SI5915DC [VISHAY]
Dual P-Channel 1.8-V (G-S) MOSFET; 双P沟道1.8 -V （G -S ）的MOSFET
| 型号： | SI5915DC |
| 厂家： | 
VISHAY |
| 描述： | Dual P-Channel 1.8-V (G-S) MOSFET |
| 文件： | 总4页 (文件大小：101K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si5915DC
Vishay Siliconix
Dual P-Channel 1.8-V (G-S) MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFET
V
(V)
r
(Ω)
I (A)
D
DS
DS(on)
D Low Thermal Resistance
D 40% Smaller Footprint Than TSOP-6
0.070 @ V = --4.5 V
-- 4 . 6
GS
APPLICATIONS
-- 8
0.108 @ V = --2.5 V
-- 3 . 7
-- 3 . 0
GS
D Load Switch or PA Switch for Portable
0.162 @ V = --1.8 V
GS
Devices
S
1
S
2
1206-8 ChipFETt
1
S
1
G
G
2
1
D
1
G
1
D
1
S
2
Marking Code
DE XX
D
2
G
2
D
2
Lot Traceability
and Date Code
D
D
2
1
Part # Code
Bottom View
P-Channel MOSFET
P-Channel MOSFET
Ordering Information: Si5915DC-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
-- 8
DS
V
V
GS
8
T
= 25_C
= 85_C
-- 3 . 4
-- 2 . 5
-- 4 . 6
-- 3 . 3
A
a
Continuous Drain Current (T = 150_C)
I
D
J
T
A
A
Pulsed Drain Current
I
-- 1 0
DM
a
Continuous Source Current (Diode Conduction)
I
-- 1 . 8
2.1
-- 0 . 9
1.1
S
T
= 25_C
= 85_C
A
a
Maximum Power Dissipation
P
W
D
T
A
1.1
0.6
Operating Junction and Storage Temperature Range
T , T
--55 to 150
260
J
stg
_C
b, c
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t ≤ 5 sec
Steady State
Steady State
50
90
30
60
110
40
a
Maximum Junction-to-Ambient
R
R
thJA
thJF
_C/W
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercon-
nection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 70693
S-21251—Rev. B, 05-Aug-02
www.vishay.com
2-1
Si5915DC
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
V
= V , I = --250 mA
--0.45
V
GS(th)
DS
GS D
I
V
= 0 V, V = 8 V
100
nA
GSS
DS
GS
= --6.4 V, V = 0 V
-- 1
-- 5
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= --6.4 V, V = 0 V, T = 85_C
GS J
a
On-State Drain Current
I
V
DS
-- 5 V, V = --4.5 V
-- 1 0
A
D(on)
GS
V
= --4.5 V, I = --3.4 A
D
0.058
0.090
0.131
0.070
0.108
0.162
GS
a
V
= --2.5 V, I = --2.7 A
D
Drain-Source On-State Resistance
r
Ω
GS
DS(on)
V
= --1.8 V, I = --1 A
D
GS
a
Forward Transconductance
g
8
S
V
V
= --5 V, I = --3.4 A
D
fs
DS
a
Diode Forward Voltage
V
SD
I
S
= --0.9 A, V = 0 V
-- 0 . 8
-- 1 . 2
9
GS
b
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q
5.9
1.3
1.4
20
70
35
35
30
g
Q
Q
V
= --4 V, V = --4.5 V, I = --3.4 A
nC
ns
gs
gd
DS
GS
D
t
30
110
55
d(on)
t
r
V
= --4 V, R = 4 Ω
L
GEN G
DD
I
≅ -- 1 A , V
= --4.5 V, R = 6 Ω
D
Turn-Off Delay Time
Fall Time
t
d(off)
t
55
f
Source-Drain Reverse Recovery Time
t
rr
I
F
= --0.9 A, di/dt = 100 A/ms
60
Notes
a. Pulse test; pulse width ≤ 300 ms, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
= --55_C
10
10
8
T
C
V
GS
= 5 thru 2.5 V
25_C
8
6
4
2
0
2 V
125_C
6
4
1.5 V
2
0
0
1
2
3
4
5
0.0
0.5
1.0
1.5
2.0
2.5
V
DS
-- Drain-to-Source Voltage (V)
V
GS
-- Gate-to-Source Voltage (V)
Document Number: 70693
S-21251—Rev. B, 05-Aug-02
www.vishay.com
2-2
Si5915DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.25
1000
800
600
400
200
0
V
GS
= 1.8 V
0.20
0.15
0.10
0.05
0.00
C
iss
V
GS
= 2.5 V
C
oss
V
GS
= 4.5 V
C
rss
0
2
4
6
8
10
0
2
4
6
8
I
D
-- Drain Current (A)
V
DS
-- Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
5
4
3
2
1
0
1.4
1.3
1.2
1.1
1.0
0.9
0.8
V
D
= 4 V
V
GS
= 4.5 V
DS
I
= 3.4 A
I = 3.4 A
D
0
1
2
g
3
4
5
6
7
--50 --25
0
25
50
75
100 125 150
Q
-- Total Gate Charge (nC)
T
-- Junction Temperature (_C)
J
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.25
0.20
0.15
0.10
0.05
0.00
10
I
D
= 1 A
T
= 150_C
J
I
D
= 3.4 A
T
= 25_C
J
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
1
2
3
4
5
V
SD
-- Source-to-Drain Voltage (V)
V
GS
-- Gate-to-Source Voltage (V)
Document Number: 70693
S-21251—Rev. B, 05-Aug-02
www.vishay.com
2-3
Si5915DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.3
50
40
30
0.2
I
D
= 250 mA
0.1
0.0
20
10
0
-- 0 . 1
-- 0 . 2
-- 4
-- 3
-- 2
-- 1
--50 --25
0
25
50
75
100 125 150
10
10
10
10
1
10
100 600
T
-- Temperature (_C)
Time (sec)
J
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
1. Duty Cycle, D =
2. Per Unit Base = R
2
thJA
= 90_C/W
(t)
3. T -- T = P
JM
Z
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-- 4
-- 3
-- 2
-- 1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-- 4
-- 3
-- 2
-- 1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 70693
S-21251—Rev. B, 05-Aug-02
www.vishay.com
2-4
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