SI4953ADY [VISHAY]
Dual P-Channel 30-V (D-S) MOSFET; 双P通道30 - V（D -S）的MOSFET
| 型号： | SI4953ADY |
| 厂家： | 
VISHAY |
| 描述： | Dual P-Channel 30-V (D-S) MOSFET |
| 文件： | 总4页 (文件大小：59K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
_C/W
Si4953ADY
Vishay Siliconix
New Product
Dual P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
0.053 @ V = –10 V
GS
–4.9
–3.7
–30
0.090 @ V = –4.5
GS
V
S
1
S
2
SO-8
S
G
S
D
1
D
1
D
2
D
2
1
2
3
4
8
1
1
2
2
G
1
G
2
7
6
5
G
Top View
D
1
D
1
D
2
D
2
P-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
–30
DS
GS
V
V
"20
T
= 25_C
= 70_C
–3.7
–2.9
–4.9
–3.9
A
a
Continuous Drain Current (T = 150_C)
I
D
J
T
A
A
Pulsed Drain Current
I
–30
DM
a
continuous Source Current (Diode Conduction)
I
–1.7
2.0
–0.9
1.1
S
T
= 25_C
= 70_C
A
a
Maximum Power Dissipation
P
W
D
T
A
1.3
0.7
Operating Junction and Storage Temperature Range
T , T
–55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
52
90
32
62.5
110
40
a
Maximum Junction-to-Ambient
R
thJA
thJF
Maximum Junction-to-Foot (Drain)
R
Notes
a. Surface Mounted on 1 ” x 1” FR4 Board.
Document Number: 71091
S-015393—Rev. B, 17-Jul-00
www.vishay.com S FaxBack 408-970-5600
2-1
Si4953ADY
New Product
Vishay Siliconix
SPECIFICATIONS (T = _2C5 UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = –250 mA
–1
V
GS(th)
DS
GS
D
I
V
= 0 V, V = "20 V
"100
nA
GSS
DS
GS
V
= –30 V, V = 0 V
–1
DS
GS
Zero Gate Voltage Drain Current
I
mA
A
DSS
D(on)
DS(on)
V
DS
= –30 V, V = 0 V, T = 55_C
–25
GS
J
a
On-State Drain Current
I
V
= –5 V, V = –10 V
–30
DS
GS
GS
GS
V
V
= –10 V, I = –4.9 A
0.045
0.075
0.053
0.090
D
a
Drain-Source On-State Resistance
r
W
= –4.5 V, I = –3.7 A
D
a
Forward Transconductance
g
9
S
V
V
= –10 V, I = –4.9 A
D
fs
DS
a
Diode Forward Voltage
V
SD
I
= –1.7 A, V = 0 V
–0.8
–1.2
25
S
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q
15
4
g
Q
gs
Q
gd
V
= –15 V, V = –10 V, I = –4.9 A
nC
ns
DS
GS
D
2
t
7
15
20
80
40
60
d(on)
t
10
40
20
30
r
V
= –15 V, R = 15 W
L
DD
I
D
^ –1 A, V
= –10 V, R = 6 W
GEN G
Turn-Off Delay Time
Fall Time
t
d(off)
t
f
Source-Drain Reverse Recovery Time
t
rr
I = –1.7 A, di/dt = 100 A/ms
F
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
Output Characteristics
Transfer Characteristics
30
30
24
18
12
6
T
C
= –55_C
V
GS
= 10 thru 7 V
6 V
25_C
24
18
12
6
5 V
125_C
4 V
3 V
0
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
1
2
3
4
5
6
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Document Number: 71091
S-015393—Rev. B, 17-Jul-00
www.vishay.com S FaxBack 408-970-5600
2-2
Si4953ADY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.20
0.15
0.10
0.05
0
1500
1200
900
600
300
0
C
iss
V
GS
= 4.5 V
V
GS
= 10 V
C
oss
C
rss
0
0
0
6
12
18
24
30
0
6
12
18
24
30
I
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
D
Gate Charge
On-Resistance vs. Junction Temperature
10
8
1.6
1.4
1.2
1.0
0.8
0.6
V
= 15 V
= 4.9 A
V
D
= 10 V
I = 4.9 A
DS
GS
I
D
6
4
2
0
4
8
12
16
20
–50 –25
0
25
50
75
100 125 150
Q
g
– Total Gate Charge (nC)
T – Junction Temperature (_C)
J
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
30
10
T = 150_C
J
I
D
= 4.9 A
T = 25_C
J
1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
2
4
6
8
10
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Document Number: 71091
S-015393—Rev. B, 17-Jul-00
www.vishay.com S FaxBack 408-970-5600
2-3
Si4953ADY
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.8
50
40
0.6
I
D
= 250 mA
0.4
0.2
30
20
0.0
10
0
–0.2
–0.4
–3
–2
–1
–50 –25
0
25
50
75
100 125 150
10
10
10
1
10
100
600
T
J
– Temperature (_C)
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
1. Duty Cycle, D =
2
2. Per Unit Base = R
= 90_C/W
thJA
(t)
3. T – T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
–4
–3
–2
–1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
–4
–3
–2
–1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 71091
S-015393—Rev. B, 17-Jul-00
www.vishay.com S FaxBack 408-970-5600
2-4
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