SI4459ADY [VISHAY]
P-Channel 30-V (D-S) MOSFET; P通道30 -V （D -S ）的MOSFET
| 型号： | SI4459ADY |
| 厂家： | 
VISHAY |
| 描述： | P-Channel 30-V (D-S) MOSFET |
| 文件： | 总4页 (文件大小：116K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPICE Device Model Si4459ADY
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
CHARACTERISTICS
• P-Channel Vertical DMOS
• Macro Model (Subcircuit Model)
• Level 3 MOS
• Apply for both Linear and Switching Application
• Accurate over the −55 to 125°C Temperature Range
• Model the Gate Charge, Transient, and Diode Reverse Recovery
Characteristics
DESCRIPTION
The attached spice model describes the typical electrical
characteristics of the p-channel vertical DMOS. The subcircuit
model is extracted and optimized over the −55 to 125°C
temperature ranges under the pulsed 0-V to 10-V gate drive. The
saturated output impedance is best fit at the gate bias near the
threshold voltage.
A novel gate-to-drain feedback capacitance network is used to model
the gate charge characteristics while avoiding convergence difficulties
of the switched Cgd model. All model parameter values are optimized
to provide a best fit to the measured electrical data and are not
intended as an exact physical interpretation of the device.
SUBCIRCUIT MODEL SCHEMATIC
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate
data sheet of the same number for guaranteed specification limits.
www.vishay.com
Document Number: 68446
S-81895⎯Rev. A, 25-Aug-08
1
SPICE Device Model Si4459ADY
Vishay Siliconix
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Simulated Measured
Parameter
Symbol
Test Condition
Unit
Data
Data
Static
Gate Threshold Voltage
VGS(th)
rDS(on)
1.7
0.0038
0.0062
37
V
V
DS = VGS, ID = −250 μA
0.0039
0.0062
24
VGS = −10 V, ID = −15 A
Drain-Source On-State Resistancea
Ω
VGS = −4.5 V, ID = −10 A
Forward Transconductancea
Diode Forward Voltage
gfs
S
V
VDS = −10 V, ID = −15 A
VSD
IS = −3 A
−0.70
−0.71
Dynamicb
Input Capacitance
Ciss
Coss
Crss
6043
893
768
116
62
6000
860
790
129
61
pF
nC
VDS = −15 V, VGS = 0 V, f = 1 MHz
VDS = −15 V, VGS = −10 V, ID = −20 A
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Qg
VDS = −15 V, VGS = −4.5 V, ID = −20 A
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
16.5
23.5
16.5
23.5
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
www.vishay.com
Document Number: 68446
2
S-81895⎯Rev. A, 25-Aug-08
SPICE Device Model Si4459ADY
Vishay Siliconix
COMPARISON OF MODEL WITH MEASURED DATA (TJ=25°C UNLESS OTHERWISE NOTED)
www.vishay.com
Document Number: 68446
3
S-81895⎯Rev. A, 25-Aug-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
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Document Number: 91000
Revision: 18-Jul-08
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1
相关型号：
SI4459ADY-T1-GE3
Small Signal Field-Effect Transistor, 19.7A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8
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