SI4955DY-E3 [VISHAY]
Transistor;
VISHAY 
Si4955DY
Vishay Siliconix
New Product
Assymetrical Dual P-Channel 30-V/20-V (D-S) MOSFETs
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFETs
D Low Gate Drive (2.5 V) Capability For
Channel 2
VDS (V)
rDS(on) (W)
ID (A)
0.054 @ V = −10 V
−5.0
−3.7
−7.0
−6.2
−5.2
GS
Channel-1
Channel-2
−30
0.100 @ V = −4.5 V
APPLICATIONS
GS
0.027 @ V = −4.5 V
GS
D Game Station
− Load Switch
0.035 @ V = −2.5 V
−20
GS
0.048 @ V = −1.8 V
GS
S
1
S
2
SO-8
S
G
S
D
1
D
1
D
2
D
2
1
8
7
6
5
1
1
2
2
2
3
4
G
2
G
G
1
Top View
Ordering Information: Si4955DY—E3
Si4955DY-T1—E3 (with Tape and Reel)
D
1
D
2
P-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Channel-1
Channel-2
10 secs Steady State
10 secs
Steady State
Parameter
Symbol
Unit
Drain-Source Voltage
Gate-Source Voltage
V
−30
−20
DS
V
V
GS
"20
"8
T
= 25_C
= 70_C
−5.0
−4.0
−3.8
−3.0
−7.0
−5.6
−5.3
−4.2
A
a
Continuous Drain Current (T = 150_C)
I
J
D
T
A
A
Pulsed Drain Current
I
−20
DM
a
Continuous Source Current (Diode Conduction)
I
−1.7
2.0
−0.9
1.1
−1.7
2
−0.9
1.1
S
T
A
= 25_C
= 70_C
a
Maximum Power Dissipation
P
W
D
T
A
1.3
0.7
1.3
0.7
Operating Junction and Storage Temperature Range
T , T
−55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Channel-1
Channel-2
Typ
Max
Typ
Max
Parameter
Symbol
Unit
t v 10 sec
55
90
33
62.5
110
40
58
91
34
62.5
110
40
a
Maximum Junction-to-Ambient
R
thJA
thJF
Steady State
_C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72241
S-32411—Rev. B, 24-Nov-03
www.vishay.com
1
Si4955DY
Vishay Siliconix
New Product
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
V
V
= V , I = −250 mA
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
−1.0
−0.4
−3
−1
DS
GS
D
Gate Threshold Voltage
Gate-Body Leakage
V
V
GS(th)
= V , I = −250 mA
DS
GS
D
V
= 0 V, V = "20 V
"100
"100
−1
DS
GS
I
nA
GSS
V
= 0 V, V = "8 V
GS
DS
DS
DS
V
= −24 V, V = 0 V
GS
V
= −16 V, V = 0 V
−1
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
V
= −24 V, V = 0 V, T = 85_C
−5
DS
GS
J
= −16 V, V = 0 V, T = 85_C
−5
DS
GS
J
V
DS
w −5 V, V = −10 V
−20
−20
GS
a
On-State Drain Current
I
A
D(on)
V
DS
p −5 V, V = −10 V
GS
V
= −10 V, I = −5.0 A
0.044
0.022
0.082
0.029
0.039
10
0.054
0.027
0.100
0.035
0.048
GS
GS
GS
GS
D
V
V
V
= −4.5 V, I = −7.0 A
D
a
Drain-Source On-State Resistance
= −4.5 V, I = −3.7 A
r
W
D
DS(on)
= −2.5 V, I = −6.2 A
D
V
= −1.8 V, I = −3 A
D
GS
DS
V
= −15 V, I = −5.0 A
D
a
Forward Transconductance
g
fs
S
V
V
= −15 V, I = −3 A
25
DS
D
I
= −1.7 A, V = 0 V
−0.80
−0.80
−1.2
−1.2
S
S
GS
a
Diode Forward Voltage
V
SD
I
= −1.7 A, V = 0 V
GS
Dynamicb
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
12.5
21
19
25
Total Gate Charge
Q
g
Channel-1
V
= −15 V, V = −10 V, I = −5.0 A
GS D
2.1
2.6
3.5
6.0
7
DS
nC
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q
Q
gs
gd
Channel-2
V
= −10 V, V = −4.5 V, I = −7 A
DS
GS D
15
30
t
d(on)
20
Channel-1
10
15
V
DD
= −15 V, R = −15 W
L
t
r
I
D
^ −1 A, V
= −10 V, R = 6 W
40
60
GEN G
30
45
Channel-2
= −10 V, R = 10 W
Turn-Off Delay Time
Fall Time
t
ns
d(off)
V
DD
^ −1 A, V
L
125
22
190
35
I
D
= −4.5 V, R = 6 W
GEN G
t
f
85
130
60
I
I
= −1.7 A, di/dt = 100 A/ms
= −1.7 A, di/dt = 100 A/ms
25
F
Source-Drain
Reverse Recovery Time
t
rr
64
90
F
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Document Number: 72241
S-32411—Rev. B, 24-Nov-03
www.vishay.com
2
Si4955DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
CHANNEL 1
Output Characteristics
Transfer Characteristics
20
16
12
8
20
V
GS
= 10 thru 5 V
16
12
8
4 V
3 V
T
2
= 125_C
C
4
4
25_C
−55_C
0
0
0
1
3
4
5
0
1
2
3
4
5
6
V
DS
− Drain-to-Source Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
1000
800
600
400
200
0
0.20
0.16
0.12
0.08
0.04
0.00
C
iss
V
GS
= 4.5 V
V
GS
= 10 V
C
oss
C
rss
0
4
8
12
16
20
0
6
12
18
24
30
I
D
− Drain Current (A)
V
DS
− Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
8
1.6
1.4
1.2
1.0
