SI5509DC-T1-GE3 [VISHAY]
N-AND P-CHANNEL 20-V (D-S) MOSFET - Tape and Reel;
| 型号： | SI5509DC-T1-GE3 |
| 厂家： | 
VISHAY |
| 描述： | N-AND P-CHANNEL 20-V (D-S) MOSFET - Tape and Reel 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总12页 (文件大小：162K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si5509DC
Vishay Siliconix
N- and P-Channel 20 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
VDS (V)
RDS(on) (Ω)
ID (A)a Qg (Typ.)
Definition
TrenchFET® Power MOSFETs
Compliant to RoHS Directive 2002/95/EC
6.1a
4.8a
0.052 at VGS = 4.5 V
0.084 at VGS = 2.5 V
0.090 at VGS = - 4.5 V
0.160 at VGS = - 2.5 V
•
•
N-Channel
P-Channel
20
3.9 nC
- 4.8a
- 3.6a
- 20
3.8 nC
APPLICATIONS
•
Complementary MOSFET for Portable Devices
- Ideal for Buck-Boost Circuits
1206-8 ChipFET®
1
D
1
S
2
S
1
D
1
G
1
Marking Code
ED XXX
D
1
S
2
G
2
G
D
2
G
2
1
Lot Traceability
and Date Code
D
2
Part # Code
S
D
2
Bottom View
Ordering Information: Si5509DC-T1-E3 (Lead (Pb)-free)
Si5509DC-T1-GE3 (Lead (Pb)-free and Halogen-free)
1
N-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
N-Channel
P-Channel
Unit
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
20
- 20
V
12
6.1a
4.9a
5.0b, c
3.9b, c
10
- 4.8a
- 3.8a
- 3.9b, c
- 3.1b, c
- 15
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
Continuous Drain Current (TJ = 150 °C)
A
IDM
IS
Pulsed Drain Current
T
C = 25 °C
A = 25 °C
3.7
- 3.7
Source Drain Current Diode Current
1.7b, c
4.5
- 1.7b, c
4.5
T
TC = 25 °C
T
C = 70 °C
A = 25 °C
2.88
2.88
PD
Maximum Power Dissipation
W
2.1b, c
1.33b, c
2.1b, c
1.33b, c
T
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
N-Channel
Typ. Max.
P-Channel
Typ. Max.
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Foot (Drain)
Symbol
RthJA
RthJF
Unit
t ≤ 5 s
50
30
60
40
50
30
60
40
°C/W
Steady State
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result
of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequade bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 90 °C/W for both channels.
Document Number: 73629
S10-0547-Rev. B, 08-Mar-10
www.vishay.com
1
Si5509DC
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.a Max.
Unit
Static
VGS = 0 V, ID = 250 µA
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
20
VDS
Drain-Source Breakdown Voltage
V
VGS = 0 V, ID = - 250 µA
- 20
ID = 250 µA
18.4
- 15.1
- 3.4
2.2
V
DS Temperature Coefficient
ΔVDS/TJ
ΔVGS(th)/TJ
ID = - 250 µA
mV/°C
ID = 250 µA
VGS(th) Temperature Coefficient
I
D = - 250 µA
VDS = VGS, ID = 250 µA
DS = VGS, ID = - 250 µA
0.7
2
VGS(th)
Gate Threshold Voltage
Gate-Body Leakage
V
V
P-Ch
N-Ch
P-Ch
N-Ch
- 0.7
- 2
100
- 100
1
IGSS
VDS = 0 V, VGS
=
12 V
nA
VDS = 20 V, VGS = 0 V
V
DS = - 20 V, VGS = 0 V
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
- 1
10
IDSS
ID(on)
RDS(on)
gfs
Zero Gate Voltage Drain Current
On-State Drain Currentb
µA
A
V
DS = 20 V, VGS = 0 V, TJ = 55 °C
V
DS = - 20 V, VGS = 0 V, TJ = 55 °C
VDS ≤ 5 V, VGS = 4.5 V
- 10
10
VDS ≤ - 5 V, VGS = - 4.5 V
VGS = 4.5 V, ID = 5.0 A
- 15
0.043 0.052
0.074 0.090
0.068 0.084
0.128 0.160
10.4
V
GS = - 4.5 V, ID = - 3.9 A
GS = 2.5 V, ID = 3.9 A
GS = - 2.5 V, ID = - 2.9 A
VDS = 10 V, ID = 5.0 A
Drain-Source On-State Resistanceb
Ω
S
V
V
Forward Transconductanceb
V
DS = - 10 V, ID = - 3.9 A
8.2
Dynamica
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
