SI4226DY-T1-GE3 [VISHAY]
MOSFET N-CH DUAL 25V 8A 8-SOIC;
| 型号： | SI4226DY-T1-GE3 |
| 厂家： | 
VISHAY |
| 描述： | MOSFET N-CH DUAL 25V 8A 8-SOIC 开关 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：107K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New Product
Si4226DY
Vishay Siliconix
Dual N-Channel 25-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
VDS (V)
RDS(on) (Ω)
Qg (Typ.)
I
D (A)a, e
Available
0.0195 at VGS = 4.5 V
0.026 at VGS = 2.5 V
•
•
TrenchFET® Power MOSFET
100 % Rg and UIS Tested
8
8
25
11
APPLICATIONS
Synchronous Buck Converter
•
D
1
D
2
SO-8
S
D
1
1
2
3
4
8
7
6
5
1
1
2
2
G
S
D
1
G
G
2
1
D
2
G
D
2
Top View
Ordering Information: Si4226DY-T1-E3 (Lead (Pb)-free)
Si4226DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
S
2
1
N-Channel MOSFET
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
VGS
Limit
25
Unit
V
12
8e
T
C = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
7.7
Continuous Drain Current (TJ = 150 °C)
ID
7.5b, c
6b, c
30
2.6
1.7b, c
30
IDM
IS
A
Pulsed Drain Current (10 µs Pulse Width)
Source-Drain Current Diode Current
TC = 25 °C
TA = 25 °C
ISM
IAS
Pulsed Source-Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
10
L = 0.1 mH
EAS
mJ
W
5
T
C = 25 °C
TC = 70 °C
A = 25 °C
TA = 70 °C
3.2
2.1
2b, c
1.28b, c
PD
Maximum Power Dissipation
T
TJ, Tstg
°C
Operating Junction and Storage Temperature Range
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RthJA
RthJF
Typical
50
Maximum
62.5
Unit
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
°C/W
30
38
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 110 °C/W.
e. Package limited.
Document Number: 69980
S09-0392-Rev. B, 09-Mar-09
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1
New Product
Si4226DY
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
VGS = 0 V, ID = 250 µA
ID = 250 µA
Drain-Source Breakdown Voltage
25
V
V
DS Temperature Coefficient
26
- 4
mV/°C
VGS(th) Temperature Coefficient
Gate Threshold Voltage
Gate Body Leakage
VDS = VGS , ID = 250 µA
0.6
20
2.0
100
1
V
IGSS
VDS = 0 V, VGS
=
12 V
nA
VDS = 25 V, VGS = 0 V
DS = 25 V, VGS = 0 V, TJ = 55 °C
VDS = 5 V, VGS = 10 V
VGS = 4.5 V, ID = 7 A
IDSS
ID(on)
RDS(on)
gfs
Zero Gate Voltage Drain Current
On-State Drain Currentb
µA
A
V
10
0.0155
0.020
40
0.0195
0.026
Drain-Source On-State Resistanceb
Ω
S
VGS = 2.5 V, ID = 5 A
Forward Transconductanceb
VDS = 15 V, ID = 7 A
Dynamica
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
1255
185
90
24
11
2
N-Channel
VDS = 15 V, VGS = 0 V, f = 1 MHz
pF
V
DS = 15 V, VGS = 10 V, ID = 8 A
N-Channel
36
17
Qg
Total Gate Charge
nC
Qgs
Qgd
Rg
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
V
DS = 15 V, VGS = 4.5 V, ID = 8 A
2.5
1.4
8
f = 1 MHz
0.3
2.8
16
18
40
16
25
20
50
16
Ω
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
N-Channel
DD = 15 V, RL = 3 Ω
ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω
9
V
Turn-Off Delay Time
Fall Time
24
8
ns
Turn-On Delay Time
Rise Time
14
10
30
8
N-Channel
DD = 15 V, RL = 3 Ω
ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω
V
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
ISM
VSD
trr
TC = 25 °C
IS = 2 A
2.6
30
A
Pulse Diode Forward Currenta
Body Diode Voltage
0.73
25
1.2
50
28
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Qrr
ta
14
N-Channel
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
12
ns
tb
13
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 69980
S09-0392-Rev. B, 09-Mar-09
New Product
Si4226DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
5
4
3
2
1
0
V
= 5 V thru 2.5 V
GS
32
24
16
8
V
GS
= 2 V
T
C
= 125 °C
T
C
= 25 °C
1.0
T
C
= - 55 °C
2.0
0
0
0
0
1
2
3
4
5
0.0
0.5
1.5
2.5
V
- Drain-to-Source Voltage (V)
V
- Gate-to-Source Voltage (V)
DS
GS
Output Characteristics
Transfer Characteristics
1700
1360
1020
680
340
0
0.030
0.026
0.022
0.018
0.014
0.010
C
iss
V
= 2.5 V
= 4.5 V
GS
V
GS
C
oss
C
rss
0
5
10
15
20
25
8
16
24
32
40
V
- Drain-to-Source Voltage (V)
I
- Drain Current (A)
DS
D
On-Resistance vs. Drain Current
Capacitance
10
8
1.7
1.5
1.3
1.1
0.9
0.7
0.5
I
= 7 A
V
= 4.5 V
D
V
= 10 V
GS
DS
I
= 8 A
D
6
V
= 15 V
DS
V
DS
= 20 V
V
= 2.5 V
GS
4
2
0
- 50
- 25
0
25
50
75
100
125
150
5
10
15
20
25
T
J
- Junction Temperature (°C)
Q
- Total Gate Charge (nC)
g
On-Resistance vs. Junction Temperature
Gate Charge
Document Number: 69980
S09-0392-Rev. B, 09-Mar-09
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New Product
Si4226DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.10
0.08
0.06
0.04
0.02
0.00
I
= 7 A
D
T
= 150 °C
J
10
1
T
= 25 °C
J
0.1
0.01
T
J
= 125 °C
T
J
= 25 °C
4
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
5
V
- Source-to-Drain Voltage (V)
V
- Gate-to-Source Voltage (V)
SD
GS
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.4
0.2
60
48
36
24
12
0
0.0
I
= 5 mA
- 0.2
- 0.4
- 0.6
D
I
= 250 µA
D
0.001
0.01
0.1
1
10
- 50 - 25
0
25
50
75
100 125 150
Time (s)
T
- Junction Temperature (°C)
J
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
100
10
1
Limited by R
*
DS(on)
1 ms
10 ms
100 ms
1 s
10 s
DC
0.1
T
= 25 °C
BVDSS
Limited
A
Single Pulse
0.01
0.1
1
10
100
V
- Drain-to-Source Voltage (V)
DS
* V > minimum V at which R is specified
DS
GS
DS(on)
Safe Operating Area
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Document Number: 69980
S09-0392-Rev. B, 09-Mar-09
New Product
Si4226DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
11
9
7
4
2
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Current Derating*
4.0
3.2
2.4
1.6
0.8
0.0
1.5
1.2
0.9
0.6
0.3
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
TC - Case Temperature (°C)
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
Power, Junction-to-Foot
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 69980
S09-0392-Rev. B, 09-Mar-09
www.vishay.com
5
New Product
Si4226DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
0.2
0.1
0.1
Notes:
P
DM
0.05
t
1
t
2
0.02
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 110 °C/W
thJA
(t)
3. T - T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
100
1000
10
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69980.
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Document Number: 69980
S09-0392-Rev. B, 09-Mar-09
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Document Number: 91000
Revision: 18-Jul-08
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