0.8
0.6
V
D
= 15 V
V
= 10 V
DS
GS
I
= 5.0 V
I = 5.0 V
D
6
4
2
0
0
2
4
6
8
10
12
14
−50 −25
0
25
50
75
100 125 150
Q
− Total Gate Charge (nC)
T
− Junction Temperature (_C)
g
J
Document Number: 72241
S-32411—Rev. B, 24-Nov-03
www.vishay.com
3
Si4955DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
CHANNEL 1
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.20
30
10
T
= 150_C
J
0.16
0.12
0.08
0.04
0.00
I
D
= 2 A
I
D
= 5 A
T
= 25_C
J
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
2
4
6
8
10
V
SD
− Source-to-Drain Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Threshold Voltage
Single Pulse Power
0.6
0.4
30
25
20
I
D
= 250 mA
0.2
15
10
0.0
−0.2
−0.4
5
0
−50 −25
0
25
50
75
100 125 150
−3
−2
−1
10
10
10
1
10
100
600
T
− Temperature (_C)
Time (sec)
J
Safe Operating Area
100
I
Limited
DM
r
Limited
DS(on)
P(t) = 0.0001
10
P(t) = 0.001
P(t) = 0.01
I
1
D(on)
Limited
P(t) = 0.1
P(t) = 1
0.1
T
= 25_C
P(t) = 10
A
Single Pulse
dc
BV
DSS
Limited
0.01
0.1
1
10
100
V
DS
− Drain-to-Source Voltage (V)
Document Number: 72241
S-32411—Rev. B, 24-Nov-03
www.vishay.com
4
Si4955DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
CHANNEL 1
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 90_C/W
thJA
(t)
3. T − T = P Z
DM thJA
JM
A
Single Pulse
4. Surface Mounted
0.01
−4
−3
−2
−1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
−4
−3
−2
−1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
CHANNEL 2
Output Characteristics
Transfer Characteristics
20
20
16
12
8
V
GS
= 5 thru 2 V
16
12
8
1.5 V
T
= 125_C
C
4
4
25_C
−55_C
1 V
0
0
0
1
2
3
4
5
0.0
0.4
0.8
1.2
1.6
2.0
V
DS
− Drain-to-Source Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Document Number: 72241
S-32411—Rev. B, 24-Nov-03
www.vishay.com
5
Si4955DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
CHANNEL 2
On-Resistance vs. Drain Current
Capacitance
3000
2500
2000
1500
1000
500
0.10
0.08
0.06
C
iss
V
GS
= 1.8 V
0.04
0.02
0.00
V
V
= 2.5 V
= 4.5 V
GS
C
oss
GS
C
rss
0
0
4
8
12
16
20
0
4
8
12
16
20
I
D
− Drain Current (A)
V
DS
− Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
5
4
3
2
1
0
1.6
1.4
1.2
1.0
0.8
0.6
V
D
= 10 V
V
= 4.5 V
DS
GS
I
= 7 A
I = 7 A
D
0
4
8
12
16
20
24
−50 −25
0
25
50
75
100 125 150
Q
− Total Gate Charge (nC)
T
− Junction Temperature (_C)
g
J
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.10
0.08
0.06
0.04
0.02
0.00
20
10
I
D
= 7 A
T
= 150_C
J
T
= 25_C
J
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
V
SD
− Source-to-Drain Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Document Number: 72241
S-32411—Rev. B, 24-Nov-03
www.vishay.com
6
Si4955DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
CHANNEL 2
Single Pulse Power
Threshold Voltage
30
0.4
0.3
25
20
I
D
= 250 mA
0.2
0.1
15
10
0.0
−0.1
5
0
−0.2
−3
−2
−1
10
10
10
1
10
100
600
−50 −25
0
25
50
75
100 125 150
Time (sec)
T
− Temperature (_C)
J
Safe Operating Area
100
I
Limited
DM
r
Limited
DS(on)
P(t) = 0.0001
P(t) = 0.001
10
I
1
D(on)
P(t) = 0.01
P(t) = 0.1
Limited
0.1
P(t) = 1
P(t) = 10
dc
T
A
= 25_C
Single Pulse
BV
DSS
Limited
10
0.01
0.1
1
100
V
DS
− Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 91_C/W
thJA
(t)
3. T − T = P Z
DM thJA
JM
A
Single Pulse
4. Surface Mounted
0.01
−4
−3
−2
−1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 72241
S-32411—Rev. B, 24-Nov-03
www.vishay.com
7
Si4955DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
CHANNEL 2
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
−4
−3
−2
−1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 72241
S-32411—Rev. B, 24-Nov-03
www.vishay.com
8
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
相关型号：
SI4963DYD84Z
Power Field-Effect Transistor, 6.2A I(D), 20V, 0.033ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
FAIRCHILD
SI4963DYF011
Power Field-Effect Transistor, 6.2A I(D), 20V, 0.033ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明