SI4409DY-T1-GE3 [VISHAY]
Small Signal Field-Effect Transistor, 1.3A I(D), 150V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8;
| 型号： | SI4409DY-T1-GE3 |
| 厂家： | 
VISHAY |
| 描述： | Small Signal Field-Effect Transistor, 1.3A I(D), 150V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8 开关 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：121K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si4409DY
Vishay Siliconix
P-Channel 150-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
VDS (V)
RDS(on) (Ω)
ID (A)a
Qg (Typ.)
Definition
TrenchFET® Power MOSFET
100 % UIS Tested
1.2 at VGS = - 10 V
1.3 at VGS = - 6 V
- 1.3
- 1.2
•
•
- 150
4.8 nC
APPLICATIONS
•
Active Clamp Switch
•
Isolated DC/DC Converters
S
SO-8
S
S
S
G
1
2
3
4
8
7
6
5
D
D
G
D
D
Top View
D
Ordering Information:
P-Channel MOSFET
Si4409DY-T1-E3 (Lead (Pb)-free)
Si4409DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
- 150
20
V
VGS
T
C = 25 °C
TC = 70 °C
A = 25 °C
TA = 70 °C
- 1.3
- 1.0
Continuous Drain Current (TJ = 150 °C)
ID
- 0.9b, c
- 0.7b, c
- 2
T
A
IDM
IS
Pulsed Drain Current
- 1.3
- 0.9b, c
TC = 25 °C
Continuous Source-Drain Diode Current
TA = 25 °C
IAS
Avalanche Current
4
L = 0.1 mH
mJ
W
EAS
Single-Pulse Avalanche Energy
0.8
T
T
T
C = 25 °C
C = 70 °C
A = 25 °C
4.6
2.9
PD
Maximum Power Dissipation
2.2b, c
1.4b, c
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot
Symbol
RthJA
RthJF
Typical
47
Maximum
Unit
t ≤ 5 s
Steady State
55
27
°C/W
22
Notes:
a. TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under Steady State conditions is 95 °C/W.
Document Number: 70485
S09-322-Rev. B, 02-Mar-09
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1
Si4409DY
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
VGS = 0 V, ID = - 250 µA
ID = - 250 µA
Drain-Source Breakdown Voltage
- 150
V
V
DS Temperature Coefficient
- 160
5.5
mV/°C
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS = VGS, ID = - 250 µA
- 2
- 2
- 4
100
- 1
V
IGSS
VDS = 0 V, VGS
=
20 V
nA
VDS = - 150 V, VGS = 0 V
IDSS
ID(on)
RDS(on)
gfs
Zero Gate Voltage Drain Current
On-State Drain Currenta
µA
A
VDS = - 150 V, VGS = 0 V, TJ = 55 °C
- 10
VDS ≥ - 10 V, VGS = - 10 V
VGS = - 10 V, ID = - 0.5 A
0.95
1.0
1.2
1.3
Drain-Source On-State Resistancea
Forward Transconductancea
Ω
S
V
GS = - 6 V, ID = - 0.5 A
VDS = - 10 V, ID = - 0.5 A
2.2
Dynamicb
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
332
25
13
7.7
4.8
1.5
2.5
9
VDS = - 50 V, VGS = 0 V, f = 1 MHz
DS = - 75 V, VGS = - 10 V, ID = - 0.5 A
pF
V
12
Qg
Total Gate Charge
7.5
nC
Qgs
Qgd
Rg
V
DS = - 75 V, VGS = - 6 V, ID = - 0.5 A
f = 1 MHz
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Ω
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
7
14
20
30
18
14
20
25
20
V
DD = - 75 V, RL = 75 Ω
10
16
9
ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω
Turn-Off DelayTime
Fall Time
ns
Turn-On Delay Time
Rise Time
7
V
DD = - 75 V, RL = 75 Ω
10
13
10
ID ≅ - 1 A, VGEN = - 6 V, Rg = 1 Ω
Turn-Off DelayTime
Fall Time
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
Pulse Diode Forward Current
IS
ISM
VSD
trr
TC = 25 °C
- 1.3
- 2.0
- 1.2
70
A
IS = - 1 A, VGS = 0 V
Body Diode Voltage
- 0.7
43
95
40
3
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
ns
nC
Qrr
ta
150
IF = - 1.2 A, dI/dt = 100 A/µs, TJ = 25 °C
ns
tb
Reverse Recovery Rise Time
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 70485
S09-322-Rev. B, 02-Mar-09
Si4409DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2.0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
V
GS
= 10 V thru 5 V
1.6
1.2
0.8
0.4
0.0
T
= 25 °C
C
T
= - 55 °C
C
T
= 125 °C
C
0
1
2
3
4
5
0.0
1.2
2.4
3.6
4.8
6.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
1.3
1.2
1.1
1.0
0.9
0.8
500
400
300
200
100
0
C
iss
V
= 6 V
GS
V
= 10 V
GS
C
oss
C
rss
0.0
0.4
0.8
1.2
1.6
2.0
0
30
60
90
120
150
I
- Drain Current (A)
D
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
8
2.5
2.0
1.5
1.0
0.5
0.0
I
D
= 0.5 A
I
D
= 0.5 A
V
DS
= 75 V
V
GS
= 10 V
6
4
2
0
0
2
4
6
8
- 50 - 25
0
25
50
75
100 125 150
Q
- Total Gate Charge (nC)
T - Junction Temperature (°C)
J
g
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 70485
S09-322-Rev. B, 02-Mar-09
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3
Si4409DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
I
D
= 0.5 A
T
= 150 °C
J
T
= 25 °C
1
J
0.1
0
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Temperature
100
80
60
40
20
0
1.3
1.0
0.7
I
D
= 250 µA
0.4
0.1
- 0.2
- 0.5
- 50 - 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
Time (s)
T
- Temperature (°C)
J
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
10
Limited by R
*
DS(on)
1
1 ms
10 ms
0.1
0.01
100 ms
1 s
10 s
DC
T
A
= 25 °C
Single Pulse
0.001
1000
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V at which R
is specified
DS(on)
GS
Safe Operating Area, Junction-to-Ambient
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Document Number: 70485
S09-322-Rev. B, 02-Mar-09
Si4409DY
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1.5
1.2
0.9
0.6
0.3
0.0
0
25
50
75
100
125
150
T
- Case Temperature (°C)
C
Current Derating*
6.0
4.8
3.6
2.4
1.2
0.0
1.6
1.3
1.0
0.6
0.3
0
0
25
50
75
100
125
150
0
25
50
T - Ambient Temperature (°C)
A
75
100
125
150
T
- Case Temperature (°C)
C
Power, Junction-to-Foot
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 70485
S09-322-Rev. B, 02-Mar-09
www.vishay.com
5
Si4409DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
P
DM
0.05
t
1
t
2
t
t
1
2
0.02
1. Duty Cycle, D =
2. Per Unit Base = R
= 95 °C/W
thJA
(t)
3. T – T = P
JM
Z
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
1000
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70485.
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Document Number: 70485
S09-322-Rev. B, 02-Mar-09
Legal Disclaimer Notice
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Vishay
Disclaimer
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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