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SI4465DY-E3 [VISHAY]

Transistor;
SI4465DY-E3
型号： SI4465DY-E3
厂家： VISHAY    VISHAY
描述：

Transistor
文件： 总4页 (文件大小：61K)
中文：  中文翻译
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Si4465DY  
Vishay Siliconix  
P-Channel 1.8-V (G-S) MOSFET  
PRODUCT SUMMARY  
VDS (V)  
rDS(on) (W)  
ID (A)  
0.009 @ V = -4.5 V  
-14  
-12  
-10  
GS  
0.011 @ V = -2.5 V  
GS  
-8  
0.016 @ V = -1.8 V  
GS  
S
S S  
SO-8  
S
D
D
D
D
1
2
3
4
8
7
6
5
G
S
S
G
Top View  
D
D
D D  
Ordering Information: Si4465DY  
Si4465DY-T1 (with Tape and Reel)  
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
Limit  
-8  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
DS  
V
V
GS  
"8  
T
= 25_C  
= 70_C  
-14  
-11  
A
a, b  
Continuous Drain Current (T = 150_C)  
I
J
D
T
A
A
Pulsed Drain Current  
I
-40  
DM  
a, b  
Continuous Source Current (Diode Conduction)  
I
S
-2.1  
T
= 25_C  
= 70_C  
2.5  
A
a, b  
Maximum Power Dissipation  
P
W
D
T
A
1.6  
Operating Junction and Storage Temperature Range  
T , T  
J
-55 to 150  
_C  
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
50  
a
Maximum Junction-to-Ambient  
R
thJA  
_
C/W  
Steady State  
80  
Notes  
a. Surface Mounted on FR4 Board.  
b. t v10 sec.  
Document Number: 70830  
S-31989—Rev. B, 13-Oct-03  
www.vishay.com  
1
 
Si4465DY  
Vishay Siliconix  
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
Static  
Gate Threshold Voltage  
Gate-Body Leakage  
V
V
= V , I = -250 mA  
-0.45  
V
GS(th)  
DS  
GS  
D
V
= 0 V, V = "8 V  
GS  
I
"100  
nA  
DS  
GSS  
V
= -8 V, V = 0 V  
-1  
-5  
DS  
GS  
Zero Gate Voltage Drain Current  
I
mA  
DSS  
V
= -8 V, V = 0 V, T = 55_C  
DS  
DS  
GS  
J
a
On-State Drain Current  
I
V
w -5 V, V = -4.5 V  
-20  
A
D(on)  
GS  
V
= -4.5 V, I = -14 A  
0.007  
0.009  
0.009  
0.011  
GS  
GS  
GS  
D
a
V
V
= -2.5 V, I = -12 A  
D
Drain-Source On-State Resistance  
r
W
DS(on)  
0.012  
0.016  
= -1.8 V, I = -10 A  
D
a
Forward Transconductance  
g
V
= -10 V, I = -14 A  
60  
S
V
fs  
DS  
D
a
Diode Forward Voltage  
V
SD  
I
S
= -2.1 A, V = 0 V  
0.7  
-1.2  
GS  
Dynamicb  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Turn-On Delay Time  
Rise Time  
Q
80  
15  
9
120  
g
Q
Q
V
= -4 V, V = -4.5 V, I = -14 A  
nC  
ns  
gs  
gd  
DS  
GS  
D
t
45  
55  
380  
190  
80  
90  
d(on)  
t
r
110  
760  
380  
120  
V
= -4 V, R = 4 W  
L
GEN G  
DD  
I
D
^ -1 A, V  
= -4.5 V, R = 6 W  
Turn-Off Delay Time  
Fall Time  
t
d(off)  
t
f
Source-Drain Reverse Recovery Time  
Notes  
t
rr  
I = -2.1 A, di/dt = 100 A/ms  
F
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.  
b. Guaranteed by design, not subject to production testing.  
Document Number: 70830  
S-31989—Rev. B, 13-Oct-03  
www.vishay.com  
2
 
Si4465DY  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Output Characteristics  
Transfer Characteristics  
40  
40  
32  
24  
16  
8
V
= 5 thru 2 V  
GS  
32  
24  
16  
8
1.5 V  
T
= 125_C  
C
25_C  
1 V  
-55_C  
0
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
0.0  
0.5  
1.0  
1.5  
2.0  
V
DS  
- Drain-to-Source Voltage (V)  
V
GS  
- Gate-to-Source Voltage (V)  
On-Resistance vs. Drain Current  
Capacitance  
14000  
12000  
10000  
8000  
6000  
4000  
2000  
0
0.04  
0.03  
0.02  
0.01  
0.00  
C
iss  
V
GS  
= 1.8 V  
V
V
= 2.5 V  
= 4.5 V  
GS  
C
oss  
GS  
C
rss  
0
8
16  
24  
32  
40  
0
2
4
6
8
I
D
- Drain Current (A)  
V
DS  
- Drain-to-Source Voltage (V)  
Gate Charge  
On-Resistance vs. Junction Temperature  
5
4
3
2
1
0
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
V
D
= 4 V  
V
GS  
= 4.5 V  
DS  
I
= 14 A  
I = 14 A  
D
0
20  
Q
40  
60  
80  
-50  
-25  
0
25  
50  
75  
100 125 150  
- Total Gate Charge (nC)  
T
- Junction Temperature (_C)  
g
J
Document Number: 70830  
S-31989—Rev. B, 13-Oct-03  
www.vishay.com  
3
Si4465DY  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Source-Drain Diode Forward Voltage  
On-Resistance vs. Gate-to-Source Voltage  
0.04  
0.03  
0.02  
0.01  
0.00  
50  
T
= 150_C  
J
10  
T
= 25_C  
J
I
D
= 14 A  
1
0.00  
0
1
2
3
4
5
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
V
SD  
- Source-to-Drain Voltage (V)  
V
GS  
- Gate-to-Source Voltage (V)  
Threshold Voltage  
Single Pulse Power  
0.4  
0.3  
50  
40  
I
D
= 250 mA  
0.2  
30  
20  
10  
0.1  
0.0  
-0.1  
-0.2  
0
-50  
-25  
0
25  
50  
75  
100 125 150  
0.01  
0.1  
1
10  
100  
600  
T
- Temperature (_C)  
Time (sec)  
J
Normalized Thermal Transient Impedance, Junction-to-Ambient  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
Notes:  
P
DM  
0.1  
t
1
0.05  
t
2
t
t
1
2
1. Duty Cycle, D =  
2. Per Unit Base = R  
= 80_C/W  
thJA  
(t)  
0.02  
3. T  
- T = P  
Z
JM  
A
DM thJA  
4. Surface Mounted  
Single Pulse  
0.01  
-4  
-3  
-2  
-1  
10  
10  
10  
10  
1
10  
100  
600  
Square Wave Pulse Duration (sec)  
Document Number: 70830  
S-31989—Rev. B, 13-Oct-03  
www.vishay.com  
4

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