SI4848DY-T1-E3 [VISHAY]
TRANSISTOR 2700 mA, 150 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal;
| 型号： | SI4848DY-T1-E3 |
| 厂家： | 
VISHAY |
| 描述： | TRANSISTOR 2700 mA, 150 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：179K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si4848DY
Vishay Siliconix
N-Channel 150-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
VDS (V)
RDS(on) (Ω)
ID (A)
3.7
Definition
0.085 at VGS = 10 V
0.095 at VGS = 6.0 V
•
•
TrenchFET® Power MOSFETs
Compliant to RoHS Directive 2002/95/EC
150
3.5
D
SO-8
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
Top View
S
Ordering Information: Si4848DY-T1-E3 (Lead (Pb)-free)
Si4848DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
10 s
Steady State
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
150
20
V
VGS
TA = 25 °C
A = 70 °C
3.7
3.0
2.7
2.1
Continuous Drain Current (TJ = 150 °C)a
ID
T
IDM
IAS
IS
Pulsed Drain Current
Avalanche Current
25
A
L = 0.1 mH
10
Continuous Source Current (Diode Conduction)a
2.5
3.0
1.9
1.3
1.5
1.0
TA = 25 °C
TA = 70 °C
Maximum Power Dissipationa
PD
W
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
35
Maximum
Unit
t ≤ 10 s
42
82
23
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
RthJA
Steady State
Steady State
68
°C/W
RthJF
18
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 71356
S09-0870-Rev. C, 18-May-09
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1
Si4848DY
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VGS(th)
IGSS
VDS = VGS, ID = 250 µA
Gate Threshold Voltage
2.0
V
VDS = 0 V, VGS
=
20 V
Gate-Body Leakage
100
1
nA
VDS = 120 V, VGS = 0 V
DS = 120 V, VGS = 0 V, TJ = 55 °C
VDS ≥ 5 V, VGS = 10 V
IDSS
ID(on)
Zero Gate Voltage Drain Current
µA
A
V
5
On-State Drain Currenta
25
VGS = 10 V, ID = 3.5 A
0.068
0.076
15
0.085
0.095
Drain-Source On-State Resistancea
RDS(on)
Ω
V
GS = 6.0 V, ID = 3.0 A
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
gfs
VDS = 15 V, ID = 5 A
IS = 2.5 A, VGS = 0 V
S
V
VSD
0.75
1.2
21
Qg
Qgs
Qgd
Rg
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
17
3.2
6.0
0.85
9.0
10
V
DS = 75 V, VGS = 10 V, ID = 3.5 A
nC
0.5
1.8
14
15
35
25
70
Ω
td(on)
tr
td(off)
tf
V
DD = 75 V, RL = 21 Ω
ID ≅ 3.5 A, VGEN = 10 V, Rg = 6 Ω
Turn-Off Delay Time
Fall Time
24
ns
17
trr
IF = 2.5 A, dI/dt = 100 A/µs
Source-Drain Reverse Recovery Time
45
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
25
20
15
10
5
25
20
15
10
5
V
= 10 V thru 6 V
GS
5 V
T
3
= 125 °C
C
25 °C
3 V, 4 V
- 55 °C
5
0
0
0
2
4
6
8
10
0
1
2
4
6
V
- Drain-to-Source Voltage (V)
V
- Gate-to-Source Voltage (V)
GS
DS
Output Characteristics
Transfer Characteristics
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Document Number: 71356
S09-0870-Rev. C, 18-May-09
Si4848DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.15
1200
900
600
300
0
0.12
0.09
C
iss
V
= 6 V
GS
V
= 10 V
0.06
0.03
0.00
GS
C
rss
C
oss
0
5
10
15
20
25
0
30
60
90
120
150
I
D
- Drain Current (A)
V
- Drain-to-Source Voltage (V)
DS
On-Resistance vs. Drain Current
Capacitance
3.0
2.5
2.0
1.5
1.0
0.5
0.0
20
16
12
8
V
= 10 V
= 3.5 A
GS
V
= 75 V
= 3.5 A
DS
I
D
I
D
4
0
- 50 - 25
0
25
- Junction Temperature (°C)
J
50
75
100 125 150
0
6
12
18
24
30
Q
g
- Total Gate Charge (nC)
T
Gate Charge
On-Resistance vs. Junction Temperature
50
10
0.25
0.20
0.15
0.10
0.05
0.00
I
D
= 3.5 A
T = 150 °C
J
T = 25 °C
J
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
- Source-to-Drain Voltage (V)
V
- Gate-to-Source Voltage (V)
GS
SD
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 71356
S09-0870-Rev. C, 18-May-09
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3
Si4848DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1.0
60
50
0.5
I
D
= 250 µA
40
30
20
10
0
0.0
- 0.5
- 1.0
- 1.5
- 50 - 25
0
25
50
75
100 125 150
0.01
0.1
1
10
100
T
J
- Temperature (°C)
Time (s)
Single Pulse Power
Threshold Voltage
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R
= 68 °C/W
thJA
(t)
3. T
- T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
600
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
1
10
100
1000
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71356.
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Document Number: 71356
S09-0870-Rev. C, 18-May-09
Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
2
5
4
E
H
1
3
S
h x 45
D
C
0.25 mm (Gage Plane)
A
All Leads
0.101 mm
q
e
B
A
1
L
0.004"
MILLIMETERS
Max
INCHES
DIM
A
Min
Min
Max
1.35
0.10
0.35
0.19
4.80
3.80
1.75
0.20
0.51
0.25
5.00
4.00
0.053
0.004
0.014
0.0075
0.189
0.150
0.069
0.008
0.020
0.010
0.196
0.157
A1
B
C
D
E
e
1.27 BSC
0.050 BSC
H
h
5.80
0.25
0.50
0°
6.20
0.50
0.93
8°
0.228
0.010
0.020
0°
0.244
0.020
0.037
8°
L
q
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
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1
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
(0.711)
0.022
0.050
(0.559)
(1.270)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
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Document Number: 72606
Revision: 21-Jan-08
Legal Disclaimer Notice
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Vishay
Disclaimer
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
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