SI4420BDY-T1-E3
更新时间：2024-09-18 15:08:23
品牌：VISHAY
描述：TRANSISTOR 9500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal
概述
规格参数
数据手册
替代型号SI4420BDY-T1-E3 概述
TRANSISTOR 9500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal 小信号场效应晶体管
SI4420BDY-T1-E3 规格参数
| 是否无铅： | 不含铅 | 是否Rohs认证： | 符合 |
| 生命周期： | Active | 零件包装代码： | SOT |
| 包装说明： | SMALL OUTLINE, R-PDSO-G8 | 针数： | 8 |
| Reach Compliance Code： | unknown | ECCN代码： | EAR99 |
| 风险等级： | 0.86 | Samacsys Confidence： | 3 |
| Samacsys Status： | Released | Samacsys PartID： | 1001008 |
| Samacsys Pin Count： | 8 | Samacsys Part Category： | Integrated Circuit |
| Samacsys Package Category： | Small Outline Packages | Samacsys Footprint Name： | 8 lead soic |
| Samacsys Released Date： | 2020-03-12 12:15:52 | Is Samacsys： | N |
| 配置： | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压： | 30 V |
| 最大漏极电流 (Abs) (ID)： | 9.5 A | 最大漏极电流 (ID)： | 9.5 A |
| 最大漏源导通电阻： | 0.0085 Ω | FET 技术： | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码： | R-PDSO-G8 | JESD-609代码： | e3 |
| 湿度敏感等级： | 1 | 元件数量： | 1 |
| 端子数量： | 8 | 工作模式： | ENHANCEMENT MODE |
| 最高工作温度： | 150 °C | 封装主体材料： | PLASTIC/EPOXY |
| 封装形状： | RECTANGULAR | 封装形式： | SMALL OUTLINE |
| 峰值回流温度（摄氏度）： | 260 | 极性/信道类型： | N-CHANNEL |
| 最大功率耗散 (Abs)： | 2.5 W | 认证状态： | Not Qualified |
| 子类别： | FET General Purpose Power | 表面贴装： | YES |
| 端子面层： | Matte Tin (Sn) | 端子形式： | GULL WING |
| 端子位置： | DUAL | 处于峰值回流温度下的最长时间： | 30 |
| 晶体管元件材料： | SILICON | Base Number Matches： | 1 |
SI4420BDY-T1-E3 数据手册
通过下载SI4420BDY-T1-E3数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载Si4420BDY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
ID (A)
13.5
11
Definition
0.0085 at VGS = 10 V
0.0110 at VGS = 4.5 V
•
TrenchFET® Power MOSFET
30
• 100 % Rg Tested
SO-8
D
S
S
S
G
1
2
3
4
8
7
6
5
D
D
D
D
G
Top View
S
Ordering Information:
Si4420BDY-T1-E3 (Lead (Pb)-free)
Si4420BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
10 s
Steady State
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
30
20
V
VGS
TA = 25 °C
TA = 70 °C
13.5
10.8
9.5
7.5
Continuous Drain Current (TJ = 150 °C)a
ID
IDM
IS
Pulsed Drain Current
50
A
Continuous Source Current (Diode Conduction)a
Single Pulse Avalanche Current
Avalanche Energy
2.3
1.26
IAS
EAS
20
20
L = 0.1 mH
mJ
W
TA = 25 °C
TA = 70 °C
2.5
1.6
1.4
0.9
Maximum Power Dissipationa
PD
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
40
Maximum
Unit
t < 10 s
50
90
28
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
RthJA
Steady State
Steady State
70
°C/W
RthJF
23
Notes:
a. Surface Mounted on FR4 board, t ≤ 10 s.
