SI6459BDQ [VISHAY]
P-Channel 60-V (D-S) MOSFET; P通道60 -V （D -S ）的MOSFET
| 型号： | SI6459BDQ |
| 厂家： | 
VISHAY |
| 描述： | P-Channel 60-V (D-S) MOSFET |
| 文件： | 总5页 (文件大小：72K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si6459BDQ
Vishay Siliconix
New Product
P-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
VDS (V)
rDS(on) (W)
ID (A)
D TrenchFETr Power MOSFET
0.115 @ V = −10 V
−2.7
−2.4
GS
−60
0.150 @ V = −4.5 V
GS
S*
TSSOP-8
G
D
D
S
S
D
1
2
3
4
8
7
6
5
D
* Source Pins 2, 3, 6 and 7
must be tied common.
S
S
G
Top View
Ordering Information: Si6459BDQ-T1
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
−60
DS
V
V
GS
"20
T
= 25_C
= 70_C
−2.7
−2.2
−2.2
−1.8
A
a
Continuous Drain Current (T = 150_C)
I
D
J
T
A
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)
Avalanche Current
I
−20
A
DM
a
I
S
−1.25
−0.83
I
AS
15
11
L = 0.1 mH
Single Pulse Avalanche Energy
E
AS
mJ
T
= 25_C
= 70_C
1.50
1.0
1.0
A
a
Maximum Power Dissipation
P
W
D
T
A
0.67
Operating Junction and Storage Temperature Range
T , T
J
−55 to 150
_C
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
66
100
50
83
120
60
a
Maximum Junction-to-Ambient
R
thJA
R
thJF
_C/W
Maximum Junction-to-Foot
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72518
S-32220—Rev. A, 03-Nov-03
www.vishay.com
1
Si6459BDQ
Vishay Siliconix
New Product
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = −250 mA
−1
−3
V
GS(th)
DS
GS
D
V
DS
= 0 V, V = "20 V
GS
I
"100
nA
GSS
V
= −60 V, V = 0 V
−1
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= −60 V, V = 0 V, T = 70_C
−10
GS
J
a
On-State Drain Current
I
V
DS
= −5 V, V = −10 V
−20
A
D(on)
GS
V
= −10 V, I = −2.7 A
0.092
0.120
0.115
0.150
GS
D
a
Drain-Source On-State Resistance
r
W
DS(on)
V
GS
= −4.5 V, I = −2.4 A
D
a
Forward Transconductance
g
V
= −15 V, I = −2.7 A
8
S
V
fs
DS
D
a
Diode Forward Voltage
V
SD
I
S
= −1.25 A, V = 0 V
−0.8
−1.2
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Q
14.5
2.2
3.7
14
22
g
Q
Q
V
= −30 V, V = −10 V, I = −2.7 A
nC
gs
gd
DS
GS
D
R
g
W
t
10
15
22
75
55
50
d(on)
t
r
15
V
= −30 V, R = 30 W
L
GEN G
DD
I
D
^ −1 A, V
= −10 V, R = 6 W
Turn-Off Delay Time
Fall Time
t
50
ns
d(off)
t
f
35
Source-Drain Reverse Recovery Time
t
rr
I
F
= −1.25 A, di/dt = 100 A/ms
30
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
20
20
16
12
8
V
GS
= 10 thru 5 V
16
12
8
4 V
T
= 125_C
C
4
4
25_C
3 V
−55_C
0
0
0
1
2
3
4
5
0
1
2
3
4
5
V
DS
− Drain-to-Source Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Document Number: 72518
S-32220—Rev. A, 03-Nov-03
www.vishay.com
2
Si6459BDQ
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.30
1000
800
600
400
200
0
0.25
0.20
C
iss
V
= 4.5 V
GS
0.15
0.10
0.05
0.00
V
GS
= 10 V
C
oss
C
rss
0
4
8
12
16
20
0
10
20
30
40
50
60
I
D
− Drain Current (A)
V
DS
− Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
8
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
D
= 30 V
V
= 10 V
DS
GS
I
= 2.7 A
I = 2.7 A
D
6
4
2
0
0
3
6
9
12
15
−50 −25
0
25
50
75
100 125 150
Q
− Total Gate Charge (nC)
T
− Junction Temperature (_C)
g
J
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.30
0.25
0.20
0.15
0.10
0.05
0.00
20
10
T
= 150_C
J
I
D
= 2.7 A
T
= 25_C
J
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
− Source-to-Drain Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Document Number: 72518
S-32220—Rev. A, 03-Nov-03
www.vishay.com
3
Si6459BDQ
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
50
40
0.6
0.4
I
D
= 250 mA
30
0.2
0.0
20
10
−0.2
−0.4
0
−3
−2
−1
−50 −25
0
25
50
75
100 125 150
10
10
10
1
10
100
600
T
− Temperature (_C)
Time (sec)
J
Safe Operating Area, Junction-to-Case
100
10
1
I
Limited
DM
Limited
by r
DS(on)
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
I
D(on)
Limited
P(t) = 0.1
0.1
T
= 25_C
A
Single Pulse
P(t) = 1
P(t) = 10
dc
BV
DSS
Limited
0.01
0.1
1
10
100
V
DS
− Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R
= 100_C/W
thJA
(t)
3. T − T = P
Z
Single Pulse
JM
A
DM thJA
4. Surface Mounted
0.01
−4
−3
−2
−1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 72518
S-32220—Rev. A, 03-Nov-03
www.vishay.com
4
Si6459BDQ
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
−4
−3
−2
−1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 72518
S-32220—Rev. A, 03-Nov-03
www.vishay.com
5
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