SI4230DY-T1-GE3 [VISHAY]
Dual N-Channel 30-V (D-S) MOSFET; 双N通道30 -V （D -S ）的MOSFET
| 型号： | SI4230DY-T1-GE3 |
| 厂家： | 
VISHAY |
| 描述： | Dual N-Channel 30-V (D-S) MOSFET |
| 文件： | 总10页 (文件大小：261K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si4230DY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free
TrenchFET® Power MOSFET
I
D (A)a, e
VDS (V)
RDS(on) (Ω)
Qg (Typ.)
•
• 100 % Rg and UIS Tested
0.0205 at VGS = 10 V
0.026 at VGS = 4.5 V
8
8
30
7.3
APPLICATIONS
•
Low Current DC/DC
•
Notebook PC
- System Power
D
1
D
2
SO-8
S
G
S
D
1
1
2
3
4
8
7
6
5
1
1
2
2
D
1
G
G
2
1
D
2
G
D
2
Top View
S
1
S
2
N-Channel MOSFET
N-Channel MOSFET
Ordering Information: Si4230DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
Limit
30
Unit
V
VGS
20
8e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
7.5
Continuous Drain Current (TJ = 150 °C)
ID
7.3b, c
5.8b, c
30
2.6
1.7b, c
30
IDM
IS
A
Pulsed Drain Current (10 µs Pulse Width)
Source-Drain Current Diode Current
TC = 25 °C
TA = 25 °C
ISM
IAS
Pulsed Source-Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
10
L = 0.1 mH
EAS
mJ
W
5
T
C = 25 °C
3.2
TC = 70 °C
TA = 25 °C
TA = 70 °C
2.1
2b, c
1.28b, c
PD
Maximum Power Dissipation
TJ, Tstg
°C
Operating Junction and Storage Temperature Range
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RthJA
RthJF
Typical
50
Maximum
62.5
Unit
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
°C/W
30
38
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 110 °C/W.
e. Package limited.
Document Number: 68983
S-82660-Rev. A, 03-Nov-08
www.vishay.com
1
Si4230DY
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
VGS = 0 V, ID = 250 µA
ID = 250 µA
Drain-Source Breakdown Voltage
30
V
V
DS Temperature Coefficient
32
- 6
mV/°C
VGS(th) Temperature Coefficient
Gate Threshold Voltage
Gate Body Leakage
VDS = VGS , ID = 250 µA
1.0
20
3.0
100
1
V
IGSS
VDS = 0 V, VGS
=
20 V
nA
VDS = 30 V, VGS = 0 V
DS = 30 V, VGS = 0 V, TJ = 55 °C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 8 A
IDSS
ID(on)
RDS(on)
gfs
Zero Gate Voltage Drain Current
On-State Drain Currentb
µA
A
V
10
0.0172
0.0205
29
0.0205
0.026
Drain-Source On-State Resistanceb
Ω
S
VGS = 4.5 V, ID = 5 A
Forward Transconductanceb
VDS = 15 V, ID = 8 A
Dynamica
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
950
155
65
N-Channel
VDS = 15 V, VGS = 0 V, f = 1 MHz
pF
V
DS = 15 V, VGS = 10 V, ID = 8 A
N-Channel
16.5
7.3
2.7
2.1
1.2
17
25
11
Qg
Total Gate Charge
nC
Qgs
Qgd
Rg
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
V
DS = 15 V, VGS = 4.5 V, ID = 8 A
f = 1 MHz
0.2
2.4
35
24
35
20
18
20
35
16
Ω
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
N-Channel
12
V
DD = 15 V, RL = 3 Ω
Turn-Off Delay Time
Fall Time
18
ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω
10
ns
Turn-On Delay Time
Rise Time
9
N-Channel
11
V
DD = 15 V, RL = 3 Ω
Turn-Off Delay Time
Fall Time
18
ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω
8
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
ISM
VSD
trr
TC = 25 °C
IS = 1 A
2.6
30
A
Pulse Diode Forward Currenta
Body Diode Voltage
0.74
17
9
1.2
34
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Qrr
ta
18
N-Channel
IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C
10
7
ns
tb
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 68983
S-82660-Rev. A, 03-Nov-08
Si4230DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
5
4
3
2
1
0
V
GS
= 10 thru 4 V
24
18
12
6
T
C
= 25 °C
V
GS
= 3 V
T
= 125 °C
2
C
T
C
= - 55 °C
4
0
0.0
0.5
1.0
1.5
2.0
2.5
0
1
3
5
V
GS
- Gate-to-Source Voltage (V)
V
DS
- Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.024
0.022
0.020
0.018
0.016
0.014
1200
960
720
480
240
0
C
iss
V
V
= 4.5 V
GS
= 10 V
GS
C
oss
C
rss
0
6
12
18
24
30
0
5
10
15
20
25
30
I
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
D
On-Resistance vs. Drain Current
Capacitance
1.8
1.6
1.4
1.2
1.0
0.8
0.6
10
8
I
= 8 A
I
= 8 A
D
D
V
GS
= 10 V
V
DS
= 10 V
6
V
= 15 V
DS
V
GS
= 4.5 V
4
V
DS
= 20 V
2
0
- 50 - 25
0
T
25
50
75
100 125 150
0.0
3.6
7.2
10.8
14.4
18.0
- Junction Temperature (°C)
Q
g
- Total Gate Charge (nC)
J
On-Resistance vs. Junction Temperature
Gate Charge
Document Number: 68983
S-82660-Rev. A, 03-Nov-08
www.vishay.com
3
Si4230DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.10
0.08
0.06
0.04
0.02
0.00
I
= 8 A
D
T
J
= 150 °C
10
1
T
J
= 25 °C
0.1
0.01
T
= 125 °C
= 25 °C
J
T
J
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
6
7
8
9
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.4
0.2
60
48
36
24
12
0
0.0
- 0.2
- 0.4
- 0.6
- 0.8
I
= 5 mA
D
I
= 250 µA
D
- 50 - 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
Time (s)
T
J
- Temperature (°C)
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
100
Limited by R
*
DS(on)
10
1
1 ms
10 ms
100 ms
1 s
10 s
DC
0.1
T
= 25 °C
A
Single Pulse
BVDSS Limited
0.01
0.1
1
10
100
* V > minimum V at which R is specified
DS(on)
V
DS
- Drain-to-Source Voltage (V)
GS
GS
Safe Operating Area
www.vishay.com
4
Document Number: 68983
S-82660-Rev. A, 03-Nov-08
Si4230DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
11.0
8.8
6.6
4.4
2.2
0.0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
1.5
1.2
0.9
0.6
0.3
0.0
4.0
3.2
2.4
1.6
0.8
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
A
- Ambient Temperature (°C)
Power, Junction-to-Foot
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 68983
S-82660-Rev. A, 03-Nov-08
www.vishay.com
5
Si4230DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
0.2
0.1
0.1
Notes:
P
DM
0.05
t
1
t
2
t
t
1
2
0.02
1. Duty Cycle, D =
2. Per Unit Base = R
= 110 °C/W
thJA
(t)
3. T - T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
100
1000
10
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
10
0.01
-4
-3
-2
-1
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?68983.
