SI4160DY [VISHAY]
N-Channel 30-V (D-S) MOSFET; N通道30 -V （D -S ）的MOSFET
| 型号： | SI4160DY |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 30-V (D-S) MOSFET |
| 文件： | 总7页 (文件大小：141K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New Product
Si4160DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
•
•
•
Halogen-free According to IEC 61249-2-21
VDS (V)
RDS(on) (Ω)
Qg (Typ.)
I
D (A)a
25.4
TrenchFET® Power MOSFET
100 % Rg Tested
0.0049 at VGS = 10 V
0.0063 at VGS = 4.5 V
30
16.9 nC
100 % UIS Tested
22.4
APPLICATIONS
•
Notebook
- Vcore low side
- DC/DC
SO-8
D
S
D
D
D
D
1
2
3
4
8
7
6
5
S
S
G
G
Top View
S
Ordering Information: Si4160DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
VDS
Limit
30
Unit
Drain-Source Voltage
Gate-Source Voltage
V
VGS
20
T
C = 25 °C
TC = 70 °C
A = 25 °C
25.4
20.2
16.8b, c
13.4b, c
70
Continuous Drain Current (TJ = 150 °C)
ID
T
TA = 70 °C
A
IDM
IS
Pulsed Drain Current
TC = 25 °C
5.1
2.2b, c
30
Continuous Source-Drain Diode Current
T
A = 25 °C
L = 0.1 mH
C = 25 °C
TC = 70 °C
A = 25 °C
TA = 70 °C
IAS
Single Pulse Avalanche Current
Avalanche Energy
EAS
mJ
W
45
T
5.7
3.6
PD
Maximum Power Dissipation
2.5b, c
1.6b, c
T
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
Symbol
RthJA
RthJF
Typical
39
Maximum
Unit
t ≤ 10 s
Steady State
50
22
°C/W
18
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
Document Number: 69069
S-83092-Rev. A, 29-Dec-08
www.vishay.com
1
New Product
Si4160DY
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
VGS = 0 V, ID = 250 µA
ID = 250 µA
Drain-Source Breakdown Voltage
30
V
V
DS Temperature Coefficient
29
mV/°C
VGS(th) Temperature Coefficient
- 5.5
VDS = VGS , ID = 250 µA
Gate-Source Threshold Voltage
Gate-Source Leakage
1.0
30
2.4
100
1
V
IGSS
VDS = 0 V, VGS
=
20 V
nA
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55 °C
VDS ≥ 5 V, VGS = 10 V
IDSS
ID(on)
RDS(on)
gfs
Zero Gate Voltage Drain Current
On-State Drain Currenta
µA
A
10
VGS = 10 V, ID = 15 A
0.004
0.0049
Drain-Source On-State Resistancea
Forward Transconductancea
Ω
S
VGS = 4.5 V, ID = 10 A
0.0051 0.0063
60
VDS = 15 V, ID = 15 A
Dynamicb
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
2071
406
V
DS = 15 V, VGS = 0 V, f = 1 MHz
pF
168
V
DS = 15 V, VGS = 10 V, ID = 10 A
36
16.8
5.1
5.2
0.85
25
54
Qg
Total Gate Charge
25.5
nC
Qgs
Qgd
Rg
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
VDS = 15 V, VGS = 4.5 V, ID = 10 A
f = 1 MHz
0.2
1.7
45
30
50
24
20
18
45
18
Ω
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
16
V
DD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
28
12
ns
Turn-On Delay Time
Rise Time
10
9
V
DD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
25
9
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
ISM
VSD
trr
TC = 25 °C
IS = 3 A
5.1
70
A
Pulse Diode Forward Currenta
Body Diode Voltage
0.73
19
10
10
9
1.1
38
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Qrr
ta
20
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
ns
tb
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 69069
S-83092-Rev. A, 29-Dec-08
New Product
Si4160DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
70
10
8
V
GS
= 10 thru 4 V
56
42
28
14
0
6
V
GS
= 3 V
4
T
C
= 25 °C
2
T
C
= 125 °C
1
T
C
= - 55 °C
3
0
0.0
0.5
1.0
1.5
2.0
2.5
0
2
4
5
V
GS
- Gate-to-Source Voltage (V)
V
DS
- Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
2800
2240
1680
1120
560
0.0060
0.0055
0.0050
0.0045
0.0040
0.0035
V
= 4.5 V
GS
C
iss
V
GS
= 10 V
C
oss
C
rss
0
0
6
12
18
24
30
0
14
28
42
56
70
I
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
D
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I
= 10 A
I
= 15 A
D
D
8
V
= 10 V
DS
V
GS
= 10 V
6
V
DS
= 15 V
V
DS
= 20 V
4
V
GS
= 4.5 V
2
0
0
8
16
24
32
40
- 50 - 25
0
25
50
75
100 125 150
T
J
- Junction Temperature (°C)
Q
g
- Total Gate Charge (nC)
On-Resistance vs. Junction Temperature
Gate Charge
Document Number: 69069
S-83092-Rev. A, 29-Dec-08
www.vishay.com
3
New Product
Si4160DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.020
100
10
1
I
= 15 A
D
T
J
= 150 °C
0.015
0.010
0.005
0.000
T
J
= 25 °C
0.1
0.01
T
= 125 °C
= 25 °C
J
T
J
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
6
7
8
9
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.4
0.2
170
136
102
68
0.0
- 0.2
- 0.4
- 0.6
- 0.8
I
= 5 mA
D
I
= 250 µA
D
34
0
- 50 - 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
T
J
- Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by R
*
DS(on)
10
1 ms
10 ms
1
100 ms
1 s
0.1
10 s
DC
T
= 25 °C
A
BVDSS Limited
Single Pulse
0.01
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V > minimum V at which R is specified
DS(on)
GS
GS
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 69069
S-83092-Rev. A, 29-Dec-08
New Product
Si4160DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
24
18
12
6
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
7.0
5.6
4.2
2.8
1.4
0.0
1.80
1.44
1.08
0.72
0.36
0.00
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
A
- Ambient Temperature (°C)
Power, Junction-to-Foot
Power, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 69069
S-83092-Rev. A, 29-Dec-08
www.vishay.com
5
New Product
Si4160DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
0.2
0.1
0.1
Notes:
P
DM
0.05
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R
= 85 °C/W
thJA
(t)
3. T - T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
100
1000
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69069.
www.vishay.com
6
Document Number: 69069
S-83092-Rev. A, 29-Dec-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
相关型号：
SI4160DY-T1-GE3
Small Signal Field-Effect Transistor, 16.8A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8
VISHAY
SI4166DY-T1-GE3
Small Signal Field-Effect Transistor, 20.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8
VISHAY
SI4170DY-T1-GE3
Small Signal Field-Effect Transistor, 30A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOIC-8
VISHAY
©2020 ICPDF网 联系我们和版权申明