SI4955DY [VISHAY]
Assymetrical Dual P-Channel 30-V/20-V (D-S) MOSFETs; 不对称双P通道30伏/ 20 -V（ DS）中的MOSFET
| 型号： | SI4955DY |
| 厂家： | 
VISHAY |
| 描述： | Assymetrical Dual P-Channel 30-V/20-V (D-S) MOSFETs |
| 文件： | 总8页 (文件大小：93K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si4955DY
Vishay Siliconix
New Product
Assymetrical Dual P-Channel 30-V/20-V (D-S) MOSFETs
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFETs
D Low Gate Drive (2.5 V) Capability For
Channel 2
VDS (V)
rDS(on) (W)
ID (A)
0.054 @ V = −10 V
−5.0
−3.7
−7.0
−6.2
−5.2
GS
Channel-1
Channel-2
−30
0.100 @ V = −4.5 V
APPLICATIONS
GS
0.027 @ V = −4.5 V
GS
D Game Station
− Load Switch
0.035 @ V = −2.5 V
−20
GS
0.048 @ V = −1.8 V
GS
S
1
S
2
SO-8
S
G
S
D
1
D
1
D
2
D
2
1
8
7
6
5
1
1
2
2
2
3
4
G
2
G
G
1
Top View
Ordering Information: Si4955DY—E3
Si4955DY-T1—E3 (with Tape and Reel)
D
1
D
2
P-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Channel-1
Channel-2
10 secs Steady State
10 secs
Steady State
Parameter
Symbol
Unit
Drain-Source Voltage
Gate-Source Voltage
V
−30
−20
DS
V
V
GS
"20
"8
T
= 25_C
= 70_C
−5.0
−4.0
−3.8
−3.0
−7.0
−5.6
−5.3
−4.2
A
a
Continuous Drain Current (T = 150_C)
I
J
D
T
A
A
Pulsed Drain Current
I
−20
DM
a
Continuous Source Current (Diode Conduction)
I
−1.7
2.0
−0.9
1.1
−1.7
2
−0.9
1.1
S
T
A
= 25_C
= 70_C
a
Maximum Power Dissipation
P
W
D
T
A
1.3
0.7
1.3
0.7
Operating Junction and Storage Temperature Range
T , T
−55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Channel-1
Channel-2
Typ
Max
Typ
Max
Parameter
Symbol
Unit
t v 10 sec
55
90
33
62.5
110
40
58
91
34
62.5
110
40
a
Maximum Junction-to-Ambient
R
thJA
thJF
Steady State
_C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72241
S-32411—Rev. B, 24-Nov-03
www.vishay.com
1
Si4955DY
Vishay Siliconix
New Product
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
V
V
= V , I = −250 mA
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
−1.0
−0.4
−3
−1
DS
GS
D
Gate Threshold Voltage
Gate-Body Leakage
V
V
GS(th)
= V , I = −250 mA
DS
GS
D
V
= 0 V, V = "20 V
"100
"100
−1
DS
GS
I
nA
GSS
V
= 0 V, V = "8 V
GS
DS
DS
DS
V
= −24 V, V = 0 V
GS
V
= −16 V, V = 0 V
−1
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
V
= −24 V, V = 0 V, T = 85_C
−5
DS
GS
J
= −16 V, V = 0 V, T = 85_C
−5
DS
GS
J
V
DS
w −5 V, V = −10 V
−20
−20
GS
a
On-State Drain Current
I
A
D(on)
V
DS
p −5 V, V = −10 V
GS
V
= −10 V, I = −5.0 A
0.044
0.022
0.082
0.029
0.039
10
0.054
0.027
0.100
0.035
0.048
GS
GS
GS
GS
D
V
V
V
= −4.5 V, I = −7.0 A
D
a
Drain-Source On-State Resistance
= −4.5 V, I = −3.7 A
r
W
D
DS(on)
= −2.5 V, I = −6.2 A
D
V
= −1.8 V, I = −3 A
D
GS
DS
V
= −15 V, I = −5.0 A
D
a
Forward Transconductance
g
fs
S
V
V
= −15 V, I = −3 A
25
DS
D
I
= −1.7 A, V = 0 V
−0.80
−0.80
−1.2
−1.2
S
S
GS
a
Diode Forward Voltage
V
SD
I
= −1.7 A, V = 0 V
GS
Dynamicb
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
12.5
21
19
25
Total Gate Charge
Q
g
Channel-1
V
= −15 V, V = −10 V, I = −5.0 A
GS D
2.1
2.6
3.5
6.0
7
DS
nC
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q
Q
gs
gd
Channel-2
V
= −10 V, V = −4.5 V, I = −7 A
DS
GS D
15
30
t
d(on)
20
Channel-1
10
15
V
DD
= −15 V, R = −15 W
L
t
r
I
D
^ −1 A, V
= −10 V, R = 6 W
40
60
GEN G
30
45
Channel-2
= −10 V, R = 10 W
Turn-Off Delay Time
Fall Time
t
ns
d(off)
V
DD
^ −1 A, V
L
125
22
190
35
I
D
= −4.5 V, R = 6 W
GEN G
t
f
85
130
60
I
I
= −1.7 A, di/dt = 100 A/ms
= −1.7 A, di/dt = 100 A/ms
25
F
Source-Drain
Reverse Recovery Time
t
rr
64
90
F
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Document Number: 72241
S-32411—Rev. B, 24-Nov-03
www.vishay.com
2
Si4955DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
CHANNEL 1
Output Characteristics
Transfer Characteristics
20
16
12
8
20
V
GS
= 10 thru 5 V
16
12
8
4 V
3 V
T
2
= 125_C
C
4
4
25_C
−55_C
0
0
0
1
3
4
5
0
1
2
3
4
5
6
V
DS
− Drain-to-Source Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
1000
800
600
400
