SI4963BDY-T1-E3 [VISHAY]
MOSFET 2P-CH 20V 4.9A 8-SOIC;
| 型号： | SI4963BDY-T1-E3 |
| 厂家： | 
VISHAY |
| 描述： | MOSFET 2P-CH 20V 4.9A 8-SOIC 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：157K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si4963BDY
Vishay Siliconix
Dual P-Channel 2.5-V (G-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
VDS (V)
RDS(on) (Ω)
ID (A)
- 6.5
- 5.2
Definition
0.032 at VGS = - 4.5 V
0.050 at VGS = - 2.5 V
•
Compliant to RoHS Directive 2002/95/EC
- 20
S
1
S
2
SO-8
S
D
1
D
1
D
2
D
2
1
2
3
4
8
7
6
5
1
G
1
S
2
2
G
G
2
1
G
Top View
D
D
2
1
Ordering Information: Si4963BDY-T1-E3 (Lead (Pb)-free)
Si4963BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
10 s
Steady State
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
- 20
V
VGS
12
TA = 25 °C
TA = 70 °C
- 6.5
- 5.2
- 4.9
- 3.9
Continuous Drain Current (TJ = 150 °C)a
ID
A
IDM
IS
Pulsed Drain Current
- 40
Continuous Source Current (Diode Conduction)a
- 1.7
2.0
- 0.9
1.1
TA = 25 °C
TA = 70 °C
Maximum Power Dissipationa
PD
W
1.3
0.7
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
58
Maximum
62.5
Unit
t ≤ 10 s
Maximum Junction-to-Ambienta
RthJA
Steady State
Steady State
91
110
°C/W
RthJF
Maximum Junction-to-Foot (Drain)
34
40
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm.
Document Number: 72753
S09-0704-Rev. B, 27-Apr-09
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1
Si4963BDY
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VGS(th)
IGSS
VDS = VGS, ID = - 250 µA
Gate Threshold Voltage
- 0.6
- 1.4
100
- 1
V
VDS = 0 V, VGS
=
12 V
Gate-Body Leakage
nA
VDS = - 20 V, VGS = 0 V
DS = - 20 V, VGS = 0 V, TJ = 55 °C
VDS ≤ - 5 V, VGS = - 4.5 V
IDSS
ID(on)
Zero Gate Voltage Drain Current
µA
A
V
- 5
On-State Drain Currenta
- 20
VGS = - 4.5 V, ID = - 6.5 A
0.025
0.040
18
0.032
0.050
Drain-Source On-State Resistancea
RDS(on)
Ω
V
GS = - 2.5 V, ID = - 2 A
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
gfs
VDS = - 10 V, ID = - 6.5 A
IS = - 1.7 A, VGS = 0 V
S
V
VSD
- 0.75
- 1.2
21
Qg
Qgs
Qgd
Rg
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
14
2.6
4.6
8.3
30
40
80
55
40
VDS = - 10 V, VGS = - 4.5 V, ID = - 6.5 A
f = 1 MHz
nC
Ω
td(on)
tr
td(off)
tf
45
60
V
DD = - 10 V, RL = 10 Ω
ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω
Turn-Off Delay Time
Fall Time
120
85
ns
trr
IF = - 1.7 A, dI/dt = 100 A/µs
Source-Drain Reverse Recovery Time
80
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C unless otherwise noted
40
32
24
16
8
40
32
24
16
8
T
C
= - 55 °C
25 °C
V
GS
= 5 thru 3.5 V
3 V
125 °C
2.5 V
2 V
1.5 V
0
0
0
1
2
3
4
5
0.0
0.5
1.0
GS
1.5
2.0
2.5
3.0
3.5
4.0
V
– Drain-to-Source Voltage (V)
DS
V
– Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
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Document Number: 72753
S09-0704-Rev. B, 27-Apr-09
Si4963BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C unless otherwise noted
2000
1600
1200
800
400
0
0.10
0.08
0.06
C
iss
V
GS
= 2.5 V
0.04
0.02
0.00
V
GS
= 4.5 V
C
oss
C
rss
0
4
8
12
16
20
0
8
16
24
32
40
V
DS
– Drain-to-Source Voltage (V)
I
D
– Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
1.6
1.4
1.2
1.0
0.8
0.6
5
V = 4.5 V
GS
D
V
D
= 10 V
DS
= 6.5 A
I = 6.5 A
I
4
3
2
1
0
- 50 - 25
0
25
50
75
100 125 150
0
2
4
6
8
10
12
14
16
T – Junction Temperature (°C)
J
Q
– Total Gate Charge (nC)
g
Gate Charge
On-Resistance vs. Junction Temperature
0.10
0.08
0.06
0.04
0.02
0.00
40
T
= 150 °C
J
I
D
= 2 A
10
I
= 6.5 A
D
T
= 25 °C
J
1
0.0
0.3
V
0.6
0.9
1.2
1.5
0
1
2
3
4
5
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
SD
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 72753
S09-0704-Rev. B, 27-Apr-09
www.vishay.com
3
Si4963BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C unless otherwise noted
0.5
30
25
0.4
0.3
20
I
D
= 250 µA
0.2
0.1
15
10
0.0
5
- 0.1
- 0.2
0
- 50 - 25
0
25
50
75
100 125 150
-2
-1
10
10
1
10
Time (s)
100
600
T
– Temperature (°C)
J
Single Pulse Power
Threshold Voltage
100
Limited by R
*
I
Limited
DM
DS(on)
P(t) = 0.0001
P(t) = 0.001
10
1
P(t) = 0.01
P(t) = 0.1
I
D(on)
Limited
P(t) = 1
P(t) = 10
DC
T
= 25 °C
A
0.1
Single Pulse
BV
DSS
Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VDS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 91 °C/W
thJA
(t)
3. TJM - T = P
Z
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
10
-3
10
-2
10
-1
10
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 72753
S09-0704-Rev. B, 27-Apr-09
Si4963BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
10
-2
10
-1
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72753.
Document Number: 72753
S09-0704-Rev. B, 27-Apr-09
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Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
2
5
4
E
H
1
3
S
h x 45
D
C
0.25 mm (Gage Plane)
A
All Leads
0.101 mm
q
e
B
A
1
L
0.004"
MILLIMETERS
Max
INCHES
DIM
A
Min
Min
Max
1.35
0.10
0.35
0.19
4.80
3.80
1.75
0.20
0.51
0.25
5.00
4.00
0.053
0.004
0.014
0.0075
0.189
0.150
0.069
0.008
0.020
0.010
0.196
0.157
A1
B
C
D
E
e
1.27 BSC
0.050 BSC
H
h
5.80
0.25
0.50
0°
6.20
0.50
0.93
8°
0.228
0.010
0.020
0°
0.244
0.020
0.037
8°
L
q
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
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1
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
(0.711)
0.022
0.050
(0.559)
(1.270)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
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22
Document Number: 72606
Revision: 21-Jan-08
Legal Disclaimer Notice
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Revision: 09-Jul-2021
Document Number: 91000
1
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