455
300
85
Ciss
Coss
Crss
Input Capacitance
N-Channel
DS = 10 V, VGS = 0 V, f = 1 MHz
V
Output Capacitance
pF
95
P-Channel
DS = - 10 V, VGS = 0 V, f = 1 MHz
50
V
Reverse Transfer Capacitance
65
VDS = 10 V, VGS = 5 V, ID = 4.0 A
DS = - 10 V, VGS = - 5 V, ID = - 3.9 A
4.4
6.6
V
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
4.1
3.8
3.9
0.9
0.7
0.95
1.25
1.9
8
6.2
5.7
5.9
Qg
Total Gate Charge
N-Channel
DS = 10 V, VGS = 4.5 V, ID = 4.0 A
nC
V
Qgs
Qgd
Rg
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
P-Channel
V
DS = - 10 V, VGS = - 4.5 V, ID = - 3.9 A
f = 1 MHz
Ω
www.vishay.com
2
Document Number: 73629
S10-0547-Rev. B, 08-Mar-10
Si5509DC
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.a Max.
Unit
Dynamica
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
6
9
12
143
113
18
38
9
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
N-Channel
DD = 10 V, RL = 2.5 Ω
ID ≅ 4.0 A, VGEN = 4.5 V, Rg = 1 Ω
8
V
95
75
12
25
6
ns
P-Channel
DD = - 10 V, RL = 3.2 Ω
ID ≅ - 3.14 A, VGEN = - 4.5 V, Rg = 1 Ω
Turn-Off Delay Time
V
Fall Time
60
90
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
3.75
- 3.75
10
IS
TC = 25 °C
A
V
Pulse Diode Forward Currenta
Body Diode Voltage
ISM
- 15
1.2
IS = 2.4 A, VGS = 0 V
0.8
VSD
I
S = - 1.5 A, VGS = 0 V
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
- 0.8
12
18
5
- 1.2
18
27
8
trr
Qrr
ta
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
ns
N-Channel
IF = 2.4 A, dI/dt = 100 A/µs, TJ = 25 °C
nC
8
12
7.5
14
4.5
4
P-Channel
IF = - 1.5 A, dI/dt = - 100 A/µs, TJ = 25 °C
ns
tb
Reverse Recovery Rise Time
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 73629
S10-0547-Rev. B, 08-Mar-10
www.vishay.com
3
Si5509DC
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
15
12
9
5
4
3
2
1
0
VGS = 5 V thru 3.5 V
VGS = 3 V
VGS = 2.5 V
TC = 25 °C
6
TC = 125 °C
3
VGS = 2 V
VGS = 1.5 V
1.5
TC = - 55 °C
2.0 2.5
0
0
0.5
1.0
2.0
2.5
0
0.5
1.0
1.5
3.0
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.20
0.15
0.10
0.05
0.00
600
500
400
300
200
100
0
Ciss
VGS = 2.5 V
VGS = 4.5 V
Coss
Crss
0
3
6
9
15
15
0
4
8
12
16
20
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
5
1.6
1.4
1.2
1.0
0.8
0.6
ID = 4 A
VGS = 4.5 V
ID = 5 A
4
VDS = 10 V
VGS = 2.5 V
ID = 3.9 A
3
VDS = 16 V
2
1
0
0
1
2
3
4
5
- 50 - 25
0
25
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
50
75
100 125 150
Qg - Total Gate Charge
Gate Charge
www.vishay.com
4
Document Number: 73629
S10-0547-Rev. B, 08-Mar-10
Si5509DC
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
10
1
0.20
0.15
0.10
0.05
0.00
ID = 5 A
TA = 150 °C
TA = 125 °C
TA = 25 °C
TA = 25 °C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1
2
3
4
5
VSD - Source-to-Drain Voltage (V)
V
- Gate-to-Source Voltage (V)
GS
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
1.5
1.3
1.1
0.9
0.7
0.5
50
40
30
20
10
0
ID = 250 μA
10-4
10-3
10-2
10-1
1
10
100 600
- 50 - 25
0
25
50
75
100 125 150
TJ - Junction Temperature (°C)
Time (s)
Single Pulse Power
Threshold Voltage
100
10
Limited by R
*
DS(on)
10 ms
100 ms
1
1 s
10 s
0.1
DC
T
= 25 °C
0.01
A
Single Pulse
BVDSS
Limited
0.001
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Case
Document Number: 73629
S10-0547-Rev. B, 08-Mar-10
www.vishay.com
5
Si5509DC
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
7
6
5
4
3
2
1
