SI4413DY [VISHAY]
P-Channel 30-V (D-S) MOSFET; P通道30 -V （D -S ）的MOSFET
| 型号： | SI4413DY |
| 厂家： | 
VISHAY |
| 描述： | P-Channel 30-V (D-S) MOSFET |
| 文件： | 总5页 (文件大小：45K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si4413DY
Vishay Siliconix
New Product
P-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFET
APPLICATIONS
VDS (V)
rDS(on) (W)
ID (A)
0.0095 @ V
= -10 V
-13
GS
D Notebook
-30
0.0145 @ V = -4.5
GS
V
- 10
- Load switch
- Battery switch
S
SO-8
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
Top View
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
V
-30
DS
V
"20
GS
T
= 25_C
= 70_C
-9
-13
A
a
Continuous Drain Current (T = 150_C)
I
D
J
T
A
- 10.5
-7.5
A
Pulsed Drain Current
I
-50
DM
a
continuous Source Current (Diode Conduction)
I
-2.7
3.0
1.9
-1.36
1.5
S
T
= 25_C
= 70_C
A
a
Maximum Power Dissipation
P
W
D
T
A
0.95
Operating Junction and Storage Temperature Range
T , T
-55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
33
70
16
42
84
21
a
Maximum Junction-to-Ambient
R
thJA
R
thJF
_C/W
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72054
S-21977—Rev. A, 04-Nov-02
www.vishay.com
1
Si4413DY
New Product
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = -250 mA
-1.0
3.0
V
GS(th)
DS
GS
D
I
V
= 0 V, V = "20 V
"100
nA
GSS
DS
GS
V
= -24 V, V = 0 V
-1
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= -24 V, V = 0 V, T = 70_C
-10
GS
J
a
On-State Drain Current
I
V
DS
= -5 V, V = -10 V
-30
A
D(on)
GS
V
= -10 V, I = -13 A
0.0075
0.0115
0.0095
0.0145
GS
D
a
Drain-Source On-State Resistance
r
W
DS(on)
V
= -4.5 V, I = -10 A
D
GS
a
Forward Transconductance
g
50
S
V
V
I
= -15 V, I = -13 A
D
fs
DS
a
Diode Forward Voltage
V
SD
= -2.7 A, V = 0 V
-0.74
-1.1
95
S
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q
61
15.5
32
g
Q
Q
V
= -15 V, V
= -5 V, I = -13 A
nC
ns
gs
gd
DS
GS
D
t
21
35
30
d(on)
t
18
r
V
= -15 V, R = 15 W
L
= -10 V, R = 6 W
GEN G
DD
I
D
^ -1 A, V
Turn-Off Delay Time
Fall Time
t
170
97
260
150
d(off)
t
f
Gate Resistance
R
3.4
70
W
g
Source-Drain Reverse Recovery Time
t
rr
I
F
= -2.1 A, di/dt = 100 A/ms
110
ns
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
50
50
40
30
20
10
0
V
GS
= 10 thru 4 V
40
30
20
10
0
T
= 125_C
C
25_C
3 V
4
-55 _C
2 V
0
1
2
3
5
0.0
0.5
1.0
GS
1.5
2.0
2.5
3.0
3.5
4.0
V
DS
- Drain-to-Source Voltage (V)
V
- Gate-to-Source Voltage (V)
Document Number: 72054
www.vishay.com
S-21977—Rev. A, 04-Nov-02
2
Si4413DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.020
7000
5600
4200
2800
1400
0
C
iss
0.016
V
GS
= 4.5 V
0.012
0.008
0.004
0.000
V
GS
= 10 V
C
oss
C
rss
0
10
20
30
40
50
110
1.2
0
6
12
18
24
30
I
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
D
Gate Charge
On-Resistance vs. Junction Temperature
10
8
1.6
1.4
1.2
1.0
0.8
0.6
V
= 15 V
= 13 A
V
D
= 10 V
I = 13 A
DS
GS
I
D
6
4
2
0
0
22
44
66
88
-50
-25
0
25
50
75
100 125 150
Q
- Total Gate Charge (nC)
T - Junction Temperature (_C)
g
J
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.030
100
10
0.024
0.018
0.012
0.006
0.000
T
= 150_C
J
I
D
= 13 A
1
T
= 25_C
J
0.1
0.0
0.2
0.4
0.6
0.8
1.0
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Document Number: 72054
www.vishay.com
S-21977—Rev. A, 04-Nov-02
3
Si4413DY
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
1.0
100
80
0.8
0.6
0.4
I
D
= 250 mA
60
40
20
0
0.2
0.0
-0.2
-50
-25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
T
- Temperature (_C)
Time (sec)
J
Safe Operating Area, Junction-to-Case
100
Limited by r
10
DS(on)
1 ms
10 ms
1
100 ms
1 s
10 s
dc
0.1
T
= 25_C
C
Single Pulse
0.1
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 70_C/W
thJA
(t)
3. T
- T = P Z
A DM thJA
JM
Single Pulse
4. Surface Mounted
0.01
- 4
- 3
- 2
- 1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 72054
www.vishay.com
S-21977—Rev. A, 04-Nov-02
4
Si4413DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
- 4
- 3
- 2
- 1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 72054
www.vishay.com
S-21977—Rev. A, 04-Nov-02
5
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