SI6911DQT-1 [VISHAY]
Dual P-Channel 12-V (D-S) MOSFET; 双P通道12 -V （D -S ）的MOSFET
| 型号： | SI6911DQT-1 |
| 厂家： | 
VISHAY |
| 描述： | Dual P-Channel 12-V (D-S) MOSFET |
| 文件： | 总5页 (文件大小：45K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si6911DQ
Vishay Siliconix
New Product
Dual P-Channel 12-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFETS
APPLICATIONS
VDS (V)
rDS(on) (W)
ID (A)
D Load Switch
0.026 @ V = -4.5 V
GS
-5.1
-4.5
-3.9
D Battery Switch
0.035 @ V = -2.5 V
GS
-12
0.046 @ V = -1.8 V
GS
S
S
1
2
TSSOP-8
G
1
G
2
D
1
D
1
8
2
2
2
D
S
S
S
S
1
1
1
2
3
4
7
6
5
G
G
2
Top View
Ordering Information: Si6911DQ T-1
D
1
D
2
P-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
-12
DS
GS
V
V
"8
T
= 25_C
= 70_C
-5.1
-4.1
-4.3
-3.5
A
a
Continuous Drain Current (T = 150__C)
I
J
D
T
A
A
Pulsed Drain Current (10 ms Pulse Width)
I
-30
DM
a
Continuous Source Current (Diode Conduction)
I
-1.0
1.14
0.73
-0.7
0.83
0.53
S
T
= 25_C
= 70_C
A
a
Maximum Power Dissipation
P
W
D
T
A
Operating Junction and Storage Temperature Range
T , T
-55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
86
124
59
110
150
75
a
Maximum Junction-to-Ambient
R
thJA
R
thJF
_C/W
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72231
S-31064—Rev. A, 26-May-03
www.vishay.com
1
Si6911DQ
New Product
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = -300 mA
-0.4
-0.9
V
GS(th)
DS
GS D
V
= 0 V, V = "8 V
GS
I
DS
"100
nA
GSS
V
= -9.6 V, V = 0 V
-1
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
= -9.6 V, V = 0 V, T = 70_C
-25
DS
GS
J
a
On-State Drain Current
I
V
= -5 V, V = -4.5 V
-20
A
D(on)
DS
GS
V
= -4.5 V, I = -5.1 A
0.021
0.028
0.026
0.035
GS
GS
GS
D
W
W
a
V
V
= -2.5 V, I = -4.5 A
D
Drain-Source On-State Resistance
r
DS(on)
0.037
0.046
= -1.8 V, I = -3.9 A
D
a
Forward Transconductance
g
V
= -5 V, I = -5.1 A
20
S
V
fs
DS
D
a
Diode Forward Voltage
V
I
S
= -1.0 A, V = 0 V
-0.65
-1.1
SD
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q
16
1.9
3.9
35
24
g
Q
gs
Q
gd
V
= -6 V, V = -4.5 V, I = -5.1 A
nC
ns
DS
GS
D
t
55
d(on)
t
r
62
100
180
110
100
V
= -6 V, R = 6 W
L
DD
I
^ -1 A, V = -4.5 V, R = 6 W
GEN G
D
Turn-Off Delay Time
Fall Time
t
120
70
d(off)
t
f
Source-Drain Reverse Recovery Time
t
rr
I
F
= -1.0 A, di/dt = 100 A/ms
65
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
30
30
24
18
12
6
T
C
= -55_C
V
= 5 thru 2.5 V
2 V
GS
25_C
24
18
12
6
125_C
1.5 V
0
0
0
1
2
3
4
5
0.0
0.5
1.0
1.5
2.0
2.5
V
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
DS
Document Number: 72231
S-31064—Rev. A, 26-May-03
www.vishay.com
2
Si6911DQ
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.10
2500
2000
1500
1000
500
0.08
0.06
C
iss
V
= 1.8 V
GS
0.04
0.02
0.00
V
V
= 2.5 V
GS
GS
C
oss
C
rss
= 4.5 V
24
0
0
6
12
18
30
0
2
4
6
8
10
12
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
6
5
4
3
2
1
0
1.6
1.4
1.2
1.0
0.8
0.6
V
= 6 V
= 5.1 A
V
= 4.5 V
GS
DS
I
D
I = 5.1 A
D
0
4
8
12
16
20
-50
-25
0
25
50
75
100 125 150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (_C)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.10
0.08
0.06
0.04
0.02
0.00
40
10
T = 150_C
J
I
D
= 5.1 A
T = 25_C
J
1
0.2
0.0
0.2
0.4
SD
0.6
0.8
1.0
1.2
1.4
1.6
0
2
4
6
8
V
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Document Number: 72231
S-31064—Rev. A, 26-May-03
www.vishay.com
3
Si6911DQ
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
200
160
0.4
0.3
0.2
I
D
= 300 mA
120
80
0.1
0.0
40
-0.1
-0.2
0
-50
-25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
T
J
- Temperature (_C)
Time (sec)
Safe Operating Area, Junction-to-Case
100
10
1
Limited
by r
1 ms
DS(on)
10 ms
100 ms
T
C
= 25_C
0.1
1 s
10 s
dc
Single Pulse
0.01
0.1
1
10
100
V
- Drain-to-Source Voltage (V)
DS
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 124_C/W
thJA
(t)
Z
3. T
- T = P
DM thJA
JM
A
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 72231
S-31064—Rev. A, 26-May-03
www.vishay.com
4
Si6911DQ
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 72231
S-31064—Rev. A, 26-May-03
www.vishay.com
5
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