variation
R2 @ V = 10 V, R1 = 300 kW
Switching Variation
R2 @ V = 5 V, R1 = 300 kW
IN
IN
120
100
80
60
40
20
0
250
200
150
100
50
t
d(off)
t
d(off)
I
= 1 A
ON/OFF
t
f
L
V
= 3 V
C = 10 mF
i
o
C
= 1 mF
t
f
I
= 1 A
ON/OFF
L
V
= 3 V
C = 10 mF
i
o
t
d(on)
C
= 1 mF
t
r
t
r
t
d(on)
0
20
40
60
80
100
120
0
20
40
60
80
100
120
R2 (kW)
R2 (kW)
Document Number: 73343
S-51015—Rev. A, 23-May-05
www.vishay.com
4
Si3861BDV
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Switching Variation
R2 @ V = 4.5 V, R1 = 300 kW
IN
120
100
80
60
40
20
0
t
f
t
d(off)
I
= 1 A
ON/OFF
L
V
= 3 V
C = 10 mF
i
o
t
r
C
= 1 mF
t
d(on)
0
20
40
60
R2 (kW)
80
100
120
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 150_C/W
thJA
(t)
3. T − T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
−4
−3
−2
−1
10
10
10
10
1
10
100
600
Square Wave Pulse Dureation (sec)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?73343.
Document Number: 73343
S-51015—Rev. A, 23-May-05
www.vishay.com
5
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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