www.vishay.com
6
Document Number: 68983
S-82660-Rev. A, 03-Nov-08
Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
2
5
4
E
H
1
3
S
h x 45
D
C
0.25 mm (Gage Plane)
A
All Leads
0.101 mm
q
e
B
A
1
L
0.004"
MILLIMETERS
Max
INCHES
DIM
A
Min
Min
Max
1.35
0.10
0.35
0.19
4.80
3.80
1.75
0.20
0.51
0.25
5.00
4.00
0.053
0.004
0.014
0.0075
0.189
0.150
0.069
0.008
0.020
0.010
0.196
0.157
A1
B
C
D
E
e
1.27 BSC
0.050 BSC
H
h
5.80
0.25
0.50
0°
6.20
0.50
0.93
8°
0.228
0.010
0.020
0°
0.244
0.020
0.037
8°
L
q
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
www.vishay.com
1
VISHAY SILICONIX
TrenchFET® Power MOSFETs
Application Note 808
Mounting LITTLE FOOT®, SO-8 Power MOSFETs
Wharton McDaniel
0.288
7.3
Surface-mounted LITTLE FOOT power MOSFETs use
integrated circuit and small-signal packages which have
0.050
1.27
0.088
2.25
been been modified to provide the heat transfer capabilities
required by power devices. Leadframe materials and
design, molding compounds, and die attach materials have
been changed, while the footprint of the packages remains
the same.
0.088
2.25
0.027
0.69
0.078
1.98
0.2
5.07
See Application Note 826, Recommended Minimum Pad
Patterns With Outline Drawing Access for Vishay Siliconix
MOSFETs, (http://www.vishay.com/ppg?72286), for the
basis of the pad design for a LITTLE FOOT SO-8 power
MOSFET. In converting this recommended minimum pad
to the pad set for a power MOSFET, designers must make
two connections: an electrical connection and a thermal
connection, to draw heat away from the package.
Figure 2. Dual MOSFET SO-8 Pad Pattern
With Copper Spreading
The minimum recommended pad patterns for the
single-MOSFET SO-8 with copper spreading (Figure 1) and
dual-MOSFET SO-8 with copper spreading (Figure 2) show
the starting point for utilizing the board area available for the
heat-spreading copper. To create this pattern, a plane of
copper overlies the drain pins. The copper plane connects
the drain pins electrically, but more importantly provides
planar copper to draw heat from the drain leads and start the
process of spreading the heat so it can be dissipated into the
ambient air. These patterns use all the available area
underneath the body for this purpose.
In the case of the SO-8 package, the thermal connections
are very simple. Pins 5, 6, 7, and 8 are the drain of the
MOSFET for a single MOSFET package and are connected
together. In a dual package, pins 5 and 6 are one drain, and
pins 7 and 8 are the other drain. For a small-signal device or
integrated circuit, typical connections would be made with
traces that are 0.020 inches wide. Since the drain pins serve
the additional function of providing the thermal connection
to the package, this level of connection is inadequate. The
total cross section of the copper may be adequate to carry
the current required for the application, but it presents a
large thermal impedance. Also, heat spreads in a circular
fashion from the heat source. In this case the drain pins are
the heat sources when looking at heat spread on the PC
board.
Since surface-mounted packages are small, and reflow
soldering is the most common way in which these are
affixed to the PC board, “thermal” connections from the
planar copper to the pads have not been used. Even if
additional planar copper area is used, there should be no
problems in the soldering process. The actual solder
connections are defined by the solder mask openings. By
combining the basic footprint with the copper plane on the
drain pins, the solder mask generation occurs automatically.
0.288
7.3
0.050
1.27
0.196
5.0
A final item to keep in mind is the width of the power traces.
The absolute minimum power trace width must be
determined by the amount of current it has to carry. For
thermal reasons, this minimum width should be at least
0.020 inches. The use of wide traces connected to the drain
plane provides a low impedance path for heat to move away
from the device.
0.027
0.69
0.078
1.98
0.2
5.07
Figure 1. Single MOSFET SO-8 Pad
Pattern With Copper Spreading
Document Number: 70740
Revision: 18-Jun-07
www.vishay.com
1
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
(0.711)
0.022
0.050
(0.559)
(1.270)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
www.vishay.com
22
Document Number: 72606
Revision: 21-Jan-08
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
相关型号：
SI4300DY-T1
TRANSISTOR 6400 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SO-8, FET General Purpose Small Signal
VISHAY
©2020 ICPDF网 联系我们和版权申明