SI4848DY [VISHAY]
N-Channel 150-V (D-S) MOSFET; N沟道150 -V （D -S ）的MOSFET
| 型号： | SI4848DY |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 150-V (D-S) MOSFET |
| 文件： | 总4页 (文件大小：45K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si4848DY
Vishay Siliconix
N-Channel 150-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
0.085 @ V = 10 V
3.7
3.5
GS
150
0.095 @ V = 6.0 V
GS
D
SO-8
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
S
Top View
N-Channel MOSFET
Ordering Information: Si4848DY
Si4848DY-T1 (with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
150
DS
GS
V
V
"20
T
= 25_C
= 70_C
3.7
3.0
2.7
2.1
A
a
Continuous Drain Current (T = 150__C)
I
D
J
T
A
Pulsed Drain Current
I
25
10
A
DM
Avalanch Current
L = 0.1 mH
I
AS
a
Continuous Source Current (Diode Conduction)
I
2.5
3.0
1.9
1.3
1.5
1.0
S
T
= 25_C
= 70_C
A
a
Maximum Power Dissipation
P
W
D
T
A
Operating Junction and Storage Temperature Range
T , T
-55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
35
68
18
42
82
23
a
Maximum Junction-to-Ambient
R
thJA
R
thJF
_C/W
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71356
S-03950—Rev. B, 26-May-03
www.vishay.com
1
Si4848DY
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = 250 mA
2.0
V
GS(th)
DS
GS D
V
= 0 V, V = "20 V
GS
I
"100
nA
DS
GSS
V
= 120 V, V = 0 V
1
5
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
= 120 V, V = 0 V, T = 55_C
V
DS
GS
J
a
On-State Drain Current
I
25
A
w 5 V, V = 10 V
GS
D(on)
DS
0.068
0.076
0.085
0.095
V
= 10 V, I = 3.5 A
D
GS
a
Drain-Source On-State Resistance
r
W
DS(on)
V
= 6.0 V, I = 3.0 A
D
GS
a
Forward Transconductance
g
V
= 15 V, I = 5 A
15
S
V
fs
DS
D
a
Diode Forward Voltage
V
I
S
= 2.5 A, V = 0 V
0.75
1.2
21
SD
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Q
17
3.2
6.0
0.85
9.0
10
g
Q
gs
Q
gd
V
= 75 V, V = 10 V, I = 3.5 A
nC
DS
GS
D
R
0.5
1.8
14
15
35
25
70
W
g
t
d(on)
t
r
V
= 75 V, R = 21 W
L
= 10 V, R = 6 W
GEN G
DD
I
D
^ 3.5 A, V
Turn-Off Delay Time
Fall Time
t
24
ns
d(off)
t
17
f
Source-Drain Reverse Recovery Time
t
rr
I
F
= 2.5 A, di/dt = 100 A/ms
45
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
25
25
20
15
10
5
V
= 10 thru 6 V
GS
20
15
10
5
5 V
T
C
= 125_C
25_C
3, 4 V
-55_C
0
0
0
2
4
6
8
10
0
1
2
3
4
5
6
V
- Drain-to-Source Voltage (V)
V
- Gate-to-Source Voltage (V)
GS
DS
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Document Number: 71356
S-03950—Rev. B, 26-May-03
Si4848DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.15
1200
900
600
300
0
0.12
0.09
C
iss
V
= 6 V
GS
0.06
0.03
0.00
V
= 10 V
GS
C
rss
C
oss
0
5
10
15
20
25
30
1.2
0
30
60
90
120
150
I
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
D
Gate Charge
On-Resistance vs. Junction Temperature
20
16
12
8
3.0
2.5
2.0
1.5
1.0
0.5
0.0
V
= 75 V
= 3.5 A
V
D
= 10 V
GS
I = 3.5 A
DS
I
D
4
0
0
6
12
18
24
-50
-25
0
25
50
75
100 125 150
Q
g
- Total Gate Charge (nC)
T
- Junction Temperature (_C)
J
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.25
0.20
0.15
0.10
0.05
0.00
50
10
I
D
= 3.5 A
T = 150_C
J
T = 25_C
J
1
0.0
0.2
0.4
0.6
0.8
1.0
0
2
4
6
8
10
V
- Source-to-Drain Voltage (V)
V
- Gate-to-Source Voltage (V)
GS
SD
Document Number: 71356
S-03950—Rev. B, 26-May-03
www.vishay.com
3
Si4848DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
1.0
60
50
0.5
I
D
= 250 mA
40
0.0
-0.5
-1.0
-1.5
30
20
10
0
-50
-25
0
25
50
75
100 125 150
0.01
0.1
1
10
100
T
J
- Temperature (_C)
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 68_C/W
thJA
(t)
Z
3. T
- T = P
DM thJA
JM
A
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
1000
Square Wave Pulse Duration (sec)
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Document Number: 71356
S-03950—Rev. B, 26-May-03
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TRANSISTOR 2700 mA, 150 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal
VISHAY
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