Document Number: 73067
S09-0322-Rev. C, 02-Mar-09
www.vishay.com
1
Si4420BDY
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VGS(th)
IGSS
VDS = VGS, ID = 250 µA
Gate Threshold Voltage
1.0
3.0
100
1
V
VDS = 0 V, VGS
=
20 V
Gate-Body Leakage
nA
VDS = 30 V, VGS = 0 V
DS = 30 V, VGS = 0 V, TJ = 55 °C
VDS ≥ 5 V, VGS = 10 V
IDSS
ID(on)
Zero Gate Voltage Drain Current
µA
A
V
5
On-State Drain Currenta
30
VGS = 10 V, ID = 13.5 A
0.007
0.009
50
0.0085
0.0110
Drain-Source On-State Resistancea
RDS(on)
Ω
V
GS = 4.5 V, ID = 11 A
Forward Transconductancea
Diode Forward Voltagea
gfs
VDS = 15 V, ID = 13.5 A
IS = 2.3 A, VGS = 0 V
S
V
VSD
0.75
1.1
Dynamicb
Qg
Qgt
Qgs
Qgd
Rg
VDS = 15 V, VGS = 5 V, ID = 13.5 A
Gate Charge
16
31
6.6
4.0
1.0
15
11
40
12
30
25
50
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
nC
V
DS = 15 V, VGS = 10 V, ID = 13.5 A
0.5
1.5
25
18
60
20
50
Ω
td(on)
tr
td(off)
tf
V
DD = 15 V, RL = 15 Ω
ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω
Turn-Off Delay Time
Fall Time
ns
trr
IF = 2.3 A, dI/dt = 100 A/µs
Source-Drain Reverse Recovery Time
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
35
30
25
20
15
10
5
50
45
40
35
30
25
20
15
10
5
V
= 10 V thru 4 V
GS
T
= 125 °C
C
25 °C
2.0
3 V
- 55 °C
3.5 4.0
0
0
0.0
0.5
1.0
1.5
2.5
3.0
0
1
2
3
4
5
V
GS
- Gate-to-Source Voltage (V)
V
DS
- Drain-to-Source Voltage (V)
Transfer Characteristics
Output Characteristics
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2
Document Number: 73067
S09-0322-Rev. C, 02-Mar-09
Si4420BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
3000
2500
2000
1500
1000
500
0.020
C
iss
0.016
0.012
V
= 4.5 V
GS
0.008
0.004
0.000
V
GS
= 10 V
C
oss
C
5
rss
0
0
10
15
20
25
30
0
10
20
30
40
50
V
- Drain-to-Source Voltage (V)
I
D
- Drain Current (A)
DS
On-Resistance vs. Drain Current
Capacitance
10
8
1.6
1.4
1.2
1.0
0.8
0.6
V
D
= 15 V
DS
V
I
= 10 V
GS
I
= 13.5 A
= 13.5 A
D
6
4
2
0
0
5
10
15
20
25
30
- 50 - 25
0
25
50
75
100 125 150
Q
- Total Gate Charge (nC)
T - Junction Temperature (°C)
g
J
Gate Charge
On-Resistance vs. Junction Temperature
0.05
0.04
0.03
0.02
0.01
0.00
50
10
T
= 150 °C
J
I
D
= 13.5 A
T
= 25 °C
J
1
0
2
4
6
8
10
0.00
0.2
0.4
0.6
0.8
1.0
1.2
V
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
SD
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 73067
S09-0322-Rev. C, 02-Mar-09
www.vishay.com
3
Si4420BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.4
50
40
I
D
= 250 µA
0.2
0.0
30
20
10
0
T
A
= 25 °C
- 0.2
- 0.4
- 0.6
- 0.8
- 50 - 25
0
25
50
75
100 125 150
-2
-1
10
10
1
10
100
600
T - Temperature (°C)
J
Time (s)
Single Pulse Power
Threshold Voltage
100
100 µs, 10 µs
Limited by R
*
DS(on)
10
1 ms
1
10 ms
100 ms
1 s
0.1
T
= 25 °C
A
10 s
Single Pulse
100 s, DC
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
at which R is specified
DS(on)
> minimum V
GS
Safe Operating Area, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 70 °C/W
thJA
(t)
3. T
-
T
= P Z
DM thJA
JM
A
Single Pulse
10
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 73067
S09-0322-Rev. C, 02-Mar-09
Si4420BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73067.
Document Number: 73067
S09-0322-Rev. C, 02-Mar-09
www.vishay.com
5
Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
2
5
4
E
H
1
3
S
h x 45
D
C
0.25 mm (Gage Plane)
A
All Leads
0.101 mm
q
e
B
A
1
L
0.004"
MILLIMETERS
Max
INCHES
DIM
A
Min
Min
Max
1.35
0.10
0.35
0.19
4.80
3.80
1.75
0.20
0.51
0.25
5.00
4.00
0.053
0.004
0.014
0.0075
0.189
0.150
0.069
0.008
0.020
0.010
0.196
0.157
A1
B
C
D
E
e
1.27 BSC
0.050 BSC
H
h
5.80
0.25
0.50
0°
6.20
0.50
0.93
8°
0.228
0.010
0.020
0°
0.244
0.020
0.037
8°
L
q
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
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1
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
(0.711)
0.022
0.050
(0.559)
(1.270)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
www.vishay.com
22
Document Number: 72606
Revision: 21-Jan-08
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
SI4420BDY-T1-E3 替代型号
| 型号 | 制造商 | 描述 | 替代类型 | 文档 |
| IRF8714PBF | INFINEON | HEXFET Power MOSFET | 功能相似 |
|
SI4420BDY-T1-E3 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| SI4420BDY-T1-GE3 | VISHAY | TRANSISTOR 9500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal | 获取价格 |
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| SI4420BDY_06 | VISHAY | N-Channel 30-V (D-S) MOSFET | 获取价格 |
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| SI4420DY/T3 | NXP | TRANSISTOR 12.5 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA, PLASTIC, SO-8, FET General Purpose Small Signal | 获取价格 |
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