200
0
0.20
0.16
0.12
0.08
0.04
0.00
C
iss
V
GS
= 4.5 V
V
GS
= 10 V
C
oss
C
rss
0
4
8
12
16
20
0
6
12
18
24
30
I
D
− Drain Current (A)
V
DS
− Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
8
1.6
1.4
1.2
1.0
0.8
0.6
V
D
= 15 V
V
= 10 V
DS
GS
I
= 5.0 V
I = 5.0 V
D
6
4
2
0
0
2
4
6
8
10
12
14
−50 −25
0
25
50
75
100 125 150
Q
− Total Gate Charge (nC)
T
− Junction Temperature (_C)
g
J
Document Number: 72241
S-32411—Rev. B, 24-Nov-03
www.vishay.com
3
Si4955DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
CHANNEL 1
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.20
30
10
T
= 150_C
J
0.16
0.12
0.08
0.04
0.00
I
D
= 2 A
I
D
= 5 A
T
= 25_C
J
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
2
4
6
8
10
V
SD
− Source-to-Drain Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Threshold Voltage
Single Pulse Power
0.6
0.4
30
25
20
I
D
= 250 mA
0.2
15
10
0.0
−0.2
−0.4
5
0
−50 −25
0
25
50
75
100 125 150
−3
−2
−1
10
10
10
1
10
100
600
T
− Temperature (_C)
Time (sec)
J
Safe Operating Area
100
I
Limited
DM
r
Limited
DS(on)
P(t) = 0.0001
10
P(t) = 0.001
P(t) = 0.01
I
1
D(on)
Limited
P(t) = 0.1
P(t) = 1
0.1
T
= 25_C
P(t) = 10
A
Single Pulse
dc
BV
DSS
Limited
0.01
0.1
1
10
100
V
DS
− Drain-to-Source Voltage (V)
Document Number: 72241
S-32411—Rev. B, 24-Nov-03
www.vishay.com
4
Si4955DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
CHANNEL 1
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 90_C/W
thJA
(t)
3. T − T = P Z
DM thJA
JM
A
Single Pulse
4. Surface Mounted
0.01
−4
−3
−2
−1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
−4
−3
−2
−1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
CHANNEL 2
Output Characteristics
Transfer Characteristics
20
20
16
12
8
V
GS
= 5 thru 2 V
16
12
8
1.5 V
T
= 125_C
C
4
4
25_C
−55_C
1 V
0
0
0
1
2
3
4
5
0.0
0.4
0.8
1.2
1.6
2.0
V
DS
− Drain-to-Source Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Document Number: 72241
S-32411—Rev. B, 24-Nov-03
www.vishay.com
5
Si4955DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
CHANNEL 2
On-Resistance vs. Drain Current
Capacitance
3000
2500
2000
1500
1000
500
0.10
0.08
0.06
C
iss
V
GS
= 1.8 V
0.04
0.02
0.00
V
V
= 2.5 V
= 4.5 V
GS
C
oss
GS
C
rss
0
0
4
8
12
16
20
0
4
8
12
16
20
I
D
− Drain Current (A)
V
DS
− Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
5
4
3
2
1
0
1.6
1.4
1.2
1.0
0.8
0.6
V
D
= 10 V
V
= 4.5 V
DS
GS
I
= 7 A
I = 7 A
D
0
4
8
12
16
20
24
−50 −25
0
25
50
75
100 125 150
Q
− Total Gate Charge (nC)
T
− Junction Temperature (_C)
g
J
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.10
0.08
0.06
0.04
0.02
0.00
20
10
I
D
= 7 A
T
= 150_C
J
T
= 25_C
J
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
V
SD
− Source-to-Drain Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Document Number: 72241
S-32411—Rev. B, 24-Nov-03
www.vishay.com
6
Si4955DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
CHANNEL 2
Single Pulse Power
Threshold Voltage
30
0.4
0.3
25
20
I
D
= 250 mA
0.2
0.1
15
10
0.0
−0.1
5
0
−0.2
−3
−2
−1
10
10
10
1
10
100
600
−50 −25
0
25
50
75
100 125 150
Time (sec)
T
− Temperature (_C)
J
Safe Operating Area
100
I
Limited
DM
r
Limited
DS(on)
P(t) = 0.0001
P(t) = 0.001
10
I
1
D(on)
P(t) = 0.01
P(t) = 0.1
Limited
0.1
P(t) = 1
P(t) = 10
dc
T
A
= 25_C
Single Pulse
BV
DSS
Limited
10
0.01
0.1
1
100
V
DS
− Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 91_C/W
thJA
(t)
3. T − T = P Z
DM thJA
JM
A
Single Pulse
4. Surface Mounted
0.01
−4
−3
−2
−1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 72241
S-32411—Rev. B, 24-Nov-03
www.vishay.com
7
Si4955DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
CHANNEL 2
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
−4
−3
−2
−1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 72241
S-32411—Rev. B, 24-Nov-03
www.vishay.com
8
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FAIRCHILD
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