0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
Package Limited
0
25
50
75
100
125
150
0
25
50
75
100
125
150
TC - Case Temperature (°C)
TC - Case Temperature (°C)
Current Derating*
Power Derating
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
6
Document Number: 73629
S10-0547-Rev. B, 08-Mar-10
Si5509DC
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
Notes:
PDM
0.1
0.1
0.05
t1
t2
t1
t2
1. Duty Cycle, D =
0.02
2. Per Unit Base = RthJA = 90 °C/W
(t)
3. TJM - TA = PDMZthJA
Single Pulse
4. Surface Mounted
100
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
600
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Document Number: 73629
S10-0547-Rev. B, 08-Mar-10
www.vishay.com
7
Si5509DC
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
8
5
4
3
2
1
0
VGS = 5 V thru 3 V
VGS = 2.5 V
6
TC = 25 °C
4
VGS = 2 V
2
TC = 125 °C
1.0
VGS = 1.5 V
2.4
TC = - 55 °C
1.5 2.0
0
0
0.6
1.2
1.8
3.0
0
0.5
2.5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.20
0.15
0.10
0.05
0.00
600
500
400
300
200
100
0
VGS = 2.5 V
Ciss
VGS = 4.5 V
Coss
Crss
0
2
4
6
8
10
0
4
8
12
16
20
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
5
1.6
1.4
1.2
1.0
0.8
0.6
ID = 3.9 A
4
VGS = 4.5 V, ID = 5 A
VGS = 2.5 V, ID = 3.9 A
VDS = 10 V
VDS = 16 V
3
2
1
0
0
1
2
3
4
5
- 50 - 25
0
25
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
50
75
100 125 150
Qg - Total Gate Charge
Gate Charge
www.vishay.com
8
Document Number: 73629
S10-0547-Rev. B, 08-Mar-10
Si5509DC
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.3
0.2
0.1
0
ID = 3.9 A
10
TA = 125 °C
1
TA = 125 °C
0.1
TA = 25 °C
TA = 25 °C
0.01
0.001
0.0
0.4
0.8
1.2
1
2
3
4
5
VSD - Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
1.2
1.1
1.0
0.9
0.8
0.7
0.6
50
40
30
20
10
0
ID = 250 μA
10-4
10-3
10-2
10-1
1
10
100 600
- 50 - 25
0
25
50
75
100 125 150
TJ - Junction Temperature (°C)
Time (s)
Single Pulse Power
Threshold Voltage
100
Limited by RDS(on)
*
10
10 ms
100 ms
1
1 s
10 s
0.1
0.01
DC
BVDSS Limited
10
TA = 25 °C
Single Pulse
0.001
0.1
1
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Case
Document Number: 73629
S10-0547-Rev. B, 08-Mar-10
www.vishay.com
9
Si5509DC
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
6
5
4
3
2
1
0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
Package Limited
0
25
50
75
100
125
150
0
25
50
75
100
125
150
TC - Case Temperature (°C)
TC - Case Temperature (°C)
Current Derating*
Power Derating
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
10
Document Number: 73629
S10-0547-Rev. B, 08-Mar-10
Si5509DC
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
Notes:
PDM
0.1
0.1
0.05
t1
t2
t1
t2
1. Duty Cycle, D =
0.02
2. Per Unit Base = RthJA = 90 °C/W
(t)
3. TJM - TA = PDMZthJA
Single Pulse
4. Surface Mounted
100
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
600
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73629.
Document Number: 73629
S10-0547-Rev. B, 08-Mar-10
www.vishay.com
11
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
相关型号：
SI5511DC-T1-GE3
Small Signal Field-Effect Transistor, 3.9A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, 1206-8, CHIPFET-8
VISHAY
SI5513DC-T1-GE3
TRANSISTOR 3100 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, 1206-8, CHIPFET-8, FET General Purpose Small Signal
VISHAY
©2020 ICPDF网 联系我们和版权申明