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SI6469DQ-T1 [VISHAY]

Power Field-Effect Transistor, 6A I(D), 8V, 0.031ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8;
SI6469DQ-T1
型号： SI6469DQ-T1
厂家： VISHAY    VISHAY
描述：

Power Field-Effect Transistor, 6A I(D), 8V, 0.031ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8
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Si6469DQ  
Vishay Siliconix  
P-Channel 1.8-V (G-S) MOSFET  
PRODUCT SUMMARY  
VDS (V)  
rDS(on) (W)  
ID (A)  
0.028 @ V = –4.5 V  
"6.0  
"5.8  
"5.0  
"3.6  
GS  
0.031 @ V = –3.3 V  
GS  
–8  
0.040 @ V = –2.5 V  
GS  
0.065 @ V = –1.8 V  
GS  
S
TSSOP-8  
D
S
S
G
D
S
S
D
G
1
2
3
4
8
7
6
5
D
Si6469DQ  
Top View  
D
ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
Limit  
–8  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
DS  
GS  
V
V
"8  
T
= 25_C  
= 70_C  
"6.0  
"5.0  
"30  
A
a, b  
Continuous Drain Current (T = 150_C)  
I
J
D
T
A
A
Pulsed Drain Current  
I
DM  
a, b  
Continuous Source Current (Diode Conduction)  
I
–1.25  
1.5  
S
T
= 25_C  
= 70_C  
A
a, b  
Maximum Power Dissipation  
P
W
D
T
A
1.0  
Operating Junction and Storage Temperature Range  
T , T  
–55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
83  
a
Maximum Junction-to-Ambient  
R
thJA  
_C/W  
Steady State  
95  
Notes  
a. Surface Mounted on FR4 Board.  
b. t v 10 sec.  
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm  
Document Number: 70858  
S-60717—Rev. A, 01-Feb-99  
www.vishay.com S FaxBack 408-970-5600  
2-1  
Si6469DQ  
Vishay Siliconix  
SPECIFICATIONS (T = _2C5 UNLESS OTHERWISE NOTED)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typb  
Max  
Unit  
Static  
Gate Threshold Voltage  
Gate-Body Leakage  
V
V
= V , I = –250 mA  
–0.45  
V
GS(th)  
DS  
GS  
D
V
= 0 V, V = "8 V  
GS  
I
"100  
nA  
DS  
DS  
GSS  
V
= –6.4 V, V = 0 V  
–1  
GS  
Zero Gate Voltage Drain Current  
I
mA  
DSS  
V
DS  
= –6.4 V, V = 0 V, T = 70_C  
–25  
GS  
J
a
On-State Drain Current  
I
V
DS  
w –8 V, V = –4.5 V  
–30  
A
D(on)  
GS  
V
= –4.5 V, I = –6.0 A  
0.021  
0.024  
0.028  
0.031  
GS  
GS  
GS  
GS  
D
V
= –3.3 V, I = –5.8 A  
D
a
Drain-Source On-State Resistance  
r
W
DS(on)  
0.030  
0.048  
0.040  
0.065  
V
V
= –2.5 V, I = –5.0 A  
D
= –1.8 V, I = –3.6 A  
D
a
Forward Transconductance  
g
V
= –8 V, I = –6.0 A  
18  
S
V
fs  
DS  
D
a
Diode Forward Voltage  
V
SD  
I
S
= –1.25 A, V = 0 V  
–0.68  
–1.1  
40  
GS  
Dynamicb  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Turn-On Delay Time  
Rise Time  
Q
20  
4.5  
3.6  
20  
30  
85  
50  
50  
g
Q
gs  
Q
gd  
V
= –6 V, V = –4.5 V, I = –6.0 A  
nC  
ns  
DS  
GS  
D
t
50  
60  
d(on)  
t
r
V
= –6 V, R = 6 W  
L
DD  
I
^ –1 A, V  
= –4.5 V, R = 6 W  
GEN G  
D
Turn-Off Delay Time  
Fall Time  
t
150  
90  
d(off)  
t
f
Source-Drain Reverse Recovery Time  
t
rr  
I
F
= –1.25 A, di/dt = 100 A/ms  
100  
Notes  
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.  
b. Guaranteed by design, not subject to production testing  
Document Number: 70858  
S-60717—Rev. A, 01-Feb-99  
www.vishay.com S FaxBack 408-970-5600  
2-2  
Si6469DQ  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)  
Output Characteristics  
Transfer Characteristics  
30  
24  
18  
12  
6
30  
24  
18  
12  
6
T
C
= –55_C  
V
GS  
= 5 thru 2,5 V  
2 V  
25_C  
125_C  
1.5 V  
1 V  
6
0
0
0
2
4
8
0
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
V
DS  
– Drain-to-Source Voltage (V)  
V
GS  
– Gate-to-Source Voltage (V)  
On-Resistance vs. Drain Current  
Capacitance  
0.10  
0.08  
0.06  
0.04  
0.02  
0
4000  
3200  
2400  
1600  
800  
C
iss  
V
GS  
= 1.8 V  
V
GS  
= 2.5 V  
C
oss  
V
GS  
= 4.5 V  
C
rss  
0
0
6
12  
18  
24  
30  
0
2
4
6
8
I
D
– Drain Current (A)  
V
DS  
– Drain-to-Source Voltage (V)  
Gate Charge  
On-Resistance vs. Junction Temperature  
4.5  
3.6  
2.7  
1.8  
0.9  
0
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
V
= 6 V  
= 6.0 A  
V
GS  
= 4.5 V  
DS  
I
D
I = 6.0 A  
D
0
4
8
12  
16  
20  
–50 –25  
0
25  
50  
75  
100 125 150  
Q
g
– Total Gate Charge (nC)  
T – Junction Temperature (_C)  
J
Document Number: 70858  
S-60717—Rev. A, 01-Feb-99  
www.vishay.com S FaxBack 408-970-5600  
2-3  
Si6469DQ  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)  
Source-Drain Diode Forward Voltage  
On-Resistance vs. Gate-to-Source Voltage  
0.06  
0.05  
0.04  
0.03  
0.02  
0.01  
0
30  
T = 150_C  
J
10  
I
D
= 6.0 A  
T = 25_C  
J
1
0
2
4
6
8
0.00  
0.2  
V
0.4  
0.6  
0.8  
1..0  
1.2  
– Source-to-Drain Voltage (V)  
V
– Gate-to-Source Voltage (V)  
SD  
GS  
Threshold Voltage  
Single Pulse Power  
0.8  
0.6  
30  
25  
I
D
= 250 mA  
0.4  
20  
15  
10  
5
0.2  
–0.0  
–0.2  
–0.4  
–0.6  
0
–50 –25  
0
25  
50  
75  
100 125 150  
0.01  
0.1  
1
10  
30  
T
J
– Temperature (_C)  
Time (sec)  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
Notes:  
P
DM  
0.1  
t
1
0.05  
t
2
t
t
1
1. Duty Cycle, D =  
2
2. Per Unit Base = R  
= 95_C/W  
thJA  
(t)  
Z
0.02  
3. T – T = P  
DM thJA  
JM  
A
4. Surface Mounted  
Single Pulse  
0.01  
–4  
–3  
–2  
–1  
10  
10  
10  
10  
1
10  
100  
600  
Square Wave Pulse Duration (sec)  
Document Number: 70858  
S-60717—Rev. A, 01-Feb-99  
www.vishay.com S FaxBack 408-970-5600  
2-4  
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

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