SI4886DY-E3 [VISHAY]
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET;
| 型号： | SI4886DY-E3 |
| 厂家： | 
VISHAY |
| 描述： | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
| 文件： | 总5页 (文件大小：82K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si4886DY
Vishay Siliconix
New Product
N-Channel Reduced Qg, Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
0.010 @ V = 10 V
13
11
GS
30
0.0135 @ V = 4.5 V
GS
D
D
D D
SO-8
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
N-Channel MOSFET
Top View
S
S
S
ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
30
DS
GS
V
V
"20
T
= 25_C
= 70_C
13
9.5
7.6
A
a
Continuous Drain Current (T = 150_C)
I
J
D
T
A
10.5
A
Pulsed Drain Current
I
"50
DM
a
Continuous Source Current (Diode Conduction)
I
2.60
2.95
1.90
1.40
1.56
1.0
S
T
= 25_C
= 70_C
A
a
Maximum Power Dissipation
P
W
D
T
A
Operating Junction and Storage Temperature Range
T , T
–55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
35
68
18
42
80
23
a
Maximum Junction-to-Ambient (MOSFET)
R
thJA
thJF
C/W
Maximum Junction-to-Foot (Drain)
R
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71142
S-00206—Rev. A, 21-Feb-00
www.vishay.com S FaxBack 408-970-5600
2-1
Si4886DY
New Product
Vishay Siliconix
MOSFET SPECIFICATIONS (T= _2C5 UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = 250 mA
0.80
V
GS(th)
DS
GS
D
V
DS
= 0 V, V = "20 V
GS
I
"100
nA
GSS
V
= 24 V, V = 0 V
1
5
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= 24 V, V = 0 V, T = 70_C
GS
J
a
On-State Drain Current
I
40
A
V
DS
w 5 V, V = 10 V
GS
D(on)
0.0078
0.010
V
GS
= 10 V, I = 13 A
D
a
Drain-Source On-State Resistance
r
W
DS(on)
V
= 4.5 V, I = 11 A
0.0105
38
0.0135
GS
D
a
Forward Transconductance
g
V
DS
= 15 V, I = 13 A
S
V
fs
D
a
Diode Forward Voltage
V
SD
I
= 2.6 A, V = 0 V
0.74
1.1
20
S
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q
14.5
3.2
4.3
14
5
g
Q
gs
Q
gd
V
= 15 V, V = 5.0 V, I = 13 A
nC
ns
DS
GS
D
t
20
10
80
30
70
d(on)
t
r
V
= 15 V, R = 15 W
L
DD
I
^ 1 A, V
= 10 V, R = 6 W
GEN G
D
Turn-Off Delay Time
Fall Time
t
42
18
40
d(off)
t
f
Source-Drain Reverse Recovery Time
t
rr
I = 2.6 A, di/dt = 100 A/ms
F
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
Output Characteristics
Transfer Characteristics
50
50
40
30
20
10
0
V
GS
= 10 thru 4 V
40
30
20
10
0
T
C
= 125_C
3 V
1 V
25_C
–55_C
0
2
4
6
8
10
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Document Number: 71142
S-00206—Rev. A, 21-Feb-00
www.vishay.com S FaxBack 408-970-5600
2-2
Si4886DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.020
0.015
0.010
0.005
0
2500
2000
1500
1000
500
0
C
iss
V
GS
= 4.5 V
V
GS
= 10 V
C
oss
C
rss
0
10
20
30
40
50
0
5
10
15
20
25
30
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
8
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
V
= 15 V
= 13 A
V
GS
= 10 V
DS
I
D
I = 13 A
D
6
4
2
0
0
5
10
15
20
25
30
–50 –25
0
25
50
75
100 125 150
Q
g
– Total Gate Charge (nC)
T – Junction Temperature (_C)
J
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.05
0.04
0.03
0.02
0.01
0
50
10
T = 150_C
J
T = 25_C
J
I
D
= 13 A
1
0.00
0
2
4
6
8
10
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Document Number: 71142
S-00206—Rev. A, 21-Feb-00
www.vishay.com S FaxBack 408-970-5600
2-3
Si4886DY
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
Single Pulse Power
Threshold Voltage
0.4
60
50
I
D
= 250 mA
0.2
40
30
20
10
–0.0
–0.2
–0.4
–0.6
–0.8
0
–50 –25
0
25
50
75
100 125 150
0.01
0.1
1
10
30
Time (sec)
T – Temperature (_C)
J
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
1. Duty Cycle, D =
2
2. Per Unit Base = R
= 68_C/W
thJA
(t)
3. T – T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
–4
–3
–2
–1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
–4
–3
–2
–1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 71142
S-00206—Rev. A, 21-Feb-00
www.vishay.com S FaxBack 408-970-5600
